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IRLMS2002TR

Infineon Technologies IRLMS2002TR

Part Number:
IRLMS2002TR
Manufacturer:
Infineon Technologies
Ventron No:
3071550-IRLMS2002TR
Description:
MOSFET N-CH 20V 6.5A 6-TSOP
ECAD Model:
Datasheet:
IRLMS2002TR

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Specifications
Infineon Technologies IRLMS2002TR technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLMS2002TR.
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-23-6
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Packaging
    Cut Tape (CT)
  • Series
    HEXFET®
  • Published
    2003
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    ULTRA-LOW RESISTANCE
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PDSO-G6
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode
    ENHANCEMENT MODE
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    30m Ω @ 6.5A, 4.5V
  • Vgs(th) (Max) @ Id
    1.2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1310pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    6.5A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    22nC @ 5V
  • Drain to Source Voltage (Vdss)
    20V
  • Drain Current-Max (Abs) (ID)
    6.5A
  • Drain-source On Resistance-Max
    0.03Ohm
  • Pulsed Drain Current-Max (IDM)
    20A
  • DS Breakdown Voltage-Min
    20V
  • RoHS Status
    Non-RoHS Compliant
Description
IRLMS2002TR Overview
A device's maximum input capacitance is 1310pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 6.5A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 20A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 20V.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).

IRLMS2002TR Features
based on its rated peak drain current 20A.
a 20V drain to source voltage (Vdss)


IRLMS2002TR Applications
There are a lot of Infineon Technologies
IRLMS2002TR applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRLMS2002TR More Descriptions
20V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
Trans MOSFET N-CH Si 20V 6.5A 6-Pin TSOP T/R / Ultra Low On-Resistance | MOSFET N-CH 20V 6.5A 6-TSOP
Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:6.5A; On Resistance, Rds(on):30mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:Micro6 ;RoHS Compliant: No
Product Comparison
The three parts on the right have similar specifications to IRLMS2002TR.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    RoHS Status
    Factory Lead Time
    Mount
    Number of Pins
    Operating Temperature
    Resistance
    Subcategory
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Recovery Time
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Lead Free
    Termination
    Voltage - Rated DC
    Current Rating
    Dual Supply Voltage
    Operating Temperature (Max)
    View Compare
  • IRLMS2002TR
    IRLMS2002TR
    Infineon Technologies
    Surface Mount
    SOT-23-6
    YES
    SILICON
    Cut Tape (CT)
    HEXFET®
    2003
    e3
    Obsolete
    1 (Unlimited)
    6
    EAR99
    Matte Tin (Sn)
    ULTRA-LOW RESISTANCE
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    R-PDSO-G6
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    30m Ω @ 6.5A, 4.5V
    1.2V @ 250μA
    1310pF @ 15V
    6.5A Ta
    22nC @ 5V
    20V
    6.5A
    0.03Ohm
    20A
    20V
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLML2244TRPBF
    IRLML2244TRPBF
    Infineon Technologies
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    SILICON
    Tape & Reel (TR)
    HEXFET®
    2011
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    30
    -
    -
    1
    -
    ENHANCEMENT MODE
    P-Channel
    SWITCHING
    54m Ω @ 4.3A, 4.5V
    1.1V @ 10μA
    570pF @ 16V
    4.3A Ta
    6.9nC @ 4.5V
    20V
    -
    -
    -
    -
    ROHS3 Compliant
    12 Weeks
    Surface Mount
    3
    -55°C~150°C TJ
    95MOhm
    Other Transistors
    1.3W Ta
    Single
    1.3W
    7 ns
    12ns
    2.5V 4.5V
    ±12V
    25 ns
    34 ns
    4.3A
    -1.1V
    12V
    -20V
    32 ns
    -1.1 V
    1.02mm
    3.04mm
    1.4mm
    No SVHC
    No
    Lead Free
    -
    -
    -
    -
    -
    IRLMS2002TR vs IRLML2244TRPBF
  • IRLMS5703TRPBF
    IRLMS5703TRPBF
    Infineon Technologies
    Surface Mount
    SOT-23-6
    -
    SILICON
    Tape & Reel (TR)
    HEXFET®
    1997
    e3
    Not For New Designs
    1 (Unlimited)
    6
    EAR99
    Matte Tin (Sn)
    ULTRA LOW RESISTANCE
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    -
    -
    -
    1
    -
    ENHANCEMENT MODE
    P-Channel
    SWITCHING
    180m Ω @ 1.6A, 10V
    1V @ 250μA
    170pF @ 25V
    2.4A Ta
    11nC @ 10V
    30V
    2.4A
    -
    -
    -
    ROHS3 Compliant
    7 Weeks
    Surface Mount
    6
    -55°C~150°C TJ
    180mOhm
    -
    1.7W Ta
    Single
    1.7W
    10 ns
    12ns
    4.5V 10V
    ±20V
    8.4 ns
    20 ns
    -2.3A
    -1V
    20V
    -30V
    -
    -1 V
    1.4478mm
    2.9972mm
    1.75mm
    No SVHC
    No
    Lead Free
    SMD/SMT
    -30V
    -2.3A
    -30V
    -
    IRLMS2002TR vs IRLMS5703TRPBF
  • IRLML5203
    IRLML5203
    Infineon Technologies
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    Tube
    HEXFET®
    2003
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    R-PDSO-G3
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    P-Channel
    SWITCHING
    98m Ω @ 3A, 10V
    2.5V @ 250μA
    510pF @ 25V
    3A Ta
    14nC @ 10V
    30V
    3A
    0.098Ohm
    24A
    30V
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    Other Transistors
    1.25W Ta
    -
    -
    -
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    150°C
    IRLMS2002TR vs IRLML5203
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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