IRLML9301TRPBF

Infineon Technologies IRLML9301TRPBF

Part Number:
IRLML9301TRPBF
Manufacturer:
Infineon Technologies
Ventron No:
2848765-IRLML9301TRPBF
Description:
MOSFET P-CH 30V 3.6A SOT-23-3
ECAD Model:
Datasheet:
IRLML9301TRPBF

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Specifications
Infineon Technologies IRLML9301TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLML9301TRPBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Manufacturer Package Identifier
    IRLML9301TRPBF
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    2011
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    64MOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    Other Transistors
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    1.3W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.3W
  • Turn On Delay Time
    9.6 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    64m Ω @ 3.6A, 10V
  • Vgs(th) (Max) @ Id
    2.4V @ 10μA
  • Input Capacitance (Ciss) (Max) @ Vds
    388pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    3.6A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    4.8nC @ 4.5V
  • Rise Time
    19ns
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    15 ns
  • Turn-Off Delay Time
    16 ns
  • Continuous Drain Current (ID)
    -3.6A
  • Threshold Voltage
    -2.4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -30V
  • Recovery Time
    21 ns
  • Max Junction Temperature (Tj)
    150°C
  • Nominal Vgs
    -1.3 V
  • Height
    1.12mm
  • Length
    3.0226mm
  • Width
    1.397mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRLML9301TRPBF Description
IRLML9301TRPBF is an N-channel HEXFET Power MOSFET from the manufacturer of Infineon Technologies with a voltage of 30V. The operating temperature of IRLML9301TRPBF is -55°C~150°C TJ and its maximum power dissipation are 1.3W. IRLML9301TRPBF has 3 pins and it is available in TO-236-3, SC-59, and SOT-23-3 packaging way.

IRLML9301TRPBF Features
Resistance: 64MOhm
Operating Mode: ENHANCEMENT MODE
Transistor Application: SWITCHING
Transistor Element Material: SILICON

IRLML9301TRPBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
IRLML9301TRPBF More Descriptions
Transistor: P-MOSFET; unipolar; -30V; -3.6A; 0.064ohm; 1.3W; -55 150 deg.C; SMD; SOT23
-30V Single P-Channel HEXFET Power MOSFET in a Micro3 package, SOT23-3, RoHSInfineon SCT
Trans MOSFET P-CH 30V 3.6A 3-Pin SOT-23 T/R / MOSFET P-CH 30V 3.6A SOT-23-3
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: P Power dissipation: 1.3 W
Single N-Channel 30 V 64 mOhm 4.8 nC HEXFET® Power Mosfet - MICRO-3
Power Field-Effect Transistor, 3.6A I(D), 30V, 0.064ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
P Channel, MOSFET, -30V, -3.6 A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.6A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.064ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.3V ;RoHS Compliant: Yes
Benefits: RoHS Compliant; Low RDS(on); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; P-Channel MOSFET; SOT-23 Footprint | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side
Product Comparison
The three parts on the right have similar specifications to IRLML9301TRPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Manufacturer Package Identifier
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Recovery Time
    Max Junction Temperature (Tj)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Termination
    Additional Feature
    Voltage - Rated DC
    Current Rating
    Drain Current-Max (Abs) (ID)
    Dual Supply Voltage
    Surface Mount
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Operating Temperature (Max)
    Configuration
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    View Compare
  • IRLML9301TRPBF
    IRLML9301TRPBF
    12 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    SILICON
    IRLML9301TRPBF
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    2011
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    64MOhm
    Matte Tin (Sn)
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    1
    1
    1.3W Ta
    Single
    ENHANCEMENT MODE
    1.3W
    9.6 ns
    P-Channel
    SWITCHING
    64m Ω @ 3.6A, 10V
    2.4V @ 10μA
    388pF @ 25V
    3.6A Ta
    4.8nC @ 4.5V
    19ns
    30V
    4.5V 10V
    ±20V
    15 ns
    16 ns
    -3.6A
    -2.4V
    20V
    -30V
    21 ns
    150°C
    -1.3 V
    1.12mm
    3.0226mm
    1.397mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLMS4502TR
    -
    -
    Surface Mount
    SOT-23-6
    -
    -
    -
    -55°C~150°C TJ
    Cut Tape (CT)
    HEXFET®
    2003
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    1.7W Ta
    -
    -
    -
    -
    P-Channel
    -
    42mOhm @ 5.5A, 4.5V
    600mV @ 250μA
    1820pF @ 10V
    5.5A Ta
    33nC @ 5V
    -
    12V
    2.5V 4.5V
    ±12V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    Micro6™(TSOP-6)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLMS5703TRPBF
    7 Weeks
    Surface Mount
    Surface Mount
    SOT-23-6
    6
    SILICON
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    1997
    e3
    Not For New Designs
    1 (Unlimited)
    6
    EAR99
    180mOhm
    Matte Tin (Sn)
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    1
    -
    1.7W Ta
    Single
    ENHANCEMENT MODE
    1.7W
    10 ns
    P-Channel
    SWITCHING
    180m Ω @ 1.6A, 10V
    1V @ 250μA
    170pF @ 25V
    2.4A Ta
    11nC @ 10V
    12ns
    30V
    4.5V 10V
    ±20V
    8.4 ns
    20 ns
    -2.3A
    -1V
    20V
    -30V
    -
    -
    -1 V
    1.4478mm
    2.9972mm
    1.75mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    SMD/SMT
    ULTRA LOW RESISTANCE
    -30V
    -2.3A
    2.4A
    -30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLML5203
    -
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    SILICON
    -
    -
    Tube
    HEXFET®
    2003
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    Matte Tin (Sn)
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    1
    -
    1.25W Ta
    -
    ENHANCEMENT MODE
    -
    -
    P-Channel
    SWITCHING
    98m Ω @ 3A, 10V
    2.5V @ 250μA
    510pF @ 25V
    3A Ta
    14nC @ 10V
    -
    30V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    3A
    -
    YES
    NOT SPECIFIED
    NOT SPECIFIED
    R-PDSO-G3
    Not Qualified
    150°C
    SINGLE WITH BUILT-IN DIODE
    0.098Ohm
    24A
    30V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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