IRLML6244TRPBF

Infineon Technologies IRLML6244TRPBF

Part Number:
IRLML6244TRPBF
Manufacturer:
Infineon Technologies
Ventron No:
2479178-IRLML6244TRPBF
Description:
MOSFET N-CH 20V 6.3A SOT-23
ECAD Model:
Datasheet:
IRLML6244TRPBF

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Specifications
Infineon Technologies IRLML6244TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLML6244TRPBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    2012
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    27MOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    1.3W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.3W
  • Turn On Delay Time
    4.9 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    21m Ω @ 6.3A, 4.5V
  • Vgs(th) (Max) @ Id
    1.1V @ 10μA
  • Input Capacitance (Ciss) (Max) @ Vds
    700pF @ 16V
  • Current - Continuous Drain (Id) @ 25°C
    6.3A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    8.9nC @ 4.5V
  • Rise Time
    7.5ns
  • Drive Voltage (Max Rds On,Min Rds On)
    2.5V 4.5V
  • Vgs (Max)
    ±12V
  • Fall Time (Typ)
    12 ns
  • Turn-Off Delay Time
    19 ns
  • Continuous Drain Current (ID)
    6.3A
  • Threshold Voltage
    900mV
  • Gate to Source Voltage (Vgs)
    12V
  • Drain to Source Breakdown Voltage
    20V
  • Recovery Time
    18 ns
  • Max Junction Temperature (Tj)
    150°C
  • Nominal Vgs
    12 V
  • Height
    1.12mm
  • Length
    3.04mm
  • Width
    1.4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRLML6244TRPBF Description The ON Semiconductor Semiconductor FQPF70N10 is an N-Channel enhancement mode power MOSFET that uses the company's unique planar stripe and DMOS technology. FQPF70N10 advanced MOSFET technology has been specifically developed to reduce on-state resistance, improve switching performance, and provide strong avalanche energy strength. Switched-mode power supply, audio amplifiers, DC motor control, and variable switching power applications all benefit from FQPF70N10 MOSFETs.
IRLML6244TRPBF Features Low RDS(on) ( < 21m?)
Industry-standard SOT-23 Package
RoHS compliant contains no lead, no bromide, and no halogen ? 
Lower conduction losses
Multi-vendor compatibility
Environmentally friend
IRLML6244TRPBF Applications Load/ System Swit
Battery protection
SMPS
DC switch
Load switch
IRLML6244TRPBF More Descriptions
Trans MOSFET N-CH 20V 6.3A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled
Transistor MOSFET N-Ch. 20V 6,3A 1,3W 0,021Ohm SOT23 IRLML6244TRPBF
20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHSInfineon SCT
Single N-Channel 20 V 27 mOhm 8.9 nC HEXFET® Power Mosfet - SOT-23
Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6.3A; On Resistance Rds(On):0.021Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:900Mv Rohs Compliant: Yes
Benefits: RoHS Compliant; Low RDS(on); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; SOT-23 Footprint | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side
MOSFET,N CH,20V,6.3A,SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:6.3A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:12V; Power Dissipation Pd:1.3W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Pd:1.3W; Voltage Vgs Max:12V
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 6.3 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 27 / Gate-Source Voltage V = 12 / Fall Time ns = 12 / Rise Time ns = 7.5 / Turn-OFF Delay Time ns = 19 / Turn-ON Delay Time ns = 4.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 1.3
Product Comparison
The three parts on the right have similar specifications to IRLML6244TRPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Recovery Time
    Max Junction Temperature (Tj)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Max Operating Temperature
    Min Operating Temperature
    Additional Feature
    Drain to Source Voltage (Vdss)
    Polarity/Channel Type
    Drain Current-Max (Abs) (ID)
    FET Technology
    Drain to Source Resistance
    Rds On Max
    Capacitance - Input
    Contact Plating
    Termination
    Voltage - Rated DC
    Current Rating
    Pulsed Drain Current-Max (IDM)
    Dual Supply Voltage
    Supplier Device Package
    View Compare
  • IRLML6244TRPBF
    IRLML6244TRPBF
    12 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    2012
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    27MOhm
    Matte Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    1
    1
    1.3W Ta
    Single
    ENHANCEMENT MODE
    1.3W
    4.9 ns
    N-Channel
    SWITCHING
    21m Ω @ 6.3A, 4.5V
    1.1V @ 10μA
    700pF @ 16V
    6.3A Ta
    8.9nC @ 4.5V
    7.5ns
    2.5V 4.5V
    ±12V
    12 ns
    19 ns
    6.3A
    900mV
    12V
    20V
    18 ns
    150°C
    12 V
    1.12mm
    3.04mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLML5103GTRPBF
    -
    Surface Mount
    -
    SOT-23
    3
    -
    -
    -
    -
    -
    e3
    -
    1 (Unlimited)
    3
    EAR99
    -
    Matte Tin (Sn)
    Other Transistors
    -
    DUAL
    GULL WING
    1
    -
    540mW
    Single
    ENHANCEMENT MODE
    540mW
    10 ns
    -
    SWITCHING
    -
    -
    -
    -
    -
    8.2ns
    -
    -
    16 ns
    23 ns
    760mA
    -
    20V
    -30V
    -
    -
    -
    1.016mm
    3.0226mm
    1.397mm
    -
    No
    RoHS Compliant
    -
    150°C
    -55°C
    HIGH RELIABILITY
    30V
    P-CHANNEL
    0.76A
    METAL-OXIDE SEMICONDUCTOR
    600mOhm
    600 mΩ
    75pF
    -
    -
    -
    -
    -
    -
    -
  • IRLML5203TRPBF
    12 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    2003
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    98MOhm
    -
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    1
    -
    1.25W Ta
    Single
    ENHANCEMENT MODE
    1.25W
    12 ns
    P-Channel
    SWITCHING
    98m Ω @ 3A, 10V
    2.5V @ 250μA
    510pF @ 25V
    3A Ta
    14nC @ 10V
    18ns
    4.5V 10V
    ±20V
    52 ns
    88 ns
    -3A
    -2.5V
    20V
    -30V
    -
    -
    -2.5 V
    1.016mm
    3.0226mm
    3.05mm
    No SVHC
    No
    ROHS3 Compliant
    Contains Lead
    -
    -
    -
    30V
    -
    3A
    -
    -
    -
    -
    Tin
    SMD/SMT
    -30V
    -3A
    24A
    -30V
    -
  • IRLMS4502TR
    -
    -
    Surface Mount
    SOT-23-6
    -
    -
    -55°C~150°C TJ
    Cut Tape (CT)
    HEXFET®
    2003
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    1.7W Ta
    -
    -
    -
    -
    P-Channel
    -
    42mOhm @ 5.5A, 4.5V
    600mV @ 250μA
    1820pF @ 10V
    5.5A Ta
    33nC @ 5V
    -
    2.5V 4.5V
    ±12V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    12V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Micro6™(TSOP-6)
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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