Infineon Technologies IRL530NPBF

Name: IRL530NPBF
Brand: Infineon Technologies
SKU: 2483053-IRL530NPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRL530NPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2483053-IRL530NPBF

Description:: MOSFET N-CH 100V 17A TO-220AB

ECAD Model:

Datasheet:: IRL530NPBF

Specifications

Infineon Technologies IRL530NPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL530NPBF.

Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
1998
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
100mOhm
Terminal Finish
MATTE TIN OVER NICKEL
Additional Feature
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY
Subcategory
FET General Purpose Power
Voltage - Rated DC
100V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
260
Current Rating
17A
Time@Peak Reflow Temperature-Max (s)
30
Lead Pitch
2.54mm
Number of Elements
1
Power Dissipation-Max
79W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
79W
Case Connection
DRAIN
Turn On Delay Time
7.2 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
100m Ω @ 9A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
800pF @ 25V
Current - Continuous Drain (Id) @ 25°C
17A Tc
Gate Charge (Qg) (Max) @ Vgs
34nC @ 5V
Rise Time
53ns
Drive Voltage (Max Rds On,Min Rds On)
4V 10V
Vgs (Max)
±16V
Fall Time (Typ)
26 ns
Turn-Off Delay Time
30 ns
Continuous Drain Current (ID)
17A
Threshold Voltage
2V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
16V
Drain to Source Breakdown Voltage
100V
Pulsed Drain Current-Max (IDM)
60A
Dual Supply Voltage
100V
Recovery Time
210 ns
Nominal Vgs
2 V
Height
8.77mm
Length
10.5156mm
Width
4.69mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead, Lead Free

Description

IRL530NPBF Description
The IRL530NPBF is a 100V single N-channel HEXFET? Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The Operating and Storage Temperature Range is between -55 and 175℃. And the Transistor IRL530NPBF is in the TO-220-3 package with 79W power dissipation.

IRL530NPBF Features
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100kHz
Industry-standard through-hole power package
High-current rating

IRL530NPBF Applications
DC motors
Inverters
SMPS
Lighting
Load switches
Battery-powered applications

IRL530NPBF More Descriptions

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.1Ohm;ID 17A;TO-220AB;PD 79W;VGS /-16V
Transistor IRL530N N-Channel MOSFET 100V 12A TO-220
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Single N-Channel 100 V 0.15 Ohm 34 nC HEXFET® Power Mosfet - TO-220-3
Trans MOSFET N-CH 100V 17A 3-Pin(3 Tab) TO-220AB Tube
MOSFET Transistor, N-Channel, TO-220AB
Power Field-Effect Transistor, 17A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
MOSFET, N, LOGIC, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:100V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:63W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:17A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:63W; Power Dissipation Pd:63W; Pulse Current Idm:60A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 17 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 100 / Gate-Source Voltage V = 16 / Fall Time ns = 26 / Rise Time ns = 53 / Turn-OFF Delay Time ns = 30 / Turn-ON Delay Time ns = 7.2 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220AB / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 79

Product Comparison

The three parts on the right have similar specifications to IRL530NPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Lead Pitch

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Dual Supply Voltage

Recovery Time

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Terminal Position

Terminal Form

JESD-30 Code

Qualification Status

Configuration

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

View Compare
IRL530NPBF

Infineon Technologies

12 Weeks

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~175°C TJ

Tube

HEXFET®

1998

e3

Active

1 (Unlimited)

3

EAR99

100mOhm

MATTE TIN OVER NICKEL

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY

FET General Purpose Power

100V

MOSFET (Metal Oxide)

260

17A

30

2.54mm

1

79W Tc

Single

ENHANCEMENT MODE

79W

DRAIN

7.2 ns

N-Channel

SWITCHING

100m Ω @ 9A, 10V

2V @ 250μA

800pF @ 25V

17A Tc

34nC @ 5V

53ns

4V 10V

±16V

26 ns

30 ns

17A

2V

TO-220AB

16V

100V

60A

100V

210 ns

2 V

8.77mm

10.5156mm

4.69mm

No SVHC

No

ROHS3 Compliant

Contains Lead, Lead Free

-

-

-

-

-

-

-

-

-

-

-

-
IRL540NSTRR

Infineon Technologies

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

1998

e3

Obsolete

1 (Unlimited)

2

EAR99

-

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, HIGH RELIABILITY

-

-

MOSFET (Metal Oxide)

260

-

30

-

1

3.8W Ta 140W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

44m Ω @ 18A, 10V

2V @ 250μA

1800pF @ 25V

36A Tc

74nC @ 5V

-

4V 10V

±16V

-

-

-

-

-

-

-

120A

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

YES

SINGLE

GULL WING

R-PSSO-G2

Not Qualified

SINGLE WITH BUILT-IN DIODE

100V

36A

0.053Ohm

100V

310 mJ

IRL530NPBF vs IRL540NSTRR
IRL520NL

Infineon Technologies

-

-

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

-

-55°C~175°C TJ

Tube

HEXFET®

1998

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

MOSFET (Metal Oxide)

NOT SPECIFIED

-

NOT SPECIFIED

-

-

3.8W Ta 48W Tc

-

-

-

-

-

N-Channel

-

180m Ω @ 6A, 10V

2V @ 250μA

440pF @ 25V

10A Tc

20nC @ 5V

-

4V 10V

±16V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

-

-

100V

-

-

-

-

IRL530NPBF vs IRL520NL
IRL520NS

Infineon Technologies

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

SILICON

-55°C~175°C TJ

Tube

HEXFET®

1998

-

Obsolete

1 (Unlimited)

2

-

-

-

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY

-

-

MOSFET (Metal Oxide)

NOT SPECIFIED

-

NOT SPECIFIED

-

1

3.8W Ta 48W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

180m Ω @ 6A, 10V

2V @ 250μA

440pF @ 25V

10A Tc

20nC @ 5V

-

4V 10V

±16V

-

-

-

-

-

-

-

35A

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

YES

SINGLE

GULL WING

R-PSSO-G2

-

SINGLE WITH BUILT-IN DIODE

100V

10A

0.22Ohm

100V

85 mJ

IRL530NPBF vs IRL520NS

Certification

Related parts for IRL530NPBF

IRL540NSTRRPBF

Infineon Technologies

MOSFET N-CH 100V 36A D2PAK
IRL520NSTRL

Infineon Technologies

MOSFET N-CH 100V 10A D2PAK
IRL540NSTRR

Infineon Technologies

MOSFET N-CH 100V 36A D2PAK
IRL530S

Vishay Siliconix

MOSFET N-CH 100V 15A D2PAK
IRL540

Vishay Siliconix

MOSFET N-CH 100V 28A TO-220AB
IRL510L

Vishay Siliconix

MOSFET N-CH 100V 5.6A TO-262
IRL530L

Vishay Siliconix

MOSFET N-CH 100V 15A TO-262
IRL540NLPBF

Infineon Technologies

MOSFET N-CH 100V 36A TO-262
IRL520NL

Infineon Technologies

MOSFET N-CH 100V 10A TO-262
IRL520NS

Infineon Technologies

MOSFET N-CH 100V 10A D2PAK

Popular Search Part Number Related Keywords Search Tags

IRL530NPBF Price
IRL530NPBF Picture
IRL530NPBF Buy
IRL530NPBF Distributor
IRL530NPBF Image
IRL530NPBF Inquiry
IRL530NPBF Manufacturer
IRL530NPBF Part
IRL530NPBF Description
IRL530NPBF Technical Data
IRL530NPBF Stock
IRL530NPBF Wholesales
IRL530NPBF PDF
IRL530NPBF Inventory
IRL530NPBF Supplier
IRL530NPBF Datasheet
IRL530NPBF Rfq
IRL530NPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRL530NPBF DISTI #IRL530NPBF	Infineon Technologies AG	Trans MOSFET N-CH 100V 17A 3-Pin(3 Tab) TO-220AB T RoHS: Compliant	2000	1 $0.869 10 $0.6749 100 $0.4981 500 $0.4758 1000 $0.3973 2000 $0.3663
IRL530NPBF DISTI #IRL530NPBF	Infineon Technologies AG	MOSFET N-CH 100V 17A TO-220AB RoHS: Compliant	1646	1 $1.16 10 $1.023 100 $0.8085 500 $0.627 1000 $0.495
IRL530NPBF DISTI #IRL530NPBF	Infineon Technologies AG	Trans MOSFET N-CH 100V 17A 3-Pin(3 Tab) TO-220AB T RoHS: Compliant	3036	33 $0.3114
IRL530NPBF DISTI #IRL530NPBF	Infineon Technologies AG	Trans MOSFET N-CH 100V 17A 3-Pin(3 Tab) TO-220AB T RoHS: Compliant	2000	19 $0.7574 100 $0.6024 500 $0.5396 1000 $0.3997 2000 $0.3664
IRL530NPBF DISTI #IRL530NPBF	Infineon Technologies AG	Trans MOSFET N-CH 100V 17A 3-Pin(3 Tab) TO-220AB - RoHS: Compliant	1	1 $0.5879 10 $0.5339 25 $0.5329 50 $0.5319 100 $0.4589 500 $0.4169 1000 $0.3489
IRL530NPBF DISTI #IRL530NPBF	Infineon Technologies AG	Trans MOSFET N-CH 100V 17A 3-Pin(3 Tab) TO-220AB ( RoHS: Compliant	15539	1 $0.5959 10 $0.5409 25 $0.5389 50 $0.5379 100 $0.4629 500 $0.4209 1000 $0.3439
IRL530NPBF DISTI #IRL530NPBF	Infineon Technologies AG	Trans MOSFET N-CH 100V 17A 3-Pin(3 Tab) TO-220AB ( RoHS: Compliant	0
IRL530NPBF DISTI #IRL530NPBF	Infineon Technologies AG	N CHANNEL MOSFET, 100V, 17A, TO-220AB, Transistor	831	1 $1.03 10 $0.884 100 $0.695 500 $0.622 1000 $0.504 2500 $0.455 10000 $0.441
IRL530NPBF. DISTI #IRL530NPBF.	Infineon Technologies AG	N CHANNEL MOSFET, 100V, 17A, TO-220AB, Transistor	0	1 $1.03 10 $0.884 100 $0.695 500 $0.622 1000 $0.504 2500 $0.455 10000 $0.441
IRL530NPBF DISTI #IRL530NPBF	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 100V, RDS(ON) 0.1Ohm RoHS: Compliant	168	1 $1.079 10 $0.952 100 $0.83 500 $0.719 1000 $0.635
IRL530NPBF DISTI #IRL530NPBF	Infineon Technologies AG	MOSFET MOSFT 17A 22.7nC 100mOhm LogLvAB RoHS: Compliant	6050	1 $0.99 10 $0.84 100 $0.646 500 $0.571 1000 $0.45
IRL530NPBF DISTI #IRL530NPBF	Infineon Technologies AG	Single N-Channel 100 V 0.15 Ohm 34 nC HEXFET Power RoHS: Compliant	18630	25 $0.48 300 $0.43 1250 $0.38
IRL530NPBF DISTI #IRL530NPBF	International Rectifier	Power Field-Effect Transistor, 17A I(D), 100V, 0.1 RoHS: Compliant	5341	1 $0.49 25 $0.45 100 $0.43 500 $0.42 1000 $0.4
IRL530NPBF DISTI #IRL530NPBF	Infineon Technologies AG	MOSFET N-CH 100V 17A LOGICFET TO220AB, EA	1052	1 $2 20 $0.48 25 $0.44
IRL530NPBF DISTI #IRL530NPBF	Infineon Technologies AG	Transistor: N-MOSFET, unipolar, 100V, 17A, 79W	133	1 $0.6689 3 $0.5797 10 $0.4758 50 $0.4132
IRL530NPBF DISTI #IRL530NPBF	Infineon Technologies AG	N-LogL 100V 17A 79W 0,1R TO220AB RoHS: Compliant	4150	10 $0.606 50 $0.366 200 $0.306 500 $0.295
IRL530NPBF DISTI #IRL530NPBF	Infineon Technologies AG	N-CH 100V 17A 100mOhm TO220-3 RoHS: Compliant	0	50 $0.519 150 $0.4886 300 $0.459 750 $0.4146 1700 $0.3997
IRL530NPBF DISTI #IRL530NPBF	Infineon Technologies AG	MOSFET, N, LOGIC, TO-220 RoHS: Compliant	776	1 $1.57 10 $1.34 100 $1.03 500 $0.903 1000 $0.712 2000 $0.632
IRL530NPBF DISTI #IRL530NPBF	Infineon Technologies AG	MOSFET, N, LOGIC, TO-220 RoHS: Compliant	922	5 $0.49 25 $0.449 100 $0.443 250 $0.436 500 $0.367
IRL530NPBF DISTI #IRL530NPBF	Infineon Technologies AG	Trans MOSFET N-CH 100V 17A 3-Pin(3 Tab) TO-220AB T RoHS: Compliant	2000	10 $0.7574 100 $0.6024 500 $0.5396 1000 $0.3997
IRL530NPBF DISTI #IRL530NPBF	Infineon Technologies AG	Trans MOSFET N-CH 100V 17A 3-Pin(3 Tab) TO-220AB T RoHS: Compliant	160	5 $0.712 10 $0.475 50 $0.393
IRL530NPBF DISTI #IRL530NPBF	Infineon Technologies AG	Trans MOSFET N-CH 100V 17A 3-Pin(3 Tab) TO-220AB T RoHS: Compliant	3047	1 $4.34 10 $1.08 50 $0.789 100 $0.703 500 $0.578 1000 $0.531

IRL530N~~(11)~~
IRL530~~(26)~~
IRL53~~(26)~~
IRL5~~(67)~~
IRL~~(58)~~

Infineon Technologies IRL530NPBF

Quick Request Quote

All You Need to Know About MPS2222A

A4988 Characteristics, Application and Basic Principle

What Is The Difference Between NE5532 And RC4558D?

TPC8129 Internal Circuit, Specifications, Application and Marking