Vishay Siliconix IRL540
- Part Number:
- IRL540
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3586581-IRL540
- Description:
- MOSFET N-CH 100V 28A TO-220AB
- Datasheet:
- IRL540
Vishay Siliconix IRL540 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRL540.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Supplier Device PackageTO-220AB
- Weight6.000006g
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2011
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max150W Tc
- Element ConfigurationSingle
- Power Dissipation150W
- Turn On Delay Time8.5 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs77mOhm @ 17A, 5V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2200pF @ 25V
- Current - Continuous Drain (Id) @ 25°C28A Tc
- Gate Charge (Qg) (Max) @ Vgs64nC @ 5V
- Rise Time170ns
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)4V 5V
- Vgs (Max)±10V
- Fall Time (Typ)80 ns
- Turn-Off Delay Time35 ns
- Continuous Drain Current (ID)28A
- Gate to Source Voltage (Vgs)10V
- Drain to Source Breakdown Voltage100V
- Input Capacitance2.2nF
- Drain to Source Resistance77mOhm
- Rds On Max77 mΩ
- Height8.76mm
- Length10.54mm
- Width4.7mm
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
IRL540 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2200pF @ 25V.This device conducts a continuous drain current (ID) of 28A, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 35 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 77mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8.5 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 10V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 4V 5V volts (4V 5V).
IRL540 Features
a continuous drain current (ID) of 28A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 35 ns
single MOSFETs transistor is 77mOhm
a 100V drain to source voltage (Vdss)
IRL540 Applications
There are a lot of Vishay Siliconix
IRL540 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2200pF @ 25V.This device conducts a continuous drain current (ID) of 28A, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 35 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 77mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8.5 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 10V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 4V 5V volts (4V 5V).
IRL540 Features
a continuous drain current (ID) of 28A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 35 ns
single MOSFETs transistor is 77mOhm
a 100V drain to source voltage (Vdss)
IRL540 Applications
There are a lot of Vishay Siliconix
IRL540 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IRL540 More Descriptions
Trans MOSFET N-CH 100V 28A 3-Pin(3 Tab) TO-220
100V 28.000A TO-220
100V 28.000A TO-220
The three parts on the right have similar specifications to IRL540.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRadiation HardeningRoHS StatusTransistor Element MaterialNumber of TerminationsECCN CodeAdditional FeatureMax Power DissipationPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusOperating ModeCase ConnectionTransistor ApplicationJEDEC-95 CodeDrain-source On Resistance-MaxSeriesView Compare
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IRL540Through HoleThrough HoleTO-220-3TO-220AB6.000006g-55°C~175°C TJTube2011Obsolete1 (Unlimited)175°C-55°CMOSFET (Metal Oxide)11150W TcSingle150W8.5 nsN-Channel77mOhm @ 17A, 5V2V @ 250μA2200pF @ 25V28A Tc64nC @ 5V170ns100V4V 5V±10V80 ns35 ns28A10V100V2.2nF77mOhm77 mΩ8.76mm10.54mm4.7mmNoNon-RoHS Compliant----------------
-
Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA-6.000006g-55°C~175°C TJTube2016Obsolete1 (Unlimited)--MOSFET (Metal Oxide)11-Single-9.3 nsN-Channel540m Ω @ 3.4A, 5V2V @ 250μA250pF @ 25V5.6A Tc6.1nC @ 5V47ns-4V 5V±10V18 ns16 ns5.6A10V100V---9.01mm10.41mm4.7mm-Non-RoHS CompliantSILICON3EAR99LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY3.7WNOT SPECIFIEDNOT SPECIFIEDR-PSFM-T3Not QualifiedENHANCEMENT MODEDRAINSWITCHINGTO-220AB0.54Ohm-
-
Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AATO-262-3--55°C~175°C TJTube1997Active1 (Unlimited)--MOSFET (Metal Oxide)------N-Channel160mOhm @ 9A, 5V2V @ 250μA930pF @ 25V15A Tc28nC @ 5V-100V4V 5V±10V--15A--930pF-160 mΩ----Non-RoHS Compliant----88W----------
-
-Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA---55°C~175°C TJTube1998Obsolete1 (Unlimited)--MOSFET (Metal Oxide)--3.8W Ta 48W Tc---N-Channel180m Ω @ 6A, 10V2V @ 250μA440pF @ 25V10A Tc20nC @ 5V-100V4V 10V±16V------------Non-RoHS Compliant-----NOT SPECIFIEDNOT SPECIFIED-------HEXFET®
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