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IRLML2502TR

Infineon Technologies IRLML2502TR

Part Number:
IRLML2502TR
Manufacturer:
Infineon Technologies
Ventron No:
2492440-IRLML2502TR
Description:
MOSFET N-CH 20V 4.2A SOT-23
ECAD Model:
Datasheet:
IRLML2502TR

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Specifications
Infineon Technologies IRLML2502TR technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLML2502TR.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Packaging
    Cut Tape (CT)
  • Series
    HEXFET®
  • Published
    2003
  • JESD-609 Code
    e3
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PDSO-G3
  • Qualification Status
    Not Qualified
  • Operating Temperature (Max)
    150°C
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode
    ENHANCEMENT MODE
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    45m Ω @ 4.2A, 4.5V
  • Vgs(th) (Max) @ Id
    1.2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    740pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    4.2A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    12nC @ 5V
  • Drain to Source Voltage (Vdss)
    20V
  • JEDEC-95 Code
    TO-236AB
  • Drain Current-Max (Abs) (ID)
    4.2A
  • Drain-source On Resistance-Max
    0.045Ohm
  • Pulsed Drain Current-Max (IDM)
    33A
  • DS Breakdown Voltage-Min
    20V
  • Power Dissipation-Max (Abs)
    1.25W
  • RoHS Status
    Non-RoHS Compliant
Description
IRLML2502TR Description
International Rectifier's N-Channel MOSFETs use innovative processing techniques to achieve extraordinarily low on-resistance per silicon area. This benefit, when paired with the high switching speed and ruggedized device design of HEXFET Power MOSFETs, gives the designer an exceptionally efficient and reliable device for battery and load control.

IRLML2502TR Features
Ultra Low On-Resistance
N-Channel MOSFET
SOT-23 Footprint
Low Profile (<1.1mm)
Available in Tape and Reel
Fast Switching

IRLML2502TR Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
IRLML2502TR More Descriptions
MOSFET, 20V, 4.2A, 45 mOhm, 8 nC Qg, Logic Level, SOT-23
Single N-Channel 20 V 0.08 Ohm 12 nC 1.25 W Silicon SMT Mosfet - SOT-23
20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package
Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-3
Product Comparison
The three parts on the right have similar specifications to IRLML2502TR.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Operating Temperature (Max)
    Number of Elements
    Configuration
    Operating Mode
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Power Dissipation-Max (Abs)
    RoHS Status
    Mount
    Number of Pins
    Max Operating Temperature
    Min Operating Temperature
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    Rise Time
    Polarity/Channel Type
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    FET Technology
    Drain to Source Resistance
    Rds On Max
    Capacitance - Input
    Height
    Length
    Width
    Radiation Hardening
    Factory Lead Time
    Operating Temperature
    Resistance
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Lead Free
    View Compare
  • IRLML2502TR
    IRLML2502TR
    Infineon Technologies
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    Cut Tape (CT)
    HEXFET®
    2003
    e3
    Discontinued
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    30
    R-PDSO-G3
    Not Qualified
    150°C
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    45m Ω @ 4.2A, 4.5V
    1.2V @ 250μA
    740pF @ 15V
    4.2A Ta
    12nC @ 5V
    20V
    TO-236AB
    4.2A
    0.045Ohm
    33A
    20V
    1.25W
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLML5103GTRPBF
    IRLML5103GTRPBF
    Infineon Technologies
    -
    SOT-23
    -
    -
    -
    -
    -
    e3
    -
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    Other Transistors
    -
    DUAL
    GULL WING
    -
    -
    -
    -
    -
    1
    -
    ENHANCEMENT MODE
    -
    SWITCHING
    -
    -
    -
    -
    -
    30V
    -
    0.76A
    -
    -
    -
    -
    RoHS Compliant
    Surface Mount
    3
    150°C
    -55°C
    540mW
    Single
    540mW
    10 ns
    8.2ns
    P-CHANNEL
    16 ns
    23 ns
    760mA
    20V
    -30V
    METAL-OXIDE SEMICONDUCTOR
    600mOhm
    600 mΩ
    75pF
    1.016mm
    3.0226mm
    1.397mm
    No
    -
    -
    -
    -
    -
    -
    IRLML2502TR vs IRLML5103GTRPBF
  • IRLML2502GTRPBF
    IRLML2502GTRPBF
    Infineon Technologies
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    SILICON
    Tape & Reel (TR)
    HEXFET®
    2008
    e3
    Discontinued
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    -
    -
    -
    -
    1
    -
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    45m Ω @ 4.2A, 4.5V
    1.2V @ 250μA
    740pF @ 15V
    4.2A Ta
    12nC @ 5V
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Surface Mount
    3
    -
    -
    1.25W Ta
    Single
    1.25W
    7.5 ns
    10ns
    -
    26 ns
    54 ns
    4.2A
    12V
    20V
    -
    -
    -
    -
    1.016mm
    3.0226mm
    1.397mm
    No
    10 Weeks
    -55°C~150°C TJ
    45MOhm
    2.5V 4.5V
    ±12V
    Lead Free
    IRLML2502TR vs IRLML2502GTRPBF
  • IRLML5203
    IRLML5203
    Infineon Technologies
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    Tube
    HEXFET®
    2003
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    -
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    R-PDSO-G3
    Not Qualified
    150°C
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    P-Channel
    SWITCHING
    98m Ω @ 3A, 10V
    2.5V @ 250μA
    510pF @ 25V
    3A Ta
    14nC @ 10V
    30V
    -
    3A
    0.098Ohm
    24A
    30V
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    1.25W Ta
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    4.5V 10V
    ±20V
    -
    IRLML2502TR vs IRLML5203
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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