MJD122T4

ON Semiconductor MJD122T4

Part Number:
MJD122T4
Manufacturer:
ON Semiconductor
Ventron No:
3585463-MJD122T4
Description:
TRANS NPN DARL 100V 8A DPAK
ECAD Model:
Datasheet:
MJD122T4

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Specifications
ON Semiconductor MJD122T4 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJD122T4.
  • Voltage - Collector Emitter Breakdown (Max):
    100V
  • Vce Saturation (Max) @ Ib, Ic:
    4V @ 80mA, 8A
  • Transistor Type:
    NPN - Darlington
  • Supplier Device Package:
    DPAK-3
  • Series:
    -
  • Power - Max:
    1.75W
  • Packaging:
    Original-Reel®
  • Package / Case:
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Operating Temperature:
    -65°C ~ 150°C (TJ)
  • Mounting Type:
    Surface Mount
  • Frequency - Transition:
    4MHz
  • DC Current Gain (hFE) (Min) @ Ic, Vce:
    1000 @ 4A, 4V
  • Current - Collector Cutoff (Max):
    10µA
  • Current - Collector (Ic) (Max):
    8A
Description
We can supply AMI Semiconductor / ON Semiconductor MJD122T4, use the request quote form to request MJD122T4 pirce,  AMI Semiconductor / ON Semiconductor Datasheet PDF and lead time.ventronchip.com is a professional electronic components distributor. With 3 Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number MJD122T4.The price and lead time for MJD122T4 depending on the quantity required, availability and warehouse location.
MJD122T4 More Descriptions
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
MJD122 Series NPN 100 V 8 A Complementary Power Darlington Transistor - TO-252-3
TRANSISTOR, BJT, NPN, 100V, 8A, TO-252-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 20W; DC Collector Current: 5A; DC Current Gain hFE: 1000hFE; Trans
Darlington Transistor, Npn, 100V, To-252; Transistor Polarity:Npn; No. Of Pins:3Pins; Transistor Mounting:Surface Mount; Operating Temperature Max:150°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:100V Rohs Compliant: Yes |Stmicroelectronics MJD122T4
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) A = 8 / Collector-Emitter Voltage (Vceo) V = 100 / DC Current Gain (hFE) = 100 / Collector-Base Voltage (Vcbo) V = 100 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Power Dissipation (Pd) W = 20 / Package Type = DPAK / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 4 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 4.5
Product Comparison
The three parts on the right have similar specifications to MJD122T4.
  • Image
    Part Number
    Manufacturer
    Voltage - Collector Emitter Breakdown (Max):
    Vce Saturation (Max) @ Ib, Ic:
    Transistor Type:
    Supplier Device Package:
    Series:
    Power - Max:
    Packaging:
    Package / Case:
    Operating Temperature:
    Mounting Type:
    Frequency - Transition:
    DC Current Gain (hFE) (Min) @ Ic, Vce:
    Current - Collector Cutoff (Max):
    Current - Collector (Ic) (Max):
    Mounting Type
    Package / Case
    Supplier Device Package
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    Power - Max
    Transistor Type
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Frequency - Transition
    RoHS Status
    Factory Lead Time
    Published
    JESD-609 Code
    Pbfree Code
    ECCN Code
    Terminal Finish
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Qualification Status
    Mount
    Transistor Element Material
    Number of Terminations
    Subcategory
    Max Power Dissipation
    JESD-30 Code
    Number of Elements
    Polarity
    Element Configuration
    Power Dissipation
    Case Connection
    Transistor Application
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Radiation Hardening
    Lead Free
    View Compare
  • MJD122T4
    MJD122T4
    100V
    4V @ 80mA, 8A
    NPN - Darlington
    DPAK-3
    -
    1.75W
    Original-Reel®
    TO-252-3, DPak (2 Leads Tab), SC-63
    -65°C ~ 150°C (TJ)
    Surface Mount
    4MHz
    1000 @ 4A, 4V
    10µA
    8A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MJD112-001
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    I-PAK
    -65°C~150°C TJ
    Tube
    Obsolete
    1 (Unlimited)
    1.75W
    NPN - Darlington
    1000 @ 2A 3V
    20μA
    3V @ 40mA, 4A
    100V
    2A
    25MHz
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MJD122-TP
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    150°C TJ
    Tape & Reel (TR)
    Active
    1 (Unlimited)
    1.5W
    NPN
    1000 @ 4A 4V
    10nA
    4V @ 80mA, 8A
    100V
    8A
    -
    ROHS3 Compliant
    12 Weeks
    2005
    e3
    yes
    EAR99
    Matte Tin (Sn)
    260
    10
    MJD122
    3
    Not Qualified
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MJD122-1
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    -
    150°C TJ
    Bulk
    Active
    1 (Unlimited)
    -
    NPN - Darlington
    1000 @ 4A 4V
    10μA
    4V @ 80mA, 8A
    -
    -
    -
    ROHS3 Compliant
    8 Weeks
    -
    e3
    -
    EAR99
    Tin (Sn)
    260
    30
    MJD122
    3
    -
    Through Hole
    SILICON
    3
    Other Transistors
    20W
    R-PSIP-T3
    1
    NPN
    Single
    20W
    COLLECTOR
    SWITCHING
    100V
    8A
    100V
    2V
    100V
    100V
    5V
    100
    No
    Lead Free
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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