Vishay Siliconix IRFP450PBF
- Part Number:
- IRFP450PBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2848554-IRFP450PBF
- Description:
- MOSFET N-CH 500V 14A TO-247AC
- Datasheet:
- IRFP450PBF
Vishay Siliconix IRFP450PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFP450PBF.
- Factory Lead Time12 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Weight38.000013g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2011
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationThrough Hole
- Resistance400mOhm
- Additional FeatureAVALANCHE RATED
- Voltage - Rated DC500V
- TechnologyMOSFET (Metal Oxide)
- Current Rating14A
- Pin Count3
- Lead Pitch5.45mm
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max190W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation190W
- Turn On Delay Time17 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs400m Ω @ 8.4A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2600pF @ 25V
- Current - Continuous Drain (Id) @ 25°C14A Tc
- Gate Charge (Qg) (Max) @ Vgs150nC @ 10V
- Rise Time47ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)44 ns
- Turn-Off Delay Time92 ns
- Continuous Drain Current (ID)14A
- Threshold Voltage4V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage500V
- Pulsed Drain Current-Max (IDM)56A
- Dual Supply Voltage500V
- Avalanche Energy Rating (Eas)760 mJ
- Recovery Time810 ns
- Max Junction Temperature (Tj)150°C
- Nominal Vgs2 V
- Height24.86mm
- Length15.87mm
- Width5.31mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFP450PBF Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 760 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2600pF @ 25V.This device conducts a continuous drain current (ID) of 14A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 92 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 56A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 17 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 4V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFP450PBF Features
the avalanche energy rating (Eas) is 760 mJ
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 92 ns
based on its rated peak drain current 56A.
a threshold voltage of 4V
IRFP450PBF Applications
There are a lot of Vishay Siliconix
IRFP450PBF applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 760 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2600pF @ 25V.This device conducts a continuous drain current (ID) of 14A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 92 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 56A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 17 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 4V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFP450PBF Features
the avalanche energy rating (Eas) is 760 mJ
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 92 ns
based on its rated peak drain current 56A.
a threshold voltage of 4V
IRFP450PBF Applications
There are a lot of Vishay Siliconix
IRFP450PBF applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IRFP450PBF More Descriptions
Transistor: N-MOSFET; unipolar; 500V; 14A; 0.38ohm; 190W; -65 150 deg.C; THT; TO247
Single N-Channel 500 V 0.4 Ohms Flange Mount Power Mosfet - TO-247AC
Trans MOSFET N-CH 500V 14A 3-Pin(3 Tab) TO-247AC / MOSFET N-CH 500V 14A TO-247AC
IRFP450PBF N-channel MOSFET Transistor, 14 A, 500 V, 3-Pin TO-247AC | Siliconix / Vishay IRFP450PBF
MOSFET, N, 500V, 14A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Source Voltage Vds:500V; On Resistance
Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET, N, TO-247AC; Transistor Polarity: N Channel; Continuous Drain Current Id: 14A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.4ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 190W; Transistor Case Style: TO-247AC; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Current Id Max: 14A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Through Hole; Voltage Vds Typ: 500V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
Single N-Channel 500 V 0.4 Ohms Flange Mount Power Mosfet - TO-247AC
Trans MOSFET N-CH 500V 14A 3-Pin(3 Tab) TO-247AC / MOSFET N-CH 500V 14A TO-247AC
IRFP450PBF N-channel MOSFET Transistor, 14 A, 500 V, 3-Pin TO-247AC | Siliconix / Vishay IRFP450PBF
MOSFET, N, 500V, 14A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Source Voltage Vds:500V; On Resistance
Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET, N, TO-247AC; Transistor Polarity: N Channel; Continuous Drain Current Id: 14A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.4ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 190W; Transistor Case Style: TO-247AC; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Current Id Max: 14A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Through Hole; Voltage Vds Typ: 500V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
The three parts on the right have similar specifications to IRFP450PBF.
-
ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationResistanceAdditional FeatureVoltage - Rated DCTechnologyCurrent RatingPin CountLead PitchNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Dual Supply VoltageAvalanche Energy Rating (Eas)Recovery TimeMax Junction Temperature (Tj)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeJESD-609 CodePbfree CodeECCN CodeTerminal FinishPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Qualification StatusCase ConnectionSupplier Device PackageMax Operating TemperatureMin Operating TemperatureDrain to Source Voltage (Vdss)Input CapacitanceDrain to Source ResistanceRds On MaxView Compare
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IRFP450PBF12 WeeksTinThrough HoleThrough HoleTO-247-3338.000013gSILICON-55°C~150°C TJTube2011Active1 (Unlimited)3Through Hole400mOhmAVALANCHE RATED500VMOSFET (Metal Oxide)14A35.45mm11190W TcSingleENHANCEMENT MODE190W17 nsN-ChannelSWITCHING400m Ω @ 8.4A, 10V4V @ 250μA2600pF @ 25V14A Tc150nC @ 10V47ns10V±20V44 ns92 ns14A4V20V500V56A500V760 mJ810 ns150°C2 V24.86mm15.87mm5.31mmUnknownNoROHS3 CompliantLead Free----------------
-
--Through HoleThrough HoleTO-247-3338.000013gSILICON-55°C~175°C TJTube2016Obsolete1 (Unlimited)3---60VMOSFET (Metal Oxide)70A3-11230W TcSingleENHANCEMENT MODE230W20 nsN-ChannelSWITCHING14m Ω @ 54A, 10V4V @ 250μA4500pF @ 25V70A Tc160nC @ 10V160ns10V±20V150 ns83 ns70A-20V60V------20.7mm15.87mm5.31mm--Non-RoHS CompliantContains Leade0noEAR99TIN LEADNOT SPECIFIEDNOT SPECIFIEDNot QualifiedDRAIN-------
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--Through HoleThrough HoleTO-247-3338.000013g--55°C~150°C TJTube1997Obsolete1 (Unlimited)----450VMOSFET (Metal Oxide)9.5A---1150W TcSingle-150W8.7 nsN-Channel-630mOhm @ 5.7A, 10V4V @ 250μA1400pF @ 25V9.5A Tc80nC @ 10V28ns10V±20V27 ns58 ns9.5A4V20V450V------20.7mm15.87mm5.31mmUnknown-ROHS3 CompliantLead Free--------TO-247-3150°C-55°C450V1.4nF630mOhm630 mΩ
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--Through HoleThrough HoleTO-247-3338.000013g--55°C~150°C TJTube2015Obsolete1 (Unlimited)----400VMOSFET (Metal Oxide)16A---1190W TcSingle-190W16 nsN-Channel-300mOhm @ 9.6A, 10V4V @ 250μA2600pF @ 25V16A Tc150nC @ 10V49ns10V±20V47 ns87 ns16A-20V400V------20.7mm15.87mm5.31mm--Non-RoHS CompliantContains Lead--------TO-247-3150°C-55°C400V2.6nF300mOhm300 mΩ
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