Vishay Siliconix IRFPC50
- Part Number:
- IRFPC50
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2488239-IRFPC50
- Description:
- MOSFET N-CH 600V 11A TO-247AC
- Datasheet:
- IRFPC50
Vishay Siliconix IRFPC50 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFPC50.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Supplier Device PackageTO-247-3
- Weight38.000013g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2016
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC600V
- TechnologyMOSFET (Metal Oxide)
- Current Rating11A
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max180W Tc
- Element ConfigurationSingle
- Power Dissipation180W
- Turn On Delay Time18 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs600mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2700pF @ 25V
- Current - Continuous Drain (Id) @ 25°C11A Tc
- Gate Charge (Qg) (Max) @ Vgs140nC @ 10V
- Rise Time37ns
- Drain to Source Voltage (Vdss)600V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)36 ns
- Turn-Off Delay Time88 ns
- Continuous Drain Current (ID)11A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage600V
- Input Capacitance2.7nF
- Drain to Source Resistance600mOhm
- Rds On Max600 mΩ
- Height20.7mm
- Length15.87mm
- Width5.31mm
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRFPC50 Overview
A device's maximum input capacitance is 2700pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 11A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=600V, and this device has a drain-to-source breakdown voltage of 600V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 88 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 600mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFPC50 Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 88 ns
single MOSFETs transistor is 600mOhm
a 600V drain to source voltage (Vdss)
IRFPC50 Applications
There are a lot of Vishay Siliconix
IRFPC50 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 2700pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 11A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=600V, and this device has a drain-to-source breakdown voltage of 600V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 88 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 600mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFPC50 Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 88 ns
single MOSFETs transistor is 600mOhm
a 600V drain to source voltage (Vdss)
IRFPC50 Applications
There are a lot of Vishay Siliconix
IRFPC50 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRFPC50 More Descriptions
Trans MOSFET N-CH 600V 11A 3-Pin(3 Tab) TO-247AC
Power Field-Effect Transistor, 11A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
French Electronic Distributor since 1988
Power Field-Effect Transistor, 11A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
French Electronic Distributor since 1988
The three parts on the right have similar specifications to IRFPC50.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRoHS StatusLead FreeVgs(th) (Max) @ Id:Technology:Supplier Device Package:Series:Rds On (Max) @ Id, Vgs:Power Dissipation (Max):Packaging:Package / Case:Operating Temperature:Mounting Type:Input Capacitance (Ciss) (Max) @ Vds:Gate Charge (Qg) (Max) @ Vgs:FET Type:FET Feature:Drain to Source Voltage (Vdss):Current - Continuous Drain (Id) @ 25°C:Surface MountTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinThreshold VoltageREACH SVHCView Compare
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IRFPC50Through HoleThrough HoleTO-247-33TO-247-338.000013g-55°C~150°C TJTube2016Obsolete1 (Unlimited)150°C-55°C600VMOSFET (Metal Oxide)11A11180W TcSingle180W18 nsN-Channel600mOhm @ 6A, 10V4V @ 250μA2700pF @ 25V11A Tc140nC @ 10V37ns600V10V±20V36 ns88 ns11A20V600V2.7nF600mOhm600 mΩ20.7mm15.87mm5.31mmNon-RoHS CompliantContains Lead---------------------------------------
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---------------------------------------------4V @ 250µAMOSFET (Metal Oxide)TO-247-3-400 mOhm @ 8.4A, 10V190W (Tc)TubeTO-247-3-55°C ~ 150°C (TJ)Through Hole2600pF @ 25V150nC @ 10VN-Channel-500V14A (Tc)----------------------
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-Through HoleTO-247-3----55°C~175°C TJTube-Obsolete1 (Unlimited)---MOSFET (Metal Oxide)-1-230W Tc---N-Channel55m Ω @ 25A, 10V4V @ 250μA2.8pF @ 25V41A Tc140nC @ 10V-100V10V±20V-----------Non-RoHS Compliant-----------------NOSILICONe0no3TIN LEADSINGLENOT SPECIFIEDunknownNOT SPECIFIEDR-PSFM-T3COMMERCIALSINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING40A0.055Ohm160A100V--
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Through HoleThrough HoleTO-247-33TO-247-338.000013g-55°C~150°C TJTube1997Obsolete1 (Unlimited)150°C-55°C450VMOSFET (Metal Oxide)9.5A-1150W TcSingle150W8.7 nsN-Channel630mOhm @ 5.7A, 10V4V @ 250μA1400pF @ 25V9.5A Tc80nC @ 10V28ns450V10V±20V27 ns58 ns9.5A20V450V1.4nF630mOhm630 mΩ20.7mm15.87mm5.31mmROHS3 CompliantLead Free------------------------------------4VUnknown
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