Infineon Technologies IRLML2402TR
- Part Number:
- IRLML2402TR
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3071542-IRLML2402TR
- Description:
- MOSFET N-CH 20V 1.2A SOT-23
- Datasheet:
- IRLML2402
Infineon Technologies IRLML2402TR technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLML2402TR.
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Transistor Element MaterialSILICON
- PackagingCut Tape (CT)
- SeriesHEXFET®
- Published2003
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- HTS Code8541.29.00.95
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PDSO-G3
- Qualification StatusNot Qualified
- Operating Temperature (Max)150°C
- Operating Temperature (Min)-55°C
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Operating ModeENHANCEMENT MODE
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs250m Ω @ 930mA, 4.5V
- Vgs(th) (Max) @ Id700mV @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds110pF @ 15V
- Current - Continuous Drain (Id) @ 25°C1.2A Ta
- Gate Charge (Qg) (Max) @ Vgs3.9nC @ 4.5V
- Drain to Source Voltage (Vdss)20V
- JEDEC-95 CodeTO-236AB
- Drain Current-Max (Abs) (ID)1.2A
- Drain-source On Resistance-Max0.25Ohm
- DS Breakdown Voltage-Min20V
- Power Dissipation-Max (Abs)0.54W
- RoHS StatusNon-RoHS Compliant
IRLML2402TR Description
The IRLML2402PBF is an N-channel HEXFET? Power MOSFET with lower switch losses and increased reliability. The Infineon IRLML2402PBF utilizes advanced processing techniques to achieve extremely low on-resistant per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
IRLML2402TR Features
Industry-standard pinout
MSL1, Consumer qualification
Low profile (<1.1mm)
Fast switching speed
Ultra-low on resistance
IRLML2402TR Applications
DC motor drive
High-efficiency synchronous rectification in SMPS
Uninterruptible power supply
High-speed power switching
Hard switched and high-frequency circuits
The IRLML2402PBF is an N-channel HEXFET? Power MOSFET with lower switch losses and increased reliability. The Infineon IRLML2402PBF utilizes advanced processing techniques to achieve extremely low on-resistant per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
IRLML2402TR Features
Industry-standard pinout
MSL1, Consumer qualification
Low profile (<1.1mm)
Fast switching speed
Ultra-low on resistance
IRLML2402TR Applications
DC motor drive
High-efficiency synchronous rectification in SMPS
Uninterruptible power supply
High-speed power switching
Hard switched and high-frequency circuits
IRLML2402TR More Descriptions
20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package
MOSFET, 20V, 1.2A, 250 MOHM, 2.6 NC QG, LOGIC LEVEL, SOTSmall Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO3, 3 PIN
MOSFET, 20V, 1.2A, 250 MOHM, 2.6 NC QG, LOGIC LEVEL, SOT
The three parts on the right have similar specifications to IRLML2402TR.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialPackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusOperating Temperature (Max)Operating Temperature (Min)Number of ElementsConfigurationOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)JEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinPower Dissipation-Max (Abs)RoHS StatusMountNumber of PinsMax Operating TemperatureMin Operating TemperaturePower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeRise TimePolarity/Channel TypeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageFET TechnologyDrain to Source ResistanceRds On MaxCapacitance - InputHeightLengthWidthRadiation HardeningPulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)View Compare
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IRLML2402TRSurface MountTO-236-3, SC-59, SOT-23-3YESSILICONCut Tape (CT)HEXFET®2003e3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)HIGH RELIABILITY8541.29.00.95FET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING26030R-PDSO-G3Not Qualified150°C-55°C1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEN-ChannelSWITCHING250m Ω @ 930mA, 4.5V700mV @ 250μA110pF @ 15V1.2A Ta3.9nC @ 4.5V20VTO-236AB1.2A0.25Ohm20V0.54WNon-RoHS Compliant----------------------------
-
-SOT-23-----e3-1 (Unlimited)3EAR99Matte Tin (Sn)HIGH RELIABILITY-Other Transistors-DUALGULL WING------1-ENHANCEMENT MODE-SWITCHING-----30V-0.76A---RoHS CompliantSurface Mount3150°C-55°C540mWSingle540mW10 ns8.2nsP-CHANNEL16 ns23 ns760mA20V-30VMETAL-OXIDE SEMICONDUCTOR600mOhm600 mΩ75pF1.016mm3.0226mm1.397mmNo----
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Surface MountTO-236-3, SC-59, SOT-23-3YESSILICONCut Tape (CT)HEXFET®2003e3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)HIGH RELIABILITY-Other TransistorsMOSFET (Metal Oxide)DUALGULL WING26030R-PDSO-G3Not Qualified150°C-1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEP-ChannelSWITCHING65m Ω @ 3.7A, 4.5V1.2V @ 250μA633pF @ 10V3.7A Ta12nC @ 5V20VTO-236AB3.7A0.065Ohm20V1.3WNon-RoHS Compliant-----------------------22A11 mJ--
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Surface MountTO-236-3, SC-59, SOT-23-3YESSILICONTubeHEXFET®2003e3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)--Other TransistorsMOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G3Not Qualified150°C-1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEP-ChannelSWITCHING98m Ω @ 3A, 10V2.5V @ 250μA510pF @ 25V3A Ta14nC @ 10V30V-3A0.098Ohm30V-Non-RoHS Compliant----1.25W Ta------------------24A-4.5V 10V±20V
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