Infineon Technologies IRLML9301TRPBF
- Part Number:
- IRLML9301TRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2848765-IRLML9301TRPBF
- Description:
- MOSFET P-CH 30V 3.6A SOT-23-3
- Datasheet:
- IRLML9301TRPBF
Infineon Technologies IRLML9301TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLML9301TRPBF.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Manufacturer Package IdentifierIRLML9301TRPBF
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2011
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance64MOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max1.3W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.3W
- Turn On Delay Time9.6 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs64m Ω @ 3.6A, 10V
- Vgs(th) (Max) @ Id2.4V @ 10μA
- Input Capacitance (Ciss) (Max) @ Vds388pF @ 25V
- Current - Continuous Drain (Id) @ 25°C3.6A Ta
- Gate Charge (Qg) (Max) @ Vgs4.8nC @ 4.5V
- Rise Time19ns
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)15 ns
- Turn-Off Delay Time16 ns
- Continuous Drain Current (ID)-3.6A
- Threshold Voltage-2.4V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-30V
- Recovery Time21 ns
- Max Junction Temperature (Tj)150°C
- Nominal Vgs-1.3 V
- Height1.12mm
- Length3.0226mm
- Width1.397mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRLML9301TRPBF Description
IRLML9301TRPBF is an N-channel HEXFET Power MOSFET from the manufacturer of Infineon Technologies with a voltage of 30V. The operating temperature of IRLML9301TRPBF is -55°C~150°C TJ and its maximum power dissipation are 1.3W. IRLML9301TRPBF has 3 pins and it is available in TO-236-3, SC-59, and SOT-23-3 packaging way.
IRLML9301TRPBF Features
Resistance: 64MOhm
Operating Mode: ENHANCEMENT MODE
Transistor Application: SWITCHING
Transistor Element Material: SILICON
IRLML9301TRPBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
IRLML9301TRPBF is an N-channel HEXFET Power MOSFET from the manufacturer of Infineon Technologies with a voltage of 30V. The operating temperature of IRLML9301TRPBF is -55°C~150°C TJ and its maximum power dissipation are 1.3W. IRLML9301TRPBF has 3 pins and it is available in TO-236-3, SC-59, and SOT-23-3 packaging way.
IRLML9301TRPBF Features
Resistance: 64MOhm
Operating Mode: ENHANCEMENT MODE
Transistor Application: SWITCHING
Transistor Element Material: SILICON
IRLML9301TRPBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
IRLML9301TRPBF More Descriptions
Transistor: P-MOSFET; unipolar; -30V; -3.6A; 0.064ohm; 1.3W; -55 150 deg.C; SMD; SOT23
-30V Single P-Channel HEXFET Power MOSFET in a Micro3 package, SOT23-3, RoHSInfineon SCT
Trans MOSFET P-CH 30V 3.6A 3-Pin SOT-23 T/R / MOSFET P-CH 30V 3.6A SOT-23-3
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: P Power dissipation: 1.3 W
Single N-Channel 30 V 64 mOhm 4.8 nC HEXFET® Power Mosfet - MICRO-3
Power Field-Effect Transistor, 3.6A I(D), 30V, 0.064ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
P Channel, MOSFET, -30V, -3.6 A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.6A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.064ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.3V ;RoHS Compliant: Yes
Benefits: RoHS Compliant; Low RDS(on); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; P-Channel MOSFET; SOT-23 Footprint | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side
-30V Single P-Channel HEXFET Power MOSFET in a Micro3 package, SOT23-3, RoHSInfineon SCT
Trans MOSFET P-CH 30V 3.6A 3-Pin SOT-23 T/R / MOSFET P-CH 30V 3.6A SOT-23-3
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: P Power dissipation: 1.3 W
Single N-Channel 30 V 64 mOhm 4.8 nC HEXFET® Power Mosfet - MICRO-3
Power Field-Effect Transistor, 3.6A I(D), 30V, 0.064ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
P Channel, MOSFET, -30V, -3.6 A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.6A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.064ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.3V ;RoHS Compliant: Yes
Benefits: RoHS Compliant; Low RDS(on); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; P-Channel MOSFET; SOT-23 Footprint | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side
The three parts on the right have similar specifications to IRLML9301TRPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialManufacturer Package IdentifierOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageRecovery TimeMax Junction Temperature (Tj)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageTerminationAdditional FeatureVoltage - Rated DCCurrent RatingDrain Current-Max (Abs) (ID)Dual Supply VoltageSurface MountPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusOperating Temperature (Max)ConfigurationDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinView Compare
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IRLML9301TRPBF12 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICONIRLML9301TRPBF-55°C~150°C TJTape & Reel (TR)HEXFET®2011e3Active1 (Unlimited)3EAR9964MOhmMatte Tin (Sn)Other TransistorsMOSFET (Metal Oxide)DUALGULL WING111.3W TaSingleENHANCEMENT MODE1.3W9.6 nsP-ChannelSWITCHING64m Ω @ 3.6A, 10V2.4V @ 10μA388pF @ 25V3.6A Ta4.8nC @ 4.5V19ns30V4.5V 10V±20V15 ns16 ns-3.6A-2.4V20V-30V21 ns150°C-1.3 V1.12mm3.0226mm1.397mmNo SVHCNoROHS3 CompliantLead Free------------------
-
--Surface MountSOT-23-6----55°C~150°C TJCut Tape (CT)HEXFET®2003-Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)----1.7W Ta----P-Channel-42mOhm @ 5.5A, 4.5V600mV @ 250μA1820pF @ 10V5.5A Ta33nC @ 5V-12V2.5V 4.5V±12V--------------Non-RoHS Compliant-Micro6™(TSOP-6)----------------
-
7 WeeksSurface MountSurface MountSOT-23-66SILICON--55°C~150°C TJTape & Reel (TR)HEXFET®1997e3Not For New Designs1 (Unlimited)6EAR99180mOhmMatte Tin (Sn)-MOSFET (Metal Oxide)DUALGULL WING1-1.7W TaSingleENHANCEMENT MODE1.7W10 nsP-ChannelSWITCHING180m Ω @ 1.6A, 10V1V @ 250μA170pF @ 25V2.4A Ta11nC @ 10V12ns30V4.5V 10V±20V8.4 ns20 ns-2.3A-1V20V-30V---1 V1.4478mm2.9972mm1.75mmNo SVHCNoROHS3 CompliantLead Free-SMD/SMTULTRA LOW RESISTANCE-30V-2.3A2.4A-30V----------
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--Surface MountTO-236-3, SC-59, SOT-23-3-SILICON--TubeHEXFET®2003e3Obsolete1 (Unlimited)3EAR99-Matte Tin (Sn)Other TransistorsMOSFET (Metal Oxide)DUALGULL WING1-1.25W Ta-ENHANCEMENT MODE--P-ChannelSWITCHING98m Ω @ 3A, 10V2.5V @ 250μA510pF @ 25V3A Ta14nC @ 10V-30V4.5V 10V±20V--------------Non-RoHS Compliant------3A-YESNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G3Not Qualified150°CSINGLE WITH BUILT-IN DIODE0.098Ohm24A30V
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