Infineon Technologies IRLML2803TRPBF

Name: IRLML2803TRPBF
Brand: Infineon Technologies
SKU: 2478954-IRLML2803TRPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRLML2803TRPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2478954-IRLML2803TRPBF

Description:: MOSFET N-CH 30V 1.2A SOT-23

ECAD Model:

Datasheet:: IRLML2803TRPBF

Part Pictures

Specifications

Infineon Technologies IRLML2803TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLML2803TRPBF.

Factory Lead Time
12 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Manufacturer Package Identifier
Micro3
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
2007
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
250mOhm
Additional Feature
HIGH RELIABILITY
Subcategory
FET General Purpose Power
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
1.2A
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
540mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
540mW
Turn On Delay Time
3.9 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
250m Ω @ 910mA, 10V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
85pF @ 25V
Current - Continuous Drain (Id) @ 25°C
1.2A Ta
Gate Charge (Qg) (Max) @ Vgs
5nC @ 10V
Rise Time
4ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
1.7 ns
Turn-Off Delay Time
9 ns
Continuous Drain Current (ID)
1.2A
Threshold Voltage
1V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Dual Supply Voltage
30V
Max Junction Temperature (Tj)
150°C
Nominal Vgs
1 V
Min Breakdown Voltage
30V
Height
1.12mm
Length
3.0226mm
Width
1.397mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRLML2803TRPBF Description

The IRLML2803PBF is a N-channel HEXFET? Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. Fifth generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET? Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
IRLML2803TRPBF Features

Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below Industry standard surface-mount package
IRLML2803TRPBF Applications

DC Switches
Load Switch
New energy vehicles
photovoltaic & wind power generation
smart grid

IRLML2803TRPBF More Descriptions

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.25Ohm;ID 1.2A;Micro3;PD 540mW;VGS /-20V
INFINEON SMD MOSFET NFET 30V 1,2A 250mΩ 150°C SOT-23 IRLML2803TR
30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
INTERNATIONAL RECTIFIER IRLML2803TRPBF / MOSFET N-CH 30V 1.2A SOT-23 IN
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 540 mW
Transistor NPN Mos IRLML2803 INTERNATIONAL RECTIFIER Ampere=1.2 V=30 SOt23
Small Signal Field-Effect Transistor, 1.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO3, 3 PIN
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: DC Switches; Load Switch
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:1.2A; On Resistance, Rds(on):250mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:Micro3 ;RoHS Compliant: Yes
MOSFET, N REEL 3K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:0.85A; Resistance, Rds On:0.3ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:7.3A; External Depth:2.5mm; External Length / Height:1.12mm; No. of Pins:3; Power Dissipation:0.4W; Power, Pd:0.4W; Quantity, Reel:3000; SMD Marking:1B; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Min:-55°C; Transistors, No. of:1; Voltage, Vds Max:30V; Voltage, Vgs th Max:2.5V; Width, External:3.05mm; Width, Tape:8mm

Product Comparison

The three parts on the right have similar specifications to IRLML2803TRPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Manufacturer Package Identifier

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Current Rating

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Max Junction Temperature (Tj)

Nominal Vgs

Min Breakdown Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Terminal Finish

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Drain to Source Voltage (Vdss)

Recovery Time

Max Operating Temperature

Min Operating Temperature

Polarity/Channel Type

Drain Current-Max (Abs) (ID)

FET Technology

Drain to Source Resistance

Rds On Max

Capacitance - Input

Surface Mount

JESD-30 Code

Qualification Status

Operating Temperature (Max)

Configuration

JEDEC-95 Code

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Power Dissipation-Max (Abs)

View Compare
IRLML2803TRPBF

Infineon Technologies

12 Weeks

Tin

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

SILICON

Micro3

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®

2007

e3

Active

1 (Unlimited)

3

SMD/SMT

EAR99

250mOhm

HIGH RELIABILITY

FET General Purpose Power

30V

MOSFET (Metal Oxide)

DUAL

GULL WING

1.2A

1

1

540mW Ta

Single

ENHANCEMENT MODE

540mW

3.9 ns

N-Channel

SWITCHING

250m Ω @ 910mA, 10V

1V @ 250μA

85pF @ 25V

1.2A Ta

5nC @ 10V

4ns

4.5V 10V

±20V

1.7 ns

9 ns

1.2A

1V

20V

30V

30V

150°C

1 V

30V

1.12mm

3.0226mm

1.397mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRLML2244TRPBF

Infineon Technologies

12 Weeks

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

SILICON

-

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®

2011

e3

Active

1 (Unlimited)

3

-

EAR99

95MOhm

-

Other Transistors

-

MOSFET (Metal Oxide)

DUAL

GULL WING

-

1

-

1.3W Ta

Single

ENHANCEMENT MODE

1.3W

7 ns

P-Channel

SWITCHING

54m Ω @ 4.3A, 4.5V

1.1V @ 10μA

570pF @ 16V

4.3A Ta

6.9nC @ 4.5V

12ns

2.5V 4.5V

±12V

25 ns

34 ns

4.3A

-1.1V

12V

-20V

-

-

-1.1 V

-

1.02mm

3.04mm

1.4mm

No SVHC

No

ROHS3 Compliant

Lead Free

Matte Tin (Sn)

260

30

20V

32 ns

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRLML2803TRPBF vs IRLML2244TRPBF
IRLML5103GTRPBF

Infineon Technologies

-

-

Surface Mount

-

SOT-23

3

-

-

-

-

-

-

e3

-

1 (Unlimited)

3

-

EAR99

-

HIGH RELIABILITY

Other Transistors

-

-

DUAL

GULL WING

-

1

-

540mW

Single

ENHANCEMENT MODE

540mW

10 ns

-

SWITCHING

-

-

-

-

-

8.2ns

-

-

16 ns

23 ns

760mA

-

20V

-30V

-

-

-

-

1.016mm

3.0226mm

1.397mm

-

No

RoHS Compliant

-

Matte Tin (Sn)

-

-

30V

-

150°C

-55°C

P-CHANNEL

0.76A

METAL-OXIDE SEMICONDUCTOR

600mOhm

600 mΩ

75pF

-

-

-

-

-

-

-

-

-

-

-

IRLML2803TRPBF vs IRLML5103GTRPBF
IRLML6402TR

Infineon Technologies

-

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

SILICON

-

-

Cut Tape (CT)

HEXFET®

2003

e3

Obsolete

1 (Unlimited)

3

-

EAR99

-

HIGH RELIABILITY

Other Transistors

-

MOSFET (Metal Oxide)

DUAL

GULL WING

-

1

-

-

-

ENHANCEMENT MODE

-

-

P-Channel

SWITCHING

65m Ω @ 3.7A, 4.5V

1.2V @ 250μA

633pF @ 10V

3.7A Ta

12nC @ 5V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

Matte Tin (Sn)

260

30

20V

-

-

-

-

3.7A

-

-

-

-

YES

R-PDSO-G3

Not Qualified

150°C

SINGLE WITH BUILT-IN DIODE

TO-236AB

0.065Ohm

22A

20V

11 mJ

1.3W

IRLML2803TRPBF vs IRLML6402TR

Certification

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IRLML5103GTRPBF

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MOSFET P-CH 30V 0.76A SOT-23-3
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IRLML2803TRPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRLML2803TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 1.2A 3-Pin SOT-23 T/R RoHS: Compliant	24000	3000 $0.094
IRLML2803TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 1.2A 3-Pin SOT-23 T/R RoHS: Compliant	2296	1 $0.361 10 $0.2688 25 $0.242 100 $0.1463 250 $0.1317 500 $0.1185 1000 $0.1093
IRLML2803TRPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 30V 1.2A SOT-23 RoHS: Compliant	66782	1 $0.53 10 $0.372 100 $0.2443 500 $0.14434 1000 $0.11103
IRLML2803TRPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 30V 1.2A SOT-23 RoHS: Compliant	66782	1 $0.53 10 $0.372 100 $0.2443 500 $0.14434 1000 $0.11103
IRLML2803TRPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 30V 1.2A SOT-23 RoHS: Compliant	66000	3000 $0.09702
IRLML2803TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 1.2A 3-Pin SOT-23 T/R RoHS: Compliant	21000	3000 $0.094
IRLML2803TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 1.2A 3-Pin SOT-23 T/R RoHS: Compliant	2296	89 $0.242 100 $0.1463 250 $0.1317 500 $0.1185 1000 $0.1093
IRLML2803TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 1.2A 3-Pin Micro T/R - Cut T RoHS: Compliant	27	1 $0.2689 30 $0.2219 75 $0.1629 150 $0.1339 375 $0.1329 750 $0.1179 1500 $0.1069
IRLML2803TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 1.2A 3-Pin Micro T/R (Alt: I RoHS: Compliant	3000	3000 $0.07659 6000 $0.07344 9000 $0.07245 15000 $0.06963 30000 $0.06873 75000 $0.06702 150000 $0.06538
IRLML2803TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 1.2A 3-Pin Micro T/R (Alt: S RoHS: Compliant	165985	3000 $0.0769 6000 $0.0749 12000 $0.0729 18000 $0.0729 30000 $0.0729
IRLML2803TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 1.2A 3-Pin Micro T/R - Tape RoHS: Compliant	0	3000 $0.0899 6000 $0.0869 12000 $0.0829 18000 $0.0809 30000 $0.0789
IRLML2803TRPBF-1 DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 1.2A 3-Pin SOT-23 T/R (Alt: RoHS: Compliant	0
IRLML2803TRPBF-1 DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 1.2A 3-Pin SOT-23 T/R - Tape RoHS: Compliant	0
IRLML2803TRPBF DISTI #	Infineon Technologies AG	N CHANNEL MOSFET, 30V, 1.2A, SOT-23, Transistor P	202	1 $0.583 10 $0.409 25 $0.362 50 $0.316 100 $0.268 250 $0.213 500 $0.158 1000 $0.122
IRLML2803TRPBF. DISTI #	Infineon Technologies AG	N CHANNEL MOSFET, 30V, 1.2A, SOT-23, Transistor P	0	1 $0.096 6000 $0.093 12000 $0.089 18000 $0.086 30000 $0.082 60000 $0.079
IRLML2803TRPBF DISTI #	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 30V, RDS(ON) 0.25Ohm RoHS: Compliant	3010	1 $0.24 10 $0.21 100 $0.18 500 $0.16 1000 $0.14
IRLML2803TRPBF DISTI #	Infineon Technologies AG	Single N-Channel 30 V 0.4 Ohm 5 nC HEXFET Power Mo RoHS: Compliant	5335	1 $0.115 250 $0.101 500 $0.099 750 $0.098 1500 $0.095
IRLML2803TRPBF DISTI #	Infineon Technologies AG	Single N-Channel 30 V 0.4 Ohm 5 nC HEXFET Power Mo RoHS: Compliant	303000	3000 $0.0851 6000 $0.0806 12000 $0.0787
IRLML2803TRPBF DISTI #	International Rectifier	Small Signal Field-Effect Transistor, 1.2A I(D), 3 RoHS: Compliant	374	1 $0.1 25 $0.09 100 $0.09 500 $0.08 1000 $0.08
IRLML2803TRPBF DISTI #	Infineon Technologies AG	MOSFET MOSFT 30V 1.2A 250mOhm 3.3nC LogLvl RoHS: Compliant	28324	1 $0.38 10 $0.283 100 $0.154 1000 $0.115 3000 $0.099
IRLML2803TRPBF DISTI #	IandR	1200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	11	1 $0.56 10 $0.448
IRLML2803TRPBF DISTI #	International Rectifier	1200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	2146	1 $1.3 309 $0.52 1539 $0.455
IRLML2803TRPBF DISTI #	International Rectifier	1200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	61	1 $1.375 5 $1.1 19 $0.825
IRLML2803TRPBF DISTI #	International Rectifier	1200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	14	1 $2.24 3 $1.68
IRLML2803TRPBF DISTI #	International Rectifier		205
IRLML2803TRPBF DISTI #	International Rectifier		4531
IRLML2803TRPBF DISTI #	Infineon Technologies AG	MOSFET N-CHANNEL 30V 1.2A SOT23, RL	28595	50 $0.21 150 $0.116 750 $0.102 1500 $0.088
IRLML2803TRPBF DISTI #	Infineon Technologies AG	MOSFET N-CHANNEL 30V 1.2A SOT23, PK	2150	5 $0.4 50 $0.21 150 $0.116 750 $0.102 1500 $0.088
IRLML2803TRPBF DISTI #	Infineon Technologies AG	Transistor: N-MOSFET, unipolar, 30V, 1.2A, 0.4	11958	5 $0.1569 25 $0.1171 100 $0.0957 500 $0.0823 3000 $0.0754
IRLML2803TRPBF DISTI #	Infineon Technologies AG	N-CH 30V 1.2A 250mOhm Micro3 RoHS: Compliant	0	3000 $0.1125 6000 $0.1061 12000 $0.0997 18000 $0.09 36000 $0.0868
IRLML2803TRPBF DISTI #	Infineon Technologies AG	30V,250m,1.2A,N-Channel Power MOSFET	4800	1 $0.13 100 $0.11 500 $0.1 1000 $0.1
IRLML2803TRPBF DISTI #	INF	RoHS: Compliant	59029	6000 $0.1129 59029 $0.1053
IRLML2803TRPBF DISTI #	Infineon Technologies AG	RoHS: Compliant	229718	3000 $0.23 229718 $0.2091
IRLML2803TRPBF DISTI #	International Rectifier	RoHS (ship within 1day)	2683	1 $1.16 10 $0.67 50 $0.45 100 $0.34 500 $0.29 1000 $0.26
IRLML2803TRPBF DISTI #	Infineon Technologies AG	N-LogL 30V 1,2A 0,54W 0,25R SOT23 RoHS: Compliant	103900	100 $0.1265 500 $0.0865 3000 $0.0765 6000 $0.0735
IRLML2803TRPBF DISTI #	International Rectifier	RoHS: Compliant	2695
IRLML2803TRPBF DISTI #	International Rectifier	INSTOCK	3050
IRLML2803TRPBF DISTI #	Infineon Technologies AG	INSTOCK	4410
IRLML2803TRPBF DISTI #	International Rectifier	INSTOCK	5033
IRLML2803TRPBF DISTI #	Infineon Technologies AG	MOSFET, N, LOGIC, SOT-23 RoHS: Compliant	1919	5 $0.242 25 $0.216 100 $0.119 250 $0.115 500 $0.105
IRLML2803TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 1.2A 3-Pin SOT-23 T/R RoHS: Compliant	5560	25 $0.206 50 $0.167 100 $0.137
IRLML2803TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 1.2A 3-Pin SOT-23 T/R RoHS: Compliant	2296	25 $0.242 100 $0.1463 250 $0.1317
IRLML2803TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 1.2A 3-Pin SOT-23 T/R RoHS: Compliant	63000	3000 $0.115 6000 $0.106 12000 $0.0884
IRLML2803TRPBF DISTI #	Infineon Technologies AG	MOSFET, N, LOGIC, SOT-23 RoHS: Compliant	0	1 $0.84 10 $0.59 100 $0.387 500 $0.229 1000 $0.176
IRLML2803TRPBF DISTI #	Infineon Technologies AG	MOSFET, N REEL 3K RoHS: Compliant	0	1 $494.35
IRLML2803TRPBF DISTI #	Infineon Technologies AG	MOSFET, N, LOGIC, SOT-23 RoHS: Compliant	8509	1 $0.84 10 $0.59 100 $0.387 500 $0.229 1000 $0.176
IRLML2803TRPBF. DISTI #	Infineon Technologies AG	RoHS: Compliant	6620	1 $0.602 10 $0.448 100 $0.244 1000 $0.182 3000 $0.157

IRLML28~~(7)~~
IRLML2~~(34)~~
IRLML~~(78)~~
IRLM~~(83)~~
IRL~~(58)~~

Infineon Technologies IRLML2803TRPBF

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