Infineon Technologies IRL540NSTRR
- Part Number:
- IRL540NSTRR
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3586851-IRL540NSTRR
- Description:
- MOSFET N-CH 100V 36A D2PAK
- ECAD Model:
-
- Datasheet:
- IRL540NSTRR
Infineon Technologies IRL540NSTRR technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL540NSTRR.
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published1998
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PSSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max3.8W Ta 140W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs44m Ω @ 18A, 10V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1800pF @ 25V
- Current - Continuous Drain (Id) @ 25°C36A Tc
- Gate Charge (Qg) (Max) @ Vgs74nC @ 5V
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)4V 10V
- Vgs (Max)±16V
- Drain Current-Max (Abs) (ID)36A
- Drain-source On Resistance-Max0.053Ohm
- Pulsed Drain Current-Max (IDM)120A
- DS Breakdown Voltage-Min100V
- Avalanche Energy Rating (Eas)310 mJ
- RoHS StatusNon-RoHS Compliant
IRL540NSTRR Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 310 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1800pF @ 25V.36A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 120A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 100V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 100V.Using drive voltage (4V 10V) reduces this device's overall power consumption.
IRL540NSTRR Features
the avalanche energy rating (Eas) is 310 mJ
based on its rated peak drain current 120A.
a 100V drain to source voltage (Vdss)
IRL540NSTRR Applications
There are a lot of Infineon Technologies
IRL540NSTRR applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 310 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1800pF @ 25V.36A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 120A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 100V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 100V.Using drive voltage (4V 10V) reduces this device's overall power consumption.
IRL540NSTRR Features
the avalanche energy rating (Eas) is 310 mJ
based on its rated peak drain current 120A.
a 100V drain to source voltage (Vdss)
IRL540NSTRR Applications
There are a lot of Infineon Technologies
IRL540NSTRR applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IRL540NSTRR More Descriptions
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
36 A 100 V 0.053 ohm N-CHANNEL Si POWER MOSFET
Power Field-Effect Transistors
36 A 100 V 0.053 ohm N-CHANNEL Si POWER MOSFET
Power Field-Effect Transistors
The three parts on the right have similar specifications to IRL540NSTRR.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusReach Compliance CodeMountNumber of PinsVoltage - Rated DCCurrent RatingPower DissipationRise TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageNominal VgsREACH SVHCLead FreeView Compare
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IRL540NSTRRSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~175°C TJTape & Reel (TR)HEXFET®1998e3Obsolete1 (Unlimited)2EAR99Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITYMOSFET (Metal Oxide)SINGLEGULL WING26030R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE3.8W Ta 140W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING44m Ω @ 18A, 10V2V @ 250μA1800pF @ 25V36A Tc74nC @ 5V100V4V 10V±16V36A0.053Ohm120A100V310 mJNon-RoHS Compliant-------------- -
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~175°C TJTape & Reel (TR)HEXFET®1998e3Obsolete1 (Unlimited)2EAR99Matte Tin (Sn) - with Nickel (Ni) barrierLOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITYMOSFET (Metal Oxide)SINGLEGULL WING26030R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE3.8W Ta 48W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING180m Ω @ 6A, 10V2V @ 250μA440pF @ 25V10A Tc20nC @ 5V100V4V 10V±16V10A0.22Ohm35A100V85 mJNon-RoHS Compliantnot_compliant------------
-
Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA---55°C~175°C TJTubeHEXFET®2004-Obsolete1 (Unlimited)-EAR99--MOSFET (Metal Oxide)------1-3.8W Ta 140W Tc--N-Channel-44m Ω @ 18A, 10V2V @ 250μA1800pF @ 25V36A Tc74nC @ 5V-4V 10V±16V-----RoHS Compliant-Through Hole3100V36A140W81ns36A16V100V2 VNo SVHCLead Free
-
Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA---55°C~175°C TJTubeHEXFET®1998-Obsolete1 (Unlimited)----MOSFET (Metal Oxide)--NOT SPECIFIEDNOT SPECIFIED----3.8W Ta 48W Tc--N-Channel-180m Ω @ 6A, 10V2V @ 250μA440pF @ 25V10A Tc20nC @ 5V100V4V 10V±16V-----Non-RoHS Compliant-------------
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