ON Semiconductor MJD112-001
- Part Number:
- MJD112-001
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3069151-MJD112-001
- Description:
- TRANS NPN DARL 100V 2A IPAK
- ECAD Model:
-
- Datasheet:
- MJD112-001
ON Semiconductor MJD112-001 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJD112-001.
- Mounting TypeThrough Hole
- Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device PackageI-PAK
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Power - Max1.75W
- Transistor TypeNPN - Darlington
- DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 2A 3V
- Current - Collector Cutoff (Max)20μA
- Vce Saturation (Max) @ Ib, Ic3V @ 40mA, 4A
- Voltage - Collector Emitter Breakdown (Max)100V
- Current - Collector (Ic) (Max)2A
- Frequency - Transition25MHz
- RoHS StatusNon-RoHS Compliant
MJD112-001 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1000 @ 2A 3V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 100V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
MJD112-001 Features
the DC current gain for this device is 1000 @ 2A 3V
the vce saturation(Max) is 3V @ 40mA, 4A
the supplier device package of I-PAK
MJD112-001 Applications
There are a lot of Rochester Electronics, LLC
MJD112-001 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1000 @ 2A 3V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 100V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
MJD112-001 Features
the DC current gain for this device is 1000 @ 2A 3V
the vce saturation(Max) is 3V @ 40mA, 4A
the supplier device package of I-PAK
MJD112-001 Applications
There are a lot of Rochester Electronics, LLC
MJD112-001 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJD112-001 More Descriptions
Tube Through Hole NPN - Darlington Single Bipolar (BJT) Transistor 1000 @ 2A 3V 2A 1.75W 25MHz
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
2.0 A, 100 V NPN Darlington Bipolar Power Transistor
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
2.0 A, 100 V NPN Darlington Bipolar Power Transistor
The three parts on the right have similar specifications to MJD112-001.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Power - MaxTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionRoHS StatusVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Lifecycle StatusSurface MountNumber of PinsTransistor Element MaterialPublishedJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsPolarityElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentREACH SVHCLead FreeFactory Lead TimeMounthFE MinRadiation HardeningView Compare
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MJD112-001Through HoleTO-251-3 Short Leads, IPak, TO-251AAI-PAK-65°C~150°C TJTubeObsolete1 (Unlimited)1.75WNPN - Darlington1000 @ 2A 3V20μA3V @ 40mA, 4A100V2A25MHzNon-RoHS Compliant---------------------------------------------------------- -
----------------100V3V @ 40mA, 4APNP - DarlingtonD-Pak-20WTape & Reel (TR)TO-252-3, DPak (2 Leads Tab), SC-63150°C (TJ)Surface Mount25MHz1000 @ 2A, 3V20µA2A-------------------------------------------
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--65°C~150°C TJCut Tape (CT)Obsolete1 (Unlimited)-PNP - Darlington1000 @ 2A 3V20μA2V @ 8mA, 2A--25MHzNon-RoHS Compliant--------------OBSOLETE (Last Updated: 3 days ago)YES3SILICON2005e0no2EAR99Tin/Lead (Sn/Pb)Other Transistors-100V1.75WGULL WING240not_compliant-2A30MJD1173R-PSSO-G2Not Qualified1PNPSingle20WCOLLECTORSWITCHING100V2A100V25MHz2V100V100V5V2ANo SVHCLead Free----
-
Through HoleTO-251-3 Short Leads, IPak, TO-251AA-150°C TJBulkActive1 (Unlimited)-NPN - Darlington1000 @ 4A 4V10μA4V @ 80mA, 8A---ROHS3 Compliant-----------------SILICON-e3-3EAR99Tin (Sn)Other Transistors-20W-260--30MJD1223R-PSIP-T3-1NPNSingle20WCOLLECTORSWITCHING100V8A100V-2V100V100V5V--Lead Free8 WeeksThrough Hole100No
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