IXYS IXYH30N170C

Name: IXYH30N170C
Brand: IXYS
SKU: 2854579-IXYH30N170C
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IXYH30N170C

Manufacturer:: IXYS

Ventron No:: 2854579-IXYH30N170C

Description:: 1700V/108A HIGH VOLTAGE XPT IGB

ECAD Model:

Datasheet:: IXYH30N170C

Specifications

IXYS IXYH30N170C technical specifications, attributes, parameters and parts with similar specifications to IXYS IXYH30N170C.

Factory Lead Time
28 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
XPT™
Published
2016
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
937W
Input Type
Standard
Power - Max
937W
Collector Emitter Voltage (VCEO)
3.7V
Max Collector Current
108A
Collector Emitter Breakdown Voltage
1.7kV
Voltage - Collector Emitter Breakdown (Max)
1700V
Test Condition
850V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
3.7V @ 15V, 30A
Gate Charge
140nC
Current - Collector Pulsed (Icm)
255A
Td (on/off) @ 25°C
28ns/150ns
Switching Energy
5.9mJ (on), 3.3mJ (off)
RoHS Status
ROHS3 Compliant

Description

IXYH30N170C Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXYH30N170C or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXYH30N170C. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

IXYH30N170C More Descriptions

IGBT 1700V 108A 937W Through Hole TO-247AD
1700V/108A HIGH VOLTAGE XPT IGB
IGBT, 1.7kV, 100A, TO-247AD
IGBT DISCRETE

Product Comparison

The three parts on the right have similar specifications to IXYH30N170C.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Max Power Dissipation

Input Type

Power - Max

Collector Emitter Voltage (VCEO)

Max Collector Current

Collector Emitter Breakdown Voltage

Voltage - Collector Emitter Breakdown (Max)

Test Condition

Vce(on) (Max) @ Vge, Ic

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

RoHS Status

Transistor Element Material

Number of Terminations

Additional Feature

Terminal Position

Pin Count

JESD-30 Code

Number of Elements

Configuration

Case Connection

Turn On Delay Time

Transistor Application

Polarity/Channel Type

Turn-Off Delay Time

JEDEC-95 Code

Turn On Time

Turn Off Time-Nom (toff)

Lead Free

Number of Pins

Subcategory

Element Configuration

Power Dissipation

Reverse Recovery Time

Collector Emitter Saturation Voltage

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

Height

Length

Width

View Compare
IXYH30N170C

IXYS

28 Weeks

Through Hole

Through Hole

TO-247-3

-55°C~175°C TJ

Tube

XPT™

2016

Active

1 (Unlimited)

937W

Standard

937W

3.7V

108A

1.7kV

1700V

850V, 30A, 10 Ω, 15V

3.7V @ 15V, 30A

140nC

255A

28ns/150ns

5.9mJ (on), 3.3mJ (off)

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IXYH40N120B3

IXYS

28 Weeks

Through Hole

Through Hole

TO-247-3

-55°C~175°C TJ

Tube

GenX3™, XPT™

2012

Active

1 (Unlimited)

577W

Standard

577W

2.9V

96A

1.2kV

1200V

600V, 40A, 10 Ω, 15V

2.9V @ 15V, 40A

87nC

200A

22ns/177ns

2.7mJ (on), 1.6mJ (off)

ROHS3 Compliant

SILICON

3

AVALANCHE RATED

SINGLE

3

R-PSFM-T3

1

SINGLE

COLLECTOR

22 ns

POWER CONTROL

N-CHANNEL

177 ns

TO-247AD

84 ns

411 ns

Lead Free

-

-

-

-

-

-

-

-

-

-

-

IXYH30N170C vs IXYH40N120B3
IXYH30N120C3D1

IXYS

28 Weeks

Through Hole

Through Hole

TO-247-3

-55°C~150°C TJ

Tube

GenX3™, XPT™

2012

Active

1 (Unlimited)

416W

Standard

-

1.2kV

66A

1.2kV

1200V

600V, 30A, 10 Ω, 15V

3.3V @ 15V, 30A

69nC

133A

19ns/130ns

2.6mJ (on), 1.1mJ (off)

ROHS3 Compliant

SILICON

3

-

-

-

-

1

-

COLLECTOR

23 ns

POWER CONTROL

N-CHANNEL

126 ns

TO-247AD

71 ns

296 ns

Lead Free

3

Insulated Gate BIP Transistors

Single

416W

195ns

3.7V

20V

5V

21.46mm

16.26mm

5.3mm

IXYH30N170C vs IXYH30N120C3D1
IXYH50N120C3D1

IXYS

28 Weeks

Through Hole

Through Hole

TO-247-3

-55°C~150°C TJ

Tube

GenX3™, XPT™

2013

Active

1 (Unlimited)

625W

Standard

-

1.2kV

90A

1.2kV

1200V

600V, 50A, 5 Ω, 15V

4V @ 15V, 50A

142nC

210A

28ns/133ns

3mJ (on), 1mJ (off)

ROHS3 Compliant

SILICON

3

AVALANCHE RATED

-

3

-

1

-

COLLECTOR

24 ns

POWER CONTROL

N-CHANNEL

240 ns

TO-247AD

82 ns

372 ns

Lead Free

3

Insulated Gate BIP Transistors

Single

625W

195ns

4.2V

20V

5V

21.46mm

16.26mm

5.3mm

IXYH30N170C vs IXYH50N120C3D1