Vishay Siliconix IRFPF40
- Part Number:
- IRFPF40
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2491605-IRFPF40
- Description:
- MOSFET N-CH 900V 4.7A TO-247AC
- Datasheet:
- IRFPF40
Vishay Siliconix IRFPF40 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFPF40.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Supplier Device PackageTO-247-3
- Weight38.000013g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2017
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC900V
- TechnologyMOSFET (Metal Oxide)
- Current Rating4.7A
- Number of Channels1
- Power Dissipation-Max150W Tc
- Element ConfigurationSingle
- Turn On Delay Time15 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs2.5Ohm @ 2.8A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1600pF @ 25V
- Current - Continuous Drain (Id) @ 25°C4.7A Tc
- Gate Charge (Qg) (Max) @ Vgs120nC @ 10V
- Rise Time36ns
- Drain to Source Voltage (Vdss)900V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)32 ns
- Turn-Off Delay Time110 ns
- Continuous Drain Current (ID)4.7A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage900V
- Input Capacitance1.6nF
- Drain to Source Resistance2.5Ohm
- Rds On Max2.5 Ω
- Height20.7mm
- Length15.87mm
- Width5.31mm
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRFPF40 Overview
The maximum input capacitance of this device is 1600pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 4.7A.When VGS=900V, and ID flows to VDS at 900VVDS, the drain-source breakdown voltage is 900V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 110 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 2.5Ohm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 15 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 900V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRFPF40 Features
a continuous drain current (ID) of 4.7A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 110 ns
single MOSFETs transistor is 2.5Ohm
a 900V drain to source voltage (Vdss)
IRFPF40 Applications
There are a lot of Vishay Siliconix
IRFPF40 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 1600pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 4.7A.When VGS=900V, and ID flows to VDS at 900VVDS, the drain-source breakdown voltage is 900V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 110 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 2.5Ohm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 15 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 900V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRFPF40 Features
a continuous drain current (ID) of 4.7A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 110 ns
single MOSFETs transistor is 2.5Ohm
a 900V drain to source voltage (Vdss)
IRFPF40 Applications
There are a lot of Vishay Siliconix
IRFPF40 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IRFPF40 More Descriptions
Trans MOSFET N-CH 900V 4.7A 3-Pin(3 Tab) TO-247AC
French Electronic Distributor since 1988
French Electronic Distributor since 1988
The three parts on the right have similar specifications to IRFPF40.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ChannelsPower Dissipation-MaxElement ConfigurationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRoHS StatusLead FreeSeriesNumber of ElementsPower DissipationNominal VgsREACH SVHCRadiation HardeningSurface MountTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinView Compare
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IRFPF40Through HoleThrough HoleTO-247-33TO-247-338.000013g-55°C~150°C TJTube2017Obsolete1 (Unlimited)150°C-55°C900VMOSFET (Metal Oxide)4.7A1150W TcSingle15 nsN-Channel2.5Ohm @ 2.8A, 10V4V @ 250μA1600pF @ 25V4.7A Tc120nC @ 10V36ns900V10V±20V32 ns110 ns4.7A20V900V1.6nF2.5Ohm2.5 Ω20.7mm15.87mm5.31mmNon-RoHS CompliantContains Lead---------------------------
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Through HoleThrough HoleTO-247-33TO-247AC--55°C~175°C TJBulk2004Obsolete1 (Unlimited)175°C-55°C60VMOSFET (Metal Oxide)130A-250W TcSingle26 nsN-Channel5.5mOhm @ 78A, 10V4V @ 250μA6760pF @ 25V130A Tc260nC @ 10V200ns60V10V±20V150 ns100 ns130A20V60V6.76nF5.5mOhm5.5 mΩ---RoHS CompliantLead FreeHEXFET®1250W4 VNo SVHCNo--------------------
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-Through HoleTO-247-3----55°C~175°C TJTube-Obsolete1 (Unlimited)---MOSFET (Metal Oxide)--230W Tc--N-Channel55m Ω @ 25A, 10V4V @ 250μA2.8pF @ 25V41A Tc140nC @ 10V-100V10V±20V-----------Non-RoHS Compliant--1----NOSILICONe0no3TIN LEADSINGLENOT SPECIFIEDunknownNOT SPECIFIEDR-PSFM-T3COMMERCIALSINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING40A0.055Ohm160A100V
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Through HoleThrough HoleTO-247-33TO-247-338.000013g-55°C~150°C TJTube2015Obsolete1 (Unlimited)150°C-55°C400VMOSFET (Metal Oxide)16A1190W TcSingle16 nsN-Channel300mOhm @ 9.6A, 10V4V @ 250μA2600pF @ 25V16A Tc150nC @ 10V49ns400V10V±20V47 ns87 ns16A20V400V2.6nF300mOhm300 mΩ20.7mm15.87mm5.31mmNon-RoHS CompliantContains Lead--190W-----------------------
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