Infineon Technologies IRFP4332PBF

Name: IRFP4332PBF
Brand: Infineon Technologies
SKU: 2848860-IRFP4332PBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFP4332PBF

Manufacturer:: Infineon Technologies

Ventron No:: 2848860-IRFP4332PBF

Description:: MOSFET N-CH 250V 57A TO-247AC

ECAD Model:

Datasheet:: IRFP4332PBF

Specifications

Infineon Technologies IRFP4332PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFP4332PBF.

Factory Lead Time
12 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-40°C~175°C TJ
Packaging
Bulk
Series
HEXFET®
Published
2006
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Resistance
33MOhm
Additional Feature
ULTRA LOW ON-RESISTANCE
Subcategory
FET General Purpose Power
Voltage - Rated DC
250V
Technology
MOSFET (Metal Oxide)
Current Rating
57A
Number of Elements
1
Power Dissipation-Max
360W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
120mW
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
33m Ω @ 35A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
5860pF @ 25V
Current - Continuous Drain (Id) @ 25°C
57A Tc
Gate Charge (Qg) (Max) @ Vgs
150nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Continuous Drain Current (ID)
57A
Threshold Voltage
5V
JEDEC-95 Code
TO-247AC
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
250V
Dual Supply Voltage
250V
Recovery Time
290 ns
Nominal Vgs
5 V
Height
20.3mm
Length
15.875mm
Width
5.3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRFP4332PBF Description
This HEXFET? Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per si icon area and low EPuLSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.

IRFP4332PBF Features
Technology for Advanced Processes
PDP Sustain Optimized Key Parameters
Applications for Energy Recovery and Pass Switches
Low EPULSE Rating to Save Energy
PDP Sustain, Energy Recovery, and Pass Switch Applications Dissipation

IRFP4332PBF Applications
Switching applications

IRFP4332PBF More Descriptions

MOSFET Operating temperature: -40...175 °C Housing type: TO-247 Power dissipation: 360 W
MOSFET, N Ch., 250V, 57A, 33 MOHM, 99 NC QG, TO-247AC, Pb-Free
Single N-Channel 250 V 33 mOhm 150 nC HEXFET® Power Mosfet - TO-247AC
Power Field-Effect Transistor, 57A I(D), 250V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET, N, 250V, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:57A; Drain Source Voltage Vds:300V; On Resistance Rds(on):29mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:120mW; Operating Temperature Range:-40°C to 175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4332; Current Id Max:57A; Package / Case:TO-247AC; Power Dissipation Pd:120mW; Pulse Current Idm:230A; SMD Marking:120; Termination Type:Through Hole; Voltage Vds Typ:250V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

Product Comparison

The three parts on the right have similar specifications to IRFP4332PBF.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Recovery Time

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Weight

JESD-609 Code

Pbfree Code

Terminal Finish

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Number of Channels

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Drain to Source Voltage (Vdss)

Input Capacitance

Drain to Source Resistance

Rds On Max

View Compare
IRFP4332PBF

Infineon Technologies

12 Weeks

Tin

Through Hole

Through Hole

TO-247-3

3

SILICON

-40°C~175°C TJ

Bulk

HEXFET®

2006

Active

1 (Unlimited)

3

Through Hole

EAR99

33MOhm

ULTRA LOW ON-RESISTANCE

FET General Purpose Power

250V

MOSFET (Metal Oxide)

57A

1

360W Tc

Single

ENHANCEMENT MODE

120mW

DRAIN

N-Channel

SWITCHING

33m Ω @ 35A, 10V

5V @ 250μA

5860pF @ 25V

57A Tc

150nC @ 10V

10V

±30V

57A

5V

TO-247AC

30V

250V

250V

290 ns

5 V

20.3mm

15.875mm

5.3mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRFP054

Vishay Siliconix

-

-

Through Hole

Through Hole

TO-247-3

3

SILICON

-55°C~175°C TJ

Tube

-

2016

Obsolete

1 (Unlimited)

3

-

EAR99

-

-

-

60V

MOSFET (Metal Oxide)

70A

1

230W Tc

Single

ENHANCEMENT MODE

230W

DRAIN

N-Channel

SWITCHING

14m Ω @ 54A, 10V

4V @ 250μA

4500pF @ 25V

70A Tc

160nC @ 10V

10V

±20V

70A

-

-

20V

60V

-

-

-

20.7mm

15.87mm

5.31mm

-

-

Non-RoHS Compliant

Contains Lead

38.000013g

e0

no

TIN LEAD

NOT SPECIFIED

NOT SPECIFIED

3

Not Qualified

1

20 ns

160ns

150 ns

83 ns

-

-

-

-

-

-

-

IRFP4332PBF vs IRFP054
IRFP350LC

Vishay Siliconix

-

-

Through Hole

Through Hole

TO-247-3

3

-

-55°C~150°C TJ

Tube

-

2016

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

1

190W Tc

Single

-

190W

-

N-Channel

-

300mOhm @ 9.6A, 10V

4V @ 250μA

2200pF @ 25V

16A Tc

76nC @ 10V

10V

±30V

16A

4V

-

30V

400V

-

-

4 V

20.7mm

15.87mm

5.31mm

Unknown

No

Non-RoHS Compliant

-

38.000013g

-

-

-

-

-

-

-

1

14 ns

54ns

35 ns

33 ns

TO-247-3

150°C

-55°C

400V

2.2nF

300mOhm

300 mΩ

IRFP4332PBF vs IRFP350LC
IRFP32N50K

Vishay Siliconix

-

-

Through Hole

Through Hole

TO-247-3

-

-

-55°C~150°C TJ

Tube

-

2014

Obsolete

1 (Unlimited)

-

-

-

-

-

-

500V

MOSFET (Metal Oxide)

32A

-

460W Tc

Single

-

-

-

N-Channel

-

160mOhm @ 32A, 10V

5V @ 250μA

5280pF @ 25V

32A Tc

190nC @ 10V

10V

±30V

32A

-

-

30V

500V

-

-

-

20.7mm

15.87mm

5.31mm

-

No

Non-RoHS Compliant

Contains Lead

38.000013g

-

-

-

-

-

-

-

1

28 ns

120ns

54 ns

48 ns

TO-247-3

150°C

-55°C

500V

5.28nF

160mOhm

160 mΩ

IRFP4332PBF vs IRFP32N50K

Certification

Related parts for IRFP4332PBF

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Infineon Technologies

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IRFP4332PBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRFP4332PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 250V 57A 3-Pin(3 Tab) TO-247AC T RoHS: Compliant	170	1 $3.441 10 $3.0379 100 $2.656 250 $2.226 500 $2.003
IRFP4332PBF DISTI #	Infineon Technologies AG	MOSFET N-CH 250V 57A TO-247AC RoHS: Compliant	1227	1 $4.89 10 $4.363 100 $3.5773 500 $2.89676 1000 $2.44306
IRFP4332PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 250V 57A 3-Pin(3 Tab) TO-247AC T RoHS: Compliant	825	4 $6.5408 10 $3.5572 50 $3.009 100 $2.652
IRFP4332PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 250V 57A 3-Pin(3 Tab) TO-247AC T RoHS: Compliant	170	4 $3.441 10 $3.0379 100 $2.656
IRFP4332PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 250V 57A 3-Pin(3 Tab) TO-247AC - RoHS: Compliant	1069	1 $2.79 10 $2.39 25 $2.39 50 $2.39 100 $1.89 500 $1.69 1000 $1.69
IRFP4332PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 250V 57A 3-Pin(3 Tab) TO-247AC ( RoHS: Compliant	0
IRFP4332PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 250V 57A 3-Pin(3 Tab) TO-247AC ( RoHS: Compliant	0	1 $1.89 10 $1.79 25 $1.69 50 $1.59 100 $1.59 500 $1.49 1000 $1.39
IRFP4332PBF DISTI #	Infineon Technologies AG	MOSFET Transistor, N Channel, 57 A, 300 V, 29 mohm	647	1 $4.2 10 $3.57 25 $3.41 50 $3.26 100 $3.1 250 $2.94 500 $2.64
IRFP4332PBF DISTI #	Infineon Technologies AG	IRFP4332PBF N-channel MOSFET Transistor, 57 A, 2 RoHS: Compliant	0	225 $4.86
IRFP4332PBF DISTI #	Infineon Technologies AG	MOSFET MOSFT 250V 57A 33mOhm 99nC Qg RoHS: Compliant	510	1 $4.2 10 $3.57 100 $3.1 250 $2.94 500 $2.64
IRFP4332PBF DISTI #	Infineon Technologies AG	Single N-Channel 250 V 33 mOhm 150 nC HEXFET Power RoHS: Compliant	8751	5 $2.44 50 $2.23 300 $1.87
IRFP4332PBF DISTI #	Infineon Technologies AG	MOSFET N-CHANNEL 250V 57A HEXFET TO247AC, PK	1057	2 $3.36 12 $3.02
IRFP4332PBF DISTI #	Infineon Technologies AG	Transistor: N-MOSFET, unipolar, 250V, 57A, 360	323	1 $3.15 3 $2.85 10 $2.36 100 $2
IRFP4332PBF DISTI #	Infineon Technologies AG	N-CH 250V 57A 33mOhm TO247 RoHS: Compliant	50	25 $2.77 75 $2.61 125 $2.45 250 $2.23 400 $2.15
IRFP4332PBF DISTI #	INFINEON/IR	TO-247AC RoHS: Compliant	2772	325 $2.21 2772 $2.07
IRFP4332PBF DISTI #	Infineon Technologies AG	RoHS: Compliant	6950	50 $4.9 6950 $4.45
IRFP4332PBF DISTI #	Infineon Technologies AG	N-Ch 250V 57A 360W 0,033R TO247AC RoHS: Compliant	1125	5 $2.38 25 $1.78 100 $1.58 200 $1.52
IRFP4332PBF DISTI #	Infineon Technologies AG	MOSFET, N, 250V, TO-247AC RoHS: Compliant	647	1 $6.65 10 $5.65 100 $4.91 250 $4.66 500 $4.18
IRFP4332PBF DISTI #	Infineon Technologies AG	MOSFET, N, 250V, TO-247AC RoHS: Compliant	666	1 $3.43 10 $2.69 100 $2.28 250 $2.17 500 $2.03
IRFP4332PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 250V 57A 3-Pin(3 Tab) TO-247AC T RoHS: Compliant	825	1 $5.13 10 $2.79 50 $2.36 100 $2.08
IRFP4332PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 250V 57A 3-Pin(3 Tab) TO-247AC T RoHS: Compliant	170	1 $3.441 10 $3.0379 100 $2.656
IRFP4332PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 250V 57A 3-Pin(3 Tab) TO-247AC T RoHS: Compliant	850	1 $5.81 10 $3.77 50 $3.1 100 $2.85 500 $2.18

IRFP433~~(3)~~
IRFP43~~(12)~~
IRFP4~~(66)~~
IRFP~~(73)~~
IRF~~(69)~~

Infineon Technologies IRFP4332PBF

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