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IRLMS6702TR

Infineon Technologies IRLMS6702TR

Part Number:
IRLMS6702TR
Manufacturer:
Infineon Technologies
Ventron No:
2853663-IRLMS6702TR
Description:
MOSFET P-CH 20V 2.4A 6-TSOP
ECAD Model:
Datasheet:
IRLMS6702

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Specifications
Infineon Technologies IRLMS6702TR technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLMS6702TR.
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-23-6
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Packaging
    Cut Tape (CT)
  • Series
    HEXFET®
  • Published
    2004
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PDSO-G6
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode
    ENHANCEMENT MODE
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    200m Ω @ 1.6A, 4.5V
  • Vgs(th) (Max) @ Id
    700mV @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    210pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    2.4A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    8.8nC @ 4.5V
  • Drain to Source Voltage (Vdss)
    20V
  • Drain Current-Max (Abs) (ID)
    2.3A
  • Drain-source On Resistance-Max
    0.2Ohm
  • Pulsed Drain Current-Max (IDM)
    13A
  • DS Breakdown Voltage-Min
    20V
  • RoHS Status
    Non-RoHS Compliant
Description
IRLMS6702TR Overview
A device's maximum input capacitance is 210pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 2.3A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 13A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 20V.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).

IRLMS6702TR Features
based on its rated peak drain current 13A.
a 20V drain to source voltage (Vdss)


IRLMS6702TR Applications
There are a lot of Infineon Technologies
IRLMS6702TR applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRLMS6702TR More Descriptions
MOSFET, P-CHANNEL, -20V, -2.3A, 200 mOhm, 5.8 nC Qg, Logic Level, TSOP-6
-20V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
Compliant Surface Mount Contains Lead Cut Tape 20 ns 200 mΩ LSOP -2.3 A
Power Field-Effect Transistor, 2.3A I(D), 20V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
French Electronic Distributor since 1988
Product Comparison
The three parts on the right have similar specifications to IRLMS6702TR.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    RoHS Status
    Factory Lead Time
    Mount
    Number of Pins
    Operating Temperature
    Resistance
    Additional Feature
    Subcategory
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    Radiation Hardening
    Lead Free
    Termination
    Voltage - Rated DC
    Current Rating
    Threshold Voltage
    Dual Supply Voltage
    Nominal Vgs
    REACH SVHC
    Operating Temperature (Max)
    JEDEC-95 Code
    Avalanche Energy Rating (Eas)
    Power Dissipation-Max (Abs)
    View Compare
  • IRLMS6702TR
    IRLMS6702TR
    Infineon Technologies
    Surface Mount
    SOT-23-6
    YES
    SILICON
    Cut Tape (CT)
    HEXFET®
    2004
    e3
    Obsolete
    1 (Unlimited)
    6
    EAR99
    Matte Tin (Sn)
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    R-PDSO-G6
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    P-Channel
    SWITCHING
    200m Ω @ 1.6A, 4.5V
    700mV @ 250μA
    210pF @ 15V
    2.4A Ta
    8.8nC @ 4.5V
    20V
    2.3A
    0.2Ohm
    13A
    20V
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLML2502GTRPBF
    IRLML2502GTRPBF
    Infineon Technologies
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    SILICON
    Tape & Reel (TR)
    HEXFET®
    2008
    e3
    Discontinued
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    -
    -
    -
    1
    -
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    45m Ω @ 4.2A, 4.5V
    1.2V @ 250μA
    740pF @ 15V
    4.2A Ta
    12nC @ 5V
    -
    -
    -
    -
    -
    ROHS3 Compliant
    10 Weeks
    Surface Mount
    3
    -55°C~150°C TJ
    45MOhm
    HIGH RELIABILITY
    FET General Purpose Power
    1.25W Ta
    Single
    1.25W
    7.5 ns
    10ns
    2.5V 4.5V
    ±12V
    26 ns
    54 ns
    4.2A
    12V
    20V
    1.016mm
    3.0226mm
    1.397mm
    No
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRLMS6702TR vs IRLML2502GTRPBF
  • IRLMS5703TRPBF
    IRLMS5703TRPBF
    Infineon Technologies
    Surface Mount
    SOT-23-6
    -
    SILICON
    Tape & Reel (TR)
    HEXFET®
    1997
    e3
    Not For New Designs
    1 (Unlimited)
    6
    EAR99
    Matte Tin (Sn)
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    -
    -
    -
    1
    -
    ENHANCEMENT MODE
    P-Channel
    SWITCHING
    180m Ω @ 1.6A, 10V
    1V @ 250μA
    170pF @ 25V
    2.4A Ta
    11nC @ 10V
    30V
    2.4A
    -
    -
    -
    ROHS3 Compliant
    7 Weeks
    Surface Mount
    6
    -55°C~150°C TJ
    180mOhm
    ULTRA LOW RESISTANCE
    -
    1.7W Ta
    Single
    1.7W
    10 ns
    12ns
    4.5V 10V
    ±20V
    8.4 ns
    20 ns
    -2.3A
    20V
    -30V
    1.4478mm
    2.9972mm
    1.75mm
    No
    Lead Free
    SMD/SMT
    -30V
    -2.3A
    -1V
    -30V
    -1 V
    No SVHC
    -
    -
    -
    -
    IRLMS6702TR vs IRLMS5703TRPBF
  • IRLML6402TR
    IRLML6402TR
    Infineon Technologies
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    Cut Tape (CT)
    HEXFET®
    2003
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    30
    R-PDSO-G3
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    P-Channel
    SWITCHING
    65m Ω @ 3.7A, 4.5V
    1.2V @ 250μA
    633pF @ 10V
    3.7A Ta
    12nC @ 5V
    20V
    3.7A
    0.065Ohm
    22A
    20V
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    HIGH RELIABILITY
    Other Transistors
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    150°C
    TO-236AB
    11 mJ
    1.3W
    IRLMS6702TR vs IRLML6402TR
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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