Vishay Siliconix IRFPG50PBF
- Part Number:
- IRFPG50PBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2479042-IRFPG50PBF
- Description:
- MOSFET N-CH 1000V 6.1A TO-247AC
- ECAD Model:
-
- Datasheet:
- IRFPG50PBF
Vishay Siliconix IRFPG50PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFPG50PBF.
- Factory Lead Time8 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Supplier Device PackageTO-247-3
- Weight38.000013g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2011
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance2Ohm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC1kV
- TechnologyMOSFET (Metal Oxide)
- Current Rating6.1A
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max190W Tc
- Element ConfigurationSingle
- Power Dissipation190W
- Turn On Delay Time19 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs2Ohm @ 3.6A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2800pF @ 25V
- Current - Continuous Drain (Id) @ 25°C6.1A Tc
- Gate Charge (Qg) (Max) @ Vgs190nC @ 10V
- Rise Time35ns
- Drain to Source Voltage (Vdss)1000V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)36 ns
- Turn-Off Delay Time130 ns
- Continuous Drain Current (ID)6.1A
- Threshold Voltage4V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage1kV
- Input Capacitance2.8nF
- Recovery Time950 ns
- Drain to Source Resistance2Ohm
- Rds On Max2 Ω
- Nominal Vgs4 V
- Height20.7mm
- Length15.87mm
- Width5.31mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFPG50PBF Description
The low-voltage, single-supply operation of the OPA340 series rail-to-rail CMOS operational amplifiers has been optimized. They are perfect for driving sampling analog-to-digital (A/D) converters due to their rail-to-rail input and output and high-speed operation. They can also provide I/V conversion at the output of digital-to-analog (D/A) converters and are well suited for general-purpose and audio applications. For design freedom, the single, twin, and quad versions all share the same specs. The input common-mode voltage range of the OPA340 series' devices extends to 500 mV below ground and 500 mV above the positive supply, and they can function on a single source as low as 2.5 V. With a 100-k load, the output voltage swing is within 1 mV of the supply rails.
IRFPG50PBF Features
Dynamic dV/dt rated Repetitive avalanche rated Isolated central mounting hole Fast switching Ease of paralleling Simple drive requirements
IRFPG50PBF Applications
Temperature Measurement Pressure Measurement Flow Meters Factory Automation and Process Control
The low-voltage, single-supply operation of the OPA340 series rail-to-rail CMOS operational amplifiers has been optimized. They are perfect for driving sampling analog-to-digital (A/D) converters due to their rail-to-rail input and output and high-speed operation. They can also provide I/V conversion at the output of digital-to-analog (D/A) converters and are well suited for general-purpose and audio applications. For design freedom, the single, twin, and quad versions all share the same specs. The input common-mode voltage range of the OPA340 series' devices extends to 500 mV below ground and 500 mV above the positive supply, and they can function on a single source as low as 2.5 V. With a 100-k load, the output voltage swing is within 1 mV of the supply rails.
IRFPG50PBF Features
Dynamic dV/dt rated Repetitive avalanche rated Isolated central mounting hole Fast switching Ease of paralleling Simple drive requirements
IRFPG50PBF Applications
Temperature Measurement Pressure Measurement Flow Meters Factory Automation and Process Control
IRFPG50PBF More Descriptions
Trans MOSFET N-CH 1KV 6.1A 3-Pin(3 Tab) TO-247AC / MOSFET N-CH 1000V 6.1A TO-247AC
IRFPG50PBF N-channel MOSFET Transistor, 6.1 A, 1000 V, 3-Pin TO-247AC | Siliconix / Vishay IRFPG50PBF
Power Field-Effect Transistor, 6.1A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
N CHANNEL MOSFET, 1KV, 6.1A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:1kV; Continuous Drain Current Id:6.1A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
MOSFET, N, 1000V, 6.1A, TO-247AC; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:1000V; Current, Id Cont:6A; Resistance, Rds On:2ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-247AC; Termination Type:Through Hole; Current, Idm Pulse:24A; Lead Spacing:5.45mm; No. of Pins:3; Power Dissipation:180W; Power, Pd:180W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:0.65°C/W; Transistors, No. of:1; Voltage, Vds:1000V; Voltage, Vds Max:1000V
IRFPG50PBF N-channel MOSFET Transistor, 6.1 A, 1000 V, 3-Pin TO-247AC | Siliconix / Vishay IRFPG50PBF
Power Field-Effect Transistor, 6.1A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
N CHANNEL MOSFET, 1KV, 6.1A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:1kV; Continuous Drain Current Id:6.1A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
MOSFET, N, 1000V, 6.1A, TO-247AC; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:1000V; Current, Id Cont:6A; Resistance, Rds On:2ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-247AC; Termination Type:Through Hole; Current, Idm Pulse:24A; Lead Spacing:5.45mm; No. of Pins:3; Power Dissipation:180W; Power, Pd:180W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:0.65°C/W; Transistors, No. of:1; Voltage, Vds:1000V; Voltage, Vds Max:1000V
The three parts on the right have similar specifications to IRFPG50PBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceRecovery TimeDrain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSeriesView Compare
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IRFPG50PBF8 WeeksThrough HoleThrough HoleTO-247-33TO-247-338.000013g-55°C~150°C TJTube2011Active1 (Unlimited)2Ohm150°C-55°C1kVMOSFET (Metal Oxide)6.1A11190W TcSingle190W19 nsN-Channel2Ohm @ 3.6A, 10V4V @ 250μA2800pF @ 25V6.1A Tc190nC @ 10V35ns1000V10V±20V36 ns130 ns6.1A4V20V1kV2.8nF950 ns2Ohm2 Ω4 V20.7mm15.87mm5.31mmUnknownNoROHS3 CompliantLead Free-- -
-Through HoleThrough HoleTO-247-33TO-247AC--55°C~175°C TJBulk2004Obsolete1 (Unlimited)-175°C-55°C60VMOSFET (Metal Oxide)130A1-250W TcSingle250W26 nsN-Channel5.5mOhm @ 78A, 10V4V @ 250μA6760pF @ 25V130A Tc260nC @ 10V200ns60V10V±20V150 ns100 ns130A-20V60V6.76nF-5.5mOhm5.5 mΩ4 V---No SVHCNoRoHS CompliantLead FreeHEXFET®
-
-Through HoleThrough HoleTO-247-33TO-247-338.000013g-55°C~150°C TJTube2016Obsolete1 (Unlimited)-150°C-55°C-MOSFET (Metal Oxide)-11190W TcSingle190W14 nsN-Channel300mOhm @ 9.6A, 10V4V @ 250μA2200pF @ 25V16A Tc76nC @ 10V54ns400V10V±30V35 ns33 ns16A4V30V400V2.2nF-300mOhm300 mΩ4 V20.7mm15.87mm5.31mmUnknownNoNon-RoHS Compliant--
-
--Through HoleTO-3P-3, SC-65-3-TO-3P--55°C~150°C TJTube2001Obsolete1 (Unlimited)----MOSFET (Metal Oxide)---205W Tc---N-Channel390mOhm @ 7A, 10V4V @ 250μA3800pF @ 25V14A Tc113nC @ 10V-500V10V±30V-------------------
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