Infineon Technologies IRLML2803TR
- Part Number:
- IRLML2803TR
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3071596-IRLML2803TR
- Description:
- MOSFET N-CH 30V 1.2A SOT-23
- ECAD Model:
-
- Datasheet:
- IRLML2803
Infineon Technologies IRLML2803TR technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLML2803TR.
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Transistor Element MaterialSILICON
- PackagingCut Tape (CT)
- SeriesHEXFET®
- Published2003
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- HTS Code8541.21.00.95
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PDSO-G3
- Qualification StatusNot Qualified
- Operating Temperature (Max)150°C
- Operating Temperature (Min)-55°C
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Operating ModeENHANCEMENT MODE
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs250m Ω @ 910mA, 10V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds85pF @ 25V
- Current - Continuous Drain (Id) @ 25°C1.2A Ta
- Gate Charge (Qg) (Max) @ Vgs5nC @ 10V
- Drain to Source Voltage (Vdss)30V
- JEDEC-95 CodeTO-236AB
- Drain Current-Max (Abs) (ID)1.2A
- Drain-source On Resistance-Max0.25Ohm
- DS Breakdown Voltage-Min30V
- Power Dissipation-Max (Abs)0.54W
- RoHS StatusNon-RoHS Compliant
IRLML2803TR Description
IRLML2803TR is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 30V. The operating temperature of IRLML2803TR is 150°C and its maximum power dissipation is 0.54W. IRLML2803TR has 3 pins and it is available in Cut Tape (CT) packaging way.
IRLML2803TR Features
AEC-Q101 qualified
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
IRLML2803TR Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
IRLML2803TR is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 30V. The operating temperature of IRLML2803TR is 150°C and its maximum power dissipation is 0.54W. IRLML2803TR has 3 pins and it is available in Cut Tape (CT) packaging way.
IRLML2803TR Features
AEC-Q101 qualified
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
IRLML2803TR Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
IRLML2803TR More Descriptions
30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package
Trans MOSFET N-CH 30V 1.2A 3-Pin SOT-23 T/R
Small Signal Field-Effect Transistor, 1.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO3, 3 PIN
Trans MOSFET N-CH 30V 1.2A 3-Pin SOT-23 T/R
Small Signal Field-Effect Transistor, 1.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO3, 3 PIN
The three parts on the right have similar specifications to IRLML2803TR.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialPackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusOperating Temperature (Max)Operating Temperature (Min)Number of ElementsConfigurationOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)JEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinPower Dissipation-Max (Abs)RoHS StatusSupplier Device PackageOperating TemperaturePower Dissipation-MaxDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Factory Lead TimeMountNumber of PinsTerminationResistanceVoltage - Rated DCCurrent RatingElement ConfigurationPower DissipationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningLead FreePulsed Drain Current-Max (IDM)View Compare
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IRLML2803TRSurface MountTO-236-3, SC-59, SOT-23-3YESSILICONCut Tape (CT)HEXFET®2003e3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)HIGH RELIABILITY8541.21.00.95FET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G3Not Qualified150°C-55°C1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEN-ChannelSWITCHING250m Ω @ 910mA, 10V1V @ 250μA85pF @ 25V1.2A Ta5nC @ 10V30VTO-236AB1.2A0.25Ohm30V0.54WNon-RoHS Compliant-------------------------------- -
Surface MountSOT-23-6--Cut Tape (CT)HEXFET®2003-Obsolete1 (Unlimited)------MOSFET (Metal Oxide)-----------P-Channel-42mOhm @ 5.5A, 4.5V600mV @ 250μA1820pF @ 10V5.5A Ta33nC @ 5V12V-----Non-RoHS CompliantMicro6™(TSOP-6)-55°C~150°C TJ1.7W Ta2.5V 4.5V±12V--------------------------
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Surface MountSOT-23-6-SILICONTape & Reel (TR)HEXFET®1997e3Not For New Designs1 (Unlimited)6EAR99Matte Tin (Sn)ULTRA LOW RESISTANCE--MOSFET (Metal Oxide)DUALGULL WING------1-ENHANCEMENT MODEP-ChannelSWITCHING180m Ω @ 1.6A, 10V1V @ 250μA170pF @ 25V2.4A Ta11nC @ 10V30V-2.4A---ROHS3 Compliant--55°C~150°C TJ1.7W Ta4.5V 10V±20V7 WeeksSurface Mount6SMD/SMT180mOhm-30V-2.3ASingle1.7W10 ns12ns8.4 ns20 ns-2.3A-1V20V-30V-30V-1 V1.4478mm2.9972mm1.75mmNo SVHCNoLead Free-
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Surface MountTO-236-3, SC-59, SOT-23-3YESSILICONTubeHEXFET®2003e3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)--Other TransistorsMOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G3Not Qualified150°C-1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEP-ChannelSWITCHING98m Ω @ 3A, 10V2.5V @ 250μA510pF @ 25V3A Ta14nC @ 10V30V-3A0.098Ohm30V-Non-RoHS Compliant--1.25W Ta4.5V 10V±20V-------------------------24A
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