Vishay Siliconix IRFPE40

IRFPE40 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 490 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1900pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 5.4A amps.In this device, the drain-source breakdown voltage is 800V and VGS=800V, so the drain-source breakdown voltage is 800V in this case.It is [100 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 22A.A turn-on delay time of 16 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 4V.A device like this reduces its overall power consumption when it uses drive voltage (10V).

IRFPE40 Features
the avalanche energy rating (Eas) is 490 mJ
a continuous drain current (ID) of 5.4A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 22A.
a threshold voltage of 4V


IRFPE40 Applications
There are a lot of Vishay Siliconix
IRFPE40 applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies