IRFPF40

Vishay Siliconix IRFPF40

Part Number:
IRFPF40
Manufacturer:
Vishay Siliconix
Ventron No:
2491605-IRFPF40
Description:
MOSFET N-CH 900V 4.7A TO-247AC
ECAD Model:
Datasheet:
IRFPF40

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Specifications
Vishay Siliconix IRFPF40 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFPF40.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-247-3
  • Weight
    38.000013g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2017
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    900V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    4.7A
  • Number of Channels
    1
  • Power Dissipation-Max
    150W Tc
  • Element Configuration
    Single
  • Turn On Delay Time
    15 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    2.5Ohm @ 2.8A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1600pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    4.7A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    120nC @ 10V
  • Rise Time
    36ns
  • Drain to Source Voltage (Vdss)
    900V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    32 ns
  • Turn-Off Delay Time
    110 ns
  • Continuous Drain Current (ID)
    4.7A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    900V
  • Input Capacitance
    1.6nF
  • Drain to Source Resistance
    2.5Ohm
  • Rds On Max
    2.5 Ω
  • Height
    20.7mm
  • Length
    15.87mm
  • Width
    5.31mm
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
IRFPF40 Overview
The maximum input capacitance of this device is 1600pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 4.7A.When VGS=900V, and ID flows to VDS at 900VVDS, the drain-source breakdown voltage is 900V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 110 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 2.5Ohm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 15 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 900V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IRFPF40 Features
a continuous drain current (ID) of 4.7A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 110 ns
single MOSFETs transistor is 2.5Ohm
a 900V drain to source voltage (Vdss)


IRFPF40 Applications
There are a lot of Vishay Siliconix
IRFPF40 applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IRFPF40 More Descriptions
Trans MOSFET N-CH 900V 4.7A 3-Pin(3 Tab) TO-247AC
French Electronic Distributor since 1988
Product Comparison
The three parts on the right have similar specifications to IRFPF40.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    RoHS Status
    Lead Free
    Series
    Number of Elements
    Power Dissipation
    Nominal Vgs
    REACH SVHC
    Radiation Hardening
    Surface Mount
    Transistor Element Material
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    Terminal Finish
    Terminal Position
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    View Compare
  • IRFPF40
    IRFPF40
    Through Hole
    Through Hole
    TO-247-3
    3
    TO-247-3
    38.000013g
    -55°C~150°C TJ
    Tube
    2017
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    900V
    MOSFET (Metal Oxide)
    4.7A
    1
    150W Tc
    Single
    15 ns
    N-Channel
    2.5Ohm @ 2.8A, 10V
    4V @ 250μA
    1600pF @ 25V
    4.7A Tc
    120nC @ 10V
    36ns
    900V
    10V
    ±20V
    32 ns
    110 ns
    4.7A
    20V
    900V
    1.6nF
    2.5Ohm
    2.5 Ω
    20.7mm
    15.87mm
    5.31mm
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFP064VPBF
    Through Hole
    Through Hole
    TO-247-3
    3
    TO-247AC
    -
    -55°C~175°C TJ
    Bulk
    2004
    Obsolete
    1 (Unlimited)
    175°C
    -55°C
    60V
    MOSFET (Metal Oxide)
    130A
    -
    250W Tc
    Single
    26 ns
    N-Channel
    5.5mOhm @ 78A, 10V
    4V @ 250μA
    6760pF @ 25V
    130A Tc
    260nC @ 10V
    200ns
    60V
    10V
    ±20V
    150 ns
    100 ns
    130A
    20V
    60V
    6.76nF
    5.5mOhm
    5.5 mΩ
    -
    -
    -
    RoHS Compliant
    Lead Free
    HEXFET®
    1
    250W
    4 V
    No SVHC
    No
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFP150
    -
    Through Hole
    TO-247-3
    -
    -
    -
    -55°C~175°C TJ
    Tube
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    230W Tc
    -
    -
    N-Channel
    55m Ω @ 25A, 10V
    4V @ 250μA
    2.8pF @ 25V
    41A Tc
    140nC @ 10V
    -
    100V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    1
    -
    -
    -
    -
    NO
    SILICON
    e0
    no
    3
    TIN LEAD
    SINGLE
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    R-PSFM-T3
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    40A
    0.055Ohm
    160A
    100V
  • IRFP350
    Through Hole
    Through Hole
    TO-247-3
    3
    TO-247-3
    38.000013g
    -55°C~150°C TJ
    Tube
    2015
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    400V
    MOSFET (Metal Oxide)
    16A
    1
    190W Tc
    Single
    16 ns
    N-Channel
    300mOhm @ 9.6A, 10V
    4V @ 250μA
    2600pF @ 25V
    16A Tc
    150nC @ 10V
    49ns
    400V
    10V
    ±20V
    47 ns
    87 ns
    16A
    20V
    400V
    2.6nF
    300mOhm
    300 mΩ
    20.7mm
    15.87mm
    5.31mm
    Non-RoHS Compliant
    Contains Lead
    -
    -
    190W
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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