Infineon Technologies IRLML6244TRPBF
- Part Number:
- IRLML6244TRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2479178-IRLML6244TRPBF
- Description:
- MOSFET N-CH 20V 6.3A SOT-23
- Datasheet:
- IRLML6244TRPBF
Infineon Technologies IRLML6244TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLML6244TRPBF.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2012
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance27MOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max1.3W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.3W
- Turn On Delay Time4.9 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs21m Ω @ 6.3A, 4.5V
- Vgs(th) (Max) @ Id1.1V @ 10μA
- Input Capacitance (Ciss) (Max) @ Vds700pF @ 16V
- Current - Continuous Drain (Id) @ 25°C6.3A Ta
- Gate Charge (Qg) (Max) @ Vgs8.9nC @ 4.5V
- Rise Time7.5ns
- Drive Voltage (Max Rds On,Min Rds On)2.5V 4.5V
- Vgs (Max)±12V
- Fall Time (Typ)12 ns
- Turn-Off Delay Time19 ns
- Continuous Drain Current (ID)6.3A
- Threshold Voltage900mV
- Gate to Source Voltage (Vgs)12V
- Drain to Source Breakdown Voltage20V
- Recovery Time18 ns
- Max Junction Temperature (Tj)150°C
- Nominal Vgs12 V
- Height1.12mm
- Length3.04mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRLML6244TRPBF Description
The ON Semiconductor Semiconductor FQPF70N10 is an N-Channel enhancement mode power MOSFET that uses the company's unique planar stripe and DMOS technology. FQPF70N10 advanced MOSFET technology has been specifically developed to reduce on-state resistance, improve switching performance, and provide strong avalanche energy strength. Switched-mode power supply, audio amplifiers, DC motor control, and variable switching power applications all benefit from FQPF70N10 MOSFETs.
IRLML6244TRPBF Features Low RDS(on) ( < 21m?)
Industry-standard SOT-23 Package
RoHS compliant contains no lead, no bromide, and no halogen ?
Lower conduction losses
Multi-vendor compatibility
Environmentally friend
IRLML6244TRPBF Applications Load/ System Swit
Battery protection
SMPS
DC switch
Load switch
IRLML6244TRPBF Features Low RDS(on) ( < 21m?)
Industry-standard SOT-23 Package
RoHS compliant contains no lead, no bromide, and no halogen ?
Lower conduction losses
Multi-vendor compatibility
Environmentally friend
IRLML6244TRPBF Applications Load/ System Swit
Battery protection
SMPS
DC switch
Load switch
IRLML6244TRPBF More Descriptions
Trans MOSFET N-CH 20V 6.3A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled
Transistor MOSFET N-Ch. 20V 6,3A 1,3W 0,021Ohm SOT23 IRLML6244TRPBF
20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHSInfineon SCT
Single N-Channel 20 V 27 mOhm 8.9 nC HEXFET® Power Mosfet - SOT-23
Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6.3A; On Resistance Rds(On):0.021Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:900Mv Rohs Compliant: Yes
Benefits: RoHS Compliant; Low RDS(on); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; SOT-23 Footprint | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side
MOSFET,N CH,20V,6.3A,SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:6.3A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:12V; Power Dissipation Pd:1.3W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Pd:1.3W; Voltage Vgs Max:12V
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 6.3 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 27 / Gate-Source Voltage V = 12 / Fall Time ns = 12 / Rise Time ns = 7.5 / Turn-OFF Delay Time ns = 19 / Turn-ON Delay Time ns = 4.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 1.3
Transistor MOSFET N-Ch. 20V 6,3A 1,3W 0,021Ohm SOT23 IRLML6244TRPBF
20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHSInfineon SCT
Single N-Channel 20 V 27 mOhm 8.9 nC HEXFET® Power Mosfet - SOT-23
Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6.3A; On Resistance Rds(On):0.021Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:900Mv Rohs Compliant: Yes
Benefits: RoHS Compliant; Low RDS(on); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; SOT-23 Footprint | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side
MOSFET,N CH,20V,6.3A,SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:6.3A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:12V; Power Dissipation Pd:1.3W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Pd:1.3W; Voltage Vgs Max:12V
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 6.3 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 27 / Gate-Source Voltage V = 12 / Fall Time ns = 12 / Rise Time ns = 7.5 / Turn-OFF Delay Time ns = 19 / Turn-ON Delay Time ns = 4.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 1.3
The three parts on the right have similar specifications to IRLML6244TRPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageRecovery TimeMax Junction Temperature (Tj)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeMax Operating TemperatureMin Operating TemperatureAdditional FeatureDrain to Source Voltage (Vdss)Polarity/Channel TypeDrain Current-Max (Abs) (ID)FET TechnologyDrain to Source ResistanceRds On MaxCapacitance - InputContact PlatingTerminationVoltage - Rated DCCurrent RatingPulsed Drain Current-Max (IDM)Dual Supply VoltageSupplier Device PackageView Compare
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IRLML6244TRPBF12 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON-55°C~150°C TJTape & Reel (TR)HEXFET®2012e3Active1 (Unlimited)3EAR9927MOhmMatte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING111.3W TaSingleENHANCEMENT MODE1.3W4.9 nsN-ChannelSWITCHING21m Ω @ 6.3A, 4.5V1.1V @ 10μA700pF @ 16V6.3A Ta8.9nC @ 4.5V7.5ns2.5V 4.5V±12V12 ns19 ns6.3A900mV12V20V18 ns150°C12 V1.12mm3.04mm1.4mmNo SVHCNoROHS3 CompliantLead Free------------------
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-Surface Mount-SOT-233-----e3-1 (Unlimited)3EAR99-Matte Tin (Sn)Other Transistors-DUALGULL WING1-540mWSingleENHANCEMENT MODE540mW10 ns-SWITCHING-----8.2ns--16 ns23 ns760mA-20V-30V---1.016mm3.0226mm1.397mm-NoRoHS Compliant-150°C-55°CHIGH RELIABILITY30VP-CHANNEL0.76AMETAL-OXIDE SEMICONDUCTOR600mOhm600 mΩ75pF-------
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12 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON-55°C~150°C TJTape & Reel (TR)HEXFET®2003e3Active1 (Unlimited)3EAR9998MOhm-Other TransistorsMOSFET (Metal Oxide)DUALGULL WING1-1.25W TaSingleENHANCEMENT MODE1.25W12 nsP-ChannelSWITCHING98m Ω @ 3A, 10V2.5V @ 250μA510pF @ 25V3A Ta14nC @ 10V18ns4.5V 10V±20V52 ns88 ns-3A-2.5V20V-30V---2.5 V1.016mm3.0226mm3.05mmNo SVHCNoROHS3 CompliantContains Lead---30V-3A----TinSMD/SMT-30V-3A24A-30V-
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--Surface MountSOT-23-6---55°C~150°C TJCut Tape (CT)HEXFET®2003-Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)----1.7W Ta----P-Channel-42mOhm @ 5.5A, 4.5V600mV @ 250μA1820pF @ 10V5.5A Ta33nC @ 5V-2.5V 4.5V±12V--------------Non-RoHS Compliant----12V------------Micro6™(TSOP-6)
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