IRL540

Vishay Siliconix IRL540

Part Number:
IRL540
Manufacturer:
Vishay Siliconix
Ventron No:
3586581-IRL540
Description:
MOSFET N-CH 100V 28A TO-220AB
ECAD Model:
Datasheet:
IRL540

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Specifications
Vishay Siliconix IRL540 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRL540.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Supplier Device Package
    TO-220AB
  • Weight
    6.000006g
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    2011
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    150W Tc
  • Element Configuration
    Single
  • Power Dissipation
    150W
  • Turn On Delay Time
    8.5 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    77mOhm @ 17A, 5V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2200pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    28A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    64nC @ 5V
  • Rise Time
    170ns
  • Drain to Source Voltage (Vdss)
    100V
  • Drive Voltage (Max Rds On,Min Rds On)
    4V 5V
  • Vgs (Max)
    ±10V
  • Fall Time (Typ)
    80 ns
  • Turn-Off Delay Time
    35 ns
  • Continuous Drain Current (ID)
    28A
  • Gate to Source Voltage (Vgs)
    10V
  • Drain to Source Breakdown Voltage
    100V
  • Input Capacitance
    2.2nF
  • Drain to Source Resistance
    77mOhm
  • Rds On Max
    77 mΩ
  • Height
    8.76mm
  • Length
    10.54mm
  • Width
    4.7mm
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
IRL540 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2200pF @ 25V.This device conducts a continuous drain current (ID) of 28A, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 35 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 77mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8.5 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 10V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 4V 5V volts (4V 5V).

IRL540 Features
a continuous drain current (ID) of 28A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 35 ns
single MOSFETs transistor is 77mOhm
a 100V drain to source voltage (Vdss)


IRL540 Applications
There are a lot of Vishay Siliconix
IRL540 applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IRL540 More Descriptions
Trans MOSFET N-CH 100V 28A 3-Pin(3 Tab) TO-220
100V 28.000A TO-220
Product Comparison
The three parts on the right have similar specifications to IRL540.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Transistor Element Material
    Number of Terminations
    ECCN Code
    Additional Feature
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Operating Mode
    Case Connection
    Transistor Application
    JEDEC-95 Code
    Drain-source On Resistance-Max
    Series
    View Compare
  • IRL540
    IRL540
    Through Hole
    Through Hole
    TO-220-3
    TO-220AB
    6.000006g
    -55°C~175°C TJ
    Tube
    2011
    Obsolete
    1 (Unlimited)
    175°C
    -55°C
    MOSFET (Metal Oxide)
    1
    1
    150W Tc
    Single
    150W
    8.5 ns
    N-Channel
    77mOhm @ 17A, 5V
    2V @ 250μA
    2200pF @ 25V
    28A Tc
    64nC @ 5V
    170ns
    100V
    4V 5V
    ±10V
    80 ns
    35 ns
    28A
    10V
    100V
    2.2nF
    77mOhm
    77 mΩ
    8.76mm
    10.54mm
    4.7mm
    No
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRL510L
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    6.000006g
    -55°C~175°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    1
    1
    -
    Single
    -
    9.3 ns
    N-Channel
    540m Ω @ 3.4A, 5V
    2V @ 250μA
    250pF @ 25V
    5.6A Tc
    6.1nC @ 5V
    47ns
    -
    4V 5V
    ±10V
    18 ns
    16 ns
    5.6A
    10V
    100V
    -
    -
    -
    9.01mm
    10.41mm
    4.7mm
    -
    Non-RoHS Compliant
    SILICON
    3
    EAR99
    LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY
    3.7W
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSFM-T3
    Not Qualified
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    TO-220AB
    0.54Ohm
    -
  • IRL530L
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    TO-262-3
    -
    -55°C~175°C TJ
    Tube
    1997
    Active
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    N-Channel
    160mOhm @ 9A, 5V
    2V @ 250μA
    930pF @ 25V
    15A Tc
    28nC @ 5V
    -
    100V
    4V 5V
    ±10V
    -
    -
    15A
    -
    -
    930pF
    -
    160 mΩ
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    88W
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRL520NL
    -
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    -
    -55°C~175°C TJ
    Tube
    1998
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    3.8W Ta 48W Tc
    -
    -
    -
    N-Channel
    180m Ω @ 6A, 10V
    2V @ 250μA
    440pF @ 25V
    10A Tc
    20nC @ 5V
    -
    100V
    4V 10V
    ±16V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    -
    -
    -
    -
    HEXFET®
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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