IRFP450PBF

Vishay Siliconix IRFP450PBF

Part Number:
IRFP450PBF
Manufacturer:
Vishay Siliconix
Ventron No:
2848554-IRFP450PBF
Description:
MOSFET N-CH 500V 14A TO-247AC
ECAD Model:
Datasheet:
IRFP450PBF

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Specifications
Vishay Siliconix IRFP450PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFP450PBF.
  • Factory Lead Time
    12 Weeks
  • Contact Plating
    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Weight
    38.000013g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2011
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Termination
    Through Hole
  • Resistance
    400mOhm
  • Additional Feature
    AVALANCHE RATED
  • Voltage - Rated DC
    500V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    14A
  • Pin Count
    3
  • Lead Pitch
    5.45mm
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    190W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    190W
  • Turn On Delay Time
    17 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    400m Ω @ 8.4A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2600pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    14A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    150nC @ 10V
  • Rise Time
    47ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    44 ns
  • Turn-Off Delay Time
    92 ns
  • Continuous Drain Current (ID)
    14A
  • Threshold Voltage
    4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    500V
  • Pulsed Drain Current-Max (IDM)
    56A
  • Dual Supply Voltage
    500V
  • Avalanche Energy Rating (Eas)
    760 mJ
  • Recovery Time
    810 ns
  • Max Junction Temperature (Tj)
    150°C
  • Nominal Vgs
    2 V
  • Height
    24.86mm
  • Length
    15.87mm
  • Width
    5.31mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFP450PBF Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 760 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2600pF @ 25V.This device conducts a continuous drain current (ID) of 14A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 92 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 56A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 17 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 4V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRFP450PBF Features
the avalanche energy rating (Eas) is 760 mJ
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 92 ns
based on its rated peak drain current 56A.
a threshold voltage of 4V


IRFP450PBF Applications
There are a lot of Vishay Siliconix
IRFP450PBF applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IRFP450PBF More Descriptions
Transistor: N-MOSFET; unipolar; 500V; 14A; 0.38ohm; 190W; -65 150 deg.C; THT; TO247
Single N-Channel 500 V 0.4 Ohms Flange Mount Power Mosfet - TO-247AC
Trans MOSFET N-CH 500V 14A 3-Pin(3 Tab) TO-247AC / MOSFET N-CH 500V 14A TO-247AC
IRFP450PBF N-channel MOSFET Transistor, 14 A, 500 V, 3-Pin TO-247AC | Siliconix / Vishay IRFP450PBF
MOSFET, N, 500V, 14A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Source Voltage Vds:500V; On Resistance
Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET, N, TO-247AC; Transistor Polarity: N Channel; Continuous Drain Current Id: 14A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.4ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 190W; Transistor Case Style: TO-247AC; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Current Id Max: 14A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Through Hole; Voltage Vds Typ: 500V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
Product Comparison
The three parts on the right have similar specifications to IRFP450PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    Resistance
    Additional Feature
    Voltage - Rated DC
    Technology
    Current Rating
    Pin Count
    Lead Pitch
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Dual Supply Voltage
    Avalanche Energy Rating (Eas)
    Recovery Time
    Max Junction Temperature (Tj)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    JESD-609 Code
    Pbfree Code
    ECCN Code
    Terminal Finish
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Case Connection
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Drain to Source Voltage (Vdss)
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    View Compare
  • IRFP450PBF
    IRFP450PBF
    12 Weeks
    Tin
    Through Hole
    Through Hole
    TO-247-3
    3
    38.000013g
    SILICON
    -55°C~150°C TJ
    Tube
    2011
    Active
    1 (Unlimited)
    3
    Through Hole
    400mOhm
    AVALANCHE RATED
    500V
    MOSFET (Metal Oxide)
    14A
    3
    5.45mm
    1
    1
    190W Tc
    Single
    ENHANCEMENT MODE
    190W
    17 ns
    N-Channel
    SWITCHING
    400m Ω @ 8.4A, 10V
    4V @ 250μA
    2600pF @ 25V
    14A Tc
    150nC @ 10V
    47ns
    10V
    ±20V
    44 ns
    92 ns
    14A
    4V
    20V
    500V
    56A
    500V
    760 mJ
    810 ns
    150°C
    2 V
    24.86mm
    15.87mm
    5.31mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFP054
    -
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    38.000013g
    SILICON
    -55°C~175°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    3
    -
    -
    -
    60V
    MOSFET (Metal Oxide)
    70A
    3
    -
    1
    1
    230W Tc
    Single
    ENHANCEMENT MODE
    230W
    20 ns
    N-Channel
    SWITCHING
    14m Ω @ 54A, 10V
    4V @ 250μA
    4500pF @ 25V
    70A Tc
    160nC @ 10V
    160ns
    10V
    ±20V
    150 ns
    83 ns
    70A
    -
    20V
    60V
    -
    -
    -
    -
    -
    -
    20.7mm
    15.87mm
    5.31mm
    -
    -
    Non-RoHS Compliant
    Contains Lead
    e0
    no
    EAR99
    TIN LEAD
    NOT SPECIFIED
    NOT SPECIFIED
    Not Qualified
    DRAIN
    -
    -
    -
    -
    -
    -
    -
  • IRFP344PBF
    -
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    38.000013g
    -
    -55°C~150°C TJ
    Tube
    1997
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    450V
    MOSFET (Metal Oxide)
    9.5A
    -
    -
    -
    1
    150W Tc
    Single
    -
    150W
    8.7 ns
    N-Channel
    -
    630mOhm @ 5.7A, 10V
    4V @ 250μA
    1400pF @ 25V
    9.5A Tc
    80nC @ 10V
    28ns
    10V
    ±20V
    27 ns
    58 ns
    9.5A
    4V
    20V
    450V
    -
    -
    -
    -
    -
    -
    20.7mm
    15.87mm
    5.31mm
    Unknown
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    TO-247-3
    150°C
    -55°C
    450V
    1.4nF
    630mOhm
    630 mΩ
  • IRFP350
    -
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    38.000013g
    -
    -55°C~150°C TJ
    Tube
    2015
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    400V
    MOSFET (Metal Oxide)
    16A
    -
    -
    -
    1
    190W Tc
    Single
    -
    190W
    16 ns
    N-Channel
    -
    300mOhm @ 9.6A, 10V
    4V @ 250μA
    2600pF @ 25V
    16A Tc
    150nC @ 10V
    49ns
    10V
    ±20V
    47 ns
    87 ns
    16A
    -
    20V
    400V
    -
    -
    -
    -
    -
    -
    20.7mm
    15.87mm
    5.31mm
    -
    -
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    TO-247-3
    150°C
    -55°C
    400V
    2.6nF
    300mOhm
    300 mΩ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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