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IRGS4610DTRRPBF

Infineon Technologies IRGS4610DTRRPBF

Part Number:
IRGS4610DTRRPBF
Manufacturer:
Infineon Technologies
Ventron No:
2497133-IRGS4610DTRRPBF
Description:
IGBT 600V 16A 77W D2PAK
ECAD Model:
Datasheet:
IRGx4610DPBF

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Specifications
Infineon Technologies IRGS4610DTRRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRGS4610DTRRPBF.
  • Factory Lead Time
    20 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Weight
    260.39037mg
  • Operating Temperature
    -40°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2014
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    77W
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Element Configuration
    Single
  • Input Type
    Standard
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    2V
  • Max Collector Current
    10A
  • Reverse Recovery Time
    74 ns
  • Collector Emitter Breakdown Voltage
    600V
  • Current - Collector (Ic) (Max)
    16A
  • Collector Emitter Saturation Voltage
    2.14V
  • Test Condition
    400V, 6A, 47 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2V @ 15V, 6A
  • Gate Charge
    13nC
  • Current - Collector Pulsed (Icm)
    18A
  • Td (on/off) @ 25°C
    27ns/75ns
  • Switching Energy
    56μJ (on), 122μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    6.5V
  • RoHS Status
    RoHS Compliant
Description
IRGS4610DTRRPBF Description
IRGS4610DTRRPBF is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode manufactured by Infineon Technologies to provide high efficiency in motor drive applications. Due to its low VCE(ON) and switching losses, it is able to provide high efficiency in a wide range of applications and switching frequencies. Moreover, excellent current sharing can be delivered in parallel operation due to its positive VCE(ON) temperature coefficient and tighter distribution of parameters. Improved reliability can be ensured due to rugged hard switching performance and higher power capability.

IRGS4610DTRRPBF Features
Improved reliability Low VCE(ON) and switching losses Positive VCE(ON) temperature coefficient Tighter distribution of parameters Package: D2-Pak

IRGS4610DTRRPBF Applications
Appliance drives Inverters UPS
IRGS4610DTRRPBF More Descriptions
Target Applications: Fan; Lighting HID; Pump; Refridgeration; Solar
IGBT Transistors 600V TRENCH IGBT ULTRAFAST
Igbt, Single, 600V, 16A, To-263-3
CAP CER 3300PF 100V X7R RADIAL
Product Comparison
The three parts on the right have similar specifications to IRGS4610DTRRPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Terminal Finish
    Subcategory
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Element Configuration
    Input Type
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Collector Emitter Breakdown Voltage
    Current - Collector (Ic) (Max)
    Collector Emitter Saturation Voltage
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    RoHS Status
    Transistor Element Material
    Number of Terminations
    Terminal Form
    Base Part Number
    JESD-30 Code
    Number of Elements
    Case Connection
    Power - Max
    Transistor Application
    Max Breakdown Voltage
    Turn On Time
    Turn Off Time-Nom (toff)
    IGBT Type
    Fall Time-Max (tf)
    Radiation Hardening
    Power Dissipation
    Height
    Length
    Width
    View Compare
  • IRGS4610DTRRPBF
    IRGS4610DTRRPBF
    Infineon Technologies
    20 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    260.39037mg
    -40°C~175°C TJ
    Tape & Reel (TR)
    2014
    e3
    Obsolete
    1 (Unlimited)
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    Insulated Gate BIP Transistors
    77W
    260
    30
    Single
    Standard
    N-CHANNEL
    2V
    10A
    74 ns
    600V
    16A
    2.14V
    400V, 6A, 47 Ω, 15V
    2V @ 15V, 6A
    13nC
    18A
    27ns/75ns
    56μJ (on), 122μJ (off)
    20V
    6.5V
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRGS30B60KTRRP
    IRGS30B60KTRRP
    Infineon Technologies
    9 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    260.39037mg
    -55°C~175°C TJ
    Tape & Reel (TR)
    2005
    e3
    Last Time Buy
    1 (Unlimited)
    -
    Matte Tin (Sn) - with Nickel (Ni) barrier
    Insulated Gate BIP Transistors
    370W
    260
    30
    Single
    Standard
    N-CHANNEL
    2.35V
    78A
    -
    600V
    -
    1.95V
    400V, 30A, 10 Ω, 15V
    2.35V @ 15V, 30A
    102nC
    120A
    46ns/185ns
    350μJ (on), 825μJ (off)
    20V
    5.5V
    ROHS3 Compliant
    SILICON
    2
    GULL WING
    IRGS30B60KPBF
    R-PSSO-G2
    1
    COLLECTOR
    370W
    MOTOR CONTROL
    600V
    74 ns
    237 ns
    NPT
    42ns
    No
    -
    -
    -
    -
    IRGS4610DTRRPBF vs IRGS30B60KTRRP
  • IRGSL30B60KPBF
    IRGSL30B60KPBF
    Infineon Technologies
    11 Weeks
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    3
    2.084002g
    -55°C~175°C TJ
    Tube
    2005
    e3
    Obsolete
    1 (Unlimited)
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    Insulated Gate BIP Transistors
    370W
    260
    30
    Single
    Standard
    N-CHANNEL
    2.35V
    78A
    -
    600V
    -
    2.35V
    400V, 30A, 10 Ω, 15V
    2.35V @ 15V, 30A
    102nC
    120A
    46ns/185ns
    350μJ (on), 825μJ (off)
    20V
    5.5V
    RoHS Compliant
    SILICON
    3
    -
    -
    -
    1
    COLLECTOR
    -
    MOTOR CONTROL
    -
    74 ns
    237 ns
    NPT
    42ns
    No
    370W
    9.652mm
    10.668mm
    4.826mm
    IRGS4610DTRRPBF vs IRGSL30B60KPBF
  • IRGS4B60KD1TRLP
    IRGS4B60KD1TRLP
    Infineon Technologies
    16 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    260.39037mg
    -55°C~175°C TJ
    Tape & Reel (TR)
    2004
    e3
    Obsolete
    1 (Unlimited)
    -
    MATTE TIN
    -
    63W
    -
    -
    Single
    Standard
    N-CHANNEL
    2.5V
    11A
    93 ns
    600V
    -
    -
    400V, 4A, 100 Ω, 15V
    2.5V @ 15V, 4A
    12nC
    22A
    22ns/100ns
    73μJ (on), 47μJ (off)
    -
    -
    RoHS Compliant
    SILICON
    2
    GULL WING
    IRGS4B60KD1PBF
    R-PSSO-G2
    1
    COLLECTOR
    63W
    MOTOR CONTROL
    600V
    40 ns
    199 ns
    NPT
    -
    No
    -
    -
    -
    -
    IRGS4610DTRRPBF vs IRGS4B60KD1TRLP
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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