IXYH50N65C3

IXYS IXYH50N65C3

Part Number:
IXYH50N65C3
Manufacturer:
IXYS
Ventron No:
3587292-IXYH50N65C3
Description:
IGBT 650V 130A 600W TO247
ECAD Model:
Datasheet:
IXYH50N65C3

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Specifications
IXYS IXYH50N65C3 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXYH50N65C3.
  • Factory Lead Time
    28 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Weight
    38.000013g
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    GenX3™, XPT™
  • Published
    2013
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Power Dissipation
    600W
  • Element Configuration
    Single
  • Input Type
    Standard
  • Power - Max
    600W
  • Collector Emitter Voltage (VCEO)
    2.1V
  • Max Collector Current
    130A
  • Collector Emitter Breakdown Voltage
    650V
  • Collector Emitter Saturation Voltage
    1.74V
  • Test Condition
    400V, 36A, 5 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.1V @ 15V, 36A
  • IGBT Type
    PT
  • Gate Charge
    80nC
  • Current - Collector Pulsed (Icm)
    250A
  • Td (on/off) @ 25°C
    22ns/80ns
  • Switching Energy
    1.3mJ (on), 370μJ (off)
  • RoHS Status
    ROHS3 Compliant
Description
IXYH50N65C3 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXYH50N65C3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXYH50N65C3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXYH50N65C3 More Descriptions
IGBT 650V 130A 600W TO247
OEMs, CMs ONLY (NO BROKERS)
Product Comparison
The three parts on the right have similar specifications to IXYH50N65C3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Weight
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Power Dissipation
    Element Configuration
    Input Type
    Power - Max
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    RoHS Status
    Number of Pins
    Transistor Element Material
    Number of Terminations
    Subcategory
    Number of Elements
    Power Dissipation
    Case Connection
    Turn On Delay Time
    Transistor Application
    Polarity/Channel Type
    Turn-Off Delay Time
    Reverse Recovery Time
    JEDEC-95 Code
    Voltage - Collector Emitter Breakdown (Max)
    Turn On Time
    Turn Off Time-Nom (toff)
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Height
    Length
    Width
    Lead Free
    Current - Collector (Ic) (Max)
    View Compare
  • IXYH50N65C3
    IXYH50N65C3
    28 Weeks
    Through Hole
    Through Hole
    TO-247-3
    38.000013g
    -55°C~175°C TJ
    Tube
    GenX3™, XPT™
    2013
    Active
    1 (Unlimited)
    600W
    Single
    Standard
    600W
    2.1V
    130A
    650V
    1.74V
    400V, 36A, 5 Ω, 15V
    2.1V @ 15V, 36A
    PT
    80nC
    250A
    22ns/80ns
    1.3mJ (on), 370μJ (off)
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXYH30N120C3D1
    28 Weeks
    Through Hole
    Through Hole
    TO-247-3
    -
    -55°C~150°C TJ
    Tube
    GenX3™, XPT™
    2012
    Active
    1 (Unlimited)
    416W
    Single
    Standard
    -
    1.2kV
    66A
    1.2kV
    3.7V
    600V, 30A, 10 Ω, 15V
    3.3V @ 15V, 30A
    -
    69nC
    133A
    19ns/130ns
    2.6mJ (on), 1.1mJ (off)
    ROHS3 Compliant
    3
    SILICON
    3
    Insulated Gate BIP Transistors
    1
    416W
    COLLECTOR
    23 ns
    POWER CONTROL
    N-CHANNEL
    126 ns
    195ns
    TO-247AD
    1200V
    71 ns
    296 ns
    20V
    5V
    21.46mm
    16.26mm
    5.3mm
    Lead Free
    -
  • IXYH40N90C3D1
    28 Weeks
    Through Hole
    Through Hole
    TO-247-3
    -
    -55°C~150°C TJ
    Tube
    GenX3™, XPT™
    2013
    Active
    1 (Unlimited)
    500W
    Single
    Standard
    -
    900V
    90A
    900V
    2.2V
    450V, 40A, 5 Ω, 15V
    2.5V @ 15V, 40A
    -
    74nC
    180A
    27ns/78ns
    1.9mJ (on), 1mJ (off)
    ROHS3 Compliant
    3
    SILICON
    3
    Insulated Gate BIP Transistors
    1
    500W
    COLLECTOR
    -
    POWER CONTROL
    N-CHANNEL
    -
    100ns
    TO-247AD
    -
    81 ns
    237 ns
    20V
    5.5V
    -
    -
    -
    Lead Free
    -
  • IXYH30N450HV
    24 Weeks
    -
    Through Hole
    TO-247-3 Variant
    -
    -55°C~150°C TJ
    Tube
    XPT™
    -
    Active
    1 (Unlimited)
    -
    -
    Standard
    430W
    -
    -
    -
    -
    960V, 30A, 10 Ω, 15V
    3.9V @ 15V, 30A
    PT
    88nC
    200A
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    4500V
    -
    -
    -
    -
    -
    -
    -
    -
    60A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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