IRLML2402TR

Infineon Technologies IRLML2402TR

Part Number:
IRLML2402TR
Manufacturer:
Infineon Technologies
Ventron No:
3071542-IRLML2402TR
Description:
MOSFET N-CH 20V 1.2A SOT-23
ECAD Model:
Datasheet:
IRLML2402

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Specifications
Infineon Technologies IRLML2402TR technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLML2402TR.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Packaging
    Cut Tape (CT)
  • Series
    HEXFET®
  • Published
    2003
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    HIGH RELIABILITY
  • HTS Code
    8541.29.00.95
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PDSO-G3
  • Qualification Status
    Not Qualified
  • Operating Temperature (Max)
    150°C
  • Operating Temperature (Min)
    -55°C
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode
    ENHANCEMENT MODE
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    250m Ω @ 930mA, 4.5V
  • Vgs(th) (Max) @ Id
    700mV @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    110pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    1.2A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    3.9nC @ 4.5V
  • Drain to Source Voltage (Vdss)
    20V
  • JEDEC-95 Code
    TO-236AB
  • Drain Current-Max (Abs) (ID)
    1.2A
  • Drain-source On Resistance-Max
    0.25Ohm
  • DS Breakdown Voltage-Min
    20V
  • Power Dissipation-Max (Abs)
    0.54W
  • RoHS Status
    Non-RoHS Compliant
Description
IRLML2402TR Description
The IRLML2402PBF is an N-channel HEXFET? Power MOSFET with lower switch losses and increased reliability. The Infineon IRLML2402PBF utilizes advanced processing techniques to achieve extremely low on-resistant per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

IRLML2402TR Features
Industry-standard pinout
MSL1, Consumer qualification
Low profile (<1.1mm)
Fast switching speed
Ultra-low on resistance

IRLML2402TR Applications
DC motor drive
High-efficiency synchronous rectification in SMPS
Uninterruptible power supply
High-speed power switching
Hard switched and high-frequency circuits
IRLML2402TR More Descriptions
20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package
MOSFET, 20V, 1.2A, 250 MOHM, 2.6 NC QG, LOGIC LEVEL, SOTSmall Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO3, 3 PIN
Product Comparison
The three parts on the right have similar specifications to IRLML2402TR.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    HTS Code
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Operating Temperature (Max)
    Operating Temperature (Min)
    Number of Elements
    Configuration
    Operating Mode
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Power Dissipation-Max (Abs)
    RoHS Status
    Mount
    Number of Pins
    Max Operating Temperature
    Min Operating Temperature
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    Rise Time
    Polarity/Channel Type
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    FET Technology
    Drain to Source Resistance
    Rds On Max
    Capacitance - Input
    Height
    Length
    Width
    Radiation Hardening
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    View Compare
  • IRLML2402TR
    IRLML2402TR
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    Cut Tape (CT)
    HEXFET®
    2003
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    8541.29.00.95
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    30
    R-PDSO-G3
    Not Qualified
    150°C
    -55°C
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    250m Ω @ 930mA, 4.5V
    700mV @ 250μA
    110pF @ 15V
    1.2A Ta
    3.9nC @ 4.5V
    20V
    TO-236AB
    1.2A
    0.25Ohm
    20V
    0.54W
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLML5103GTRPBF
    -
    SOT-23
    -
    -
    -
    -
    -
    e3
    -
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    -
    Other Transistors
    -
    DUAL
    GULL WING
    -
    -
    -
    -
    -
    -
    1
    -
    ENHANCEMENT MODE
    -
    SWITCHING
    -
    -
    -
    -
    -
    30V
    -
    0.76A
    -
    -
    -
    RoHS Compliant
    Surface Mount
    3
    150°C
    -55°C
    540mW
    Single
    540mW
    10 ns
    8.2ns
    P-CHANNEL
    16 ns
    23 ns
    760mA
    20V
    -30V
    METAL-OXIDE SEMICONDUCTOR
    600mOhm
    600 mΩ
    75pF
    1.016mm
    3.0226mm
    1.397mm
    No
    -
    -
    -
    -
  • IRLML6402TR
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    Cut Tape (CT)
    HEXFET®
    2003
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    -
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    30
    R-PDSO-G3
    Not Qualified
    150°C
    -
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    P-Channel
    SWITCHING
    65m Ω @ 3.7A, 4.5V
    1.2V @ 250μA
    633pF @ 10V
    3.7A Ta
    12nC @ 5V
    20V
    TO-236AB
    3.7A
    0.065Ohm
    20V
    1.3W
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    22A
    11 mJ
    -
    -
  • IRLML5203
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    Tube
    HEXFET®
    2003
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    -
    -
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    R-PDSO-G3
    Not Qualified
    150°C
    -
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    P-Channel
    SWITCHING
    98m Ω @ 3A, 10V
    2.5V @ 250μA
    510pF @ 25V
    3A Ta
    14nC @ 10V
    30V
    -
    3A
    0.098Ohm
    30V
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    1.25W Ta
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    24A
    -
    4.5V 10V
    ±20V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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