IRFP4321PBF

Infineon Technologies IRFP4321PBF

Part Number:
IRFP4321PBF
Manufacturer:
Infineon Technologies
Ventron No:
2848815-IRFP4321PBF
Description:
MOSFET N-CH 150V 78A TO-247AC
ECAD Model:
Datasheet:
IRFP4321PBF

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Specifications
Infineon Technologies IRFP4321PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFP4321PBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-247AC
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2006
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Termination
    Through Hole
  • Resistance
    15.5MOhm
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    150V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    78A
  • Power Dissipation-Max
    310W Tc
  • Element Configuration
    Single
  • Power Dissipation
    310mW
  • Turn On Delay Time
    18 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    15.5mOhm @ 33A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    4460pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    78A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    110nC @ 10V
  • Rise Time
    60ns
  • Drain to Source Voltage (Vdss)
    150V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    35 ns
  • Turn-Off Delay Time
    25 ns
  • Continuous Drain Current (ID)
    78A
  • Threshold Voltage
    5V
  • Gate to Source Voltage (Vgs)
    30V
  • Drain to Source Breakdown Voltage
    150V
  • Dual Supply Voltage
    150V
  • Input Capacitance
    4.46nF
  • Recovery Time
    130 ns
  • Drain to Source Resistance
    15.5mOhm
  • Rds On Max
    15.5 mΩ
  • Nominal Vgs
    5 V
  • Height
    20.3mm
  • Length
    15.875mm
  • Width
    5.3mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFP4321PBF Description 
The Infineon Technologies IRFP4321PBF HEXFET Power MOSFET  features benchmark on-state resistance (RDS(on)) and high package current ratings for high-power DC motors, power tools, industrial batteries and power supply applications. Utilizing IR’s latest trench technology, this family of benchmark MOSFETs offers a low RDS(on) at 4.5Vgs to significantly improve thermal efficiency. 

IRFP4321PBF Features
Low RDS(ON) Reduces Losses
Low Gate Charge Improves the Switching Performance
Improved Diode Recovery Improves Switching & EMI Performance 
30V Gate Voltage Rating Improves Robustness
Fully Characterized Avalanche SOA

IRFP4321PBF Applications
Uninterruptible Power Supply
Hard Switched and High-Frequency Circuits
Motion Control Applications
High-Efficiency Synchronous Rectification in SMPS
IRFP4321PBF More Descriptions
IRFP4321PBF N-channel MOSFET Transistor, 78 A, 150 V, 3-Pin TO-247AC
MOSFET Operating temperature: -55... 175 °C Housing type: TO-247 Power dissipation: 310 W
150V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHSInfineon SCT
Single N-Channel 150 V 15.5 Ohm 110 nC HEXFET® Power Mosfet - TO-247AC
Power Field-Effect Transistor, 75A I(D), 150V, 0.0155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET, N, 150V, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:78A; Drain Source Voltage Vds:150V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:310mW; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4321; Current Id Max:78A; Package / Case:TO-247AC; Power Dissipation Pd:310mW; Pulse Current Idm:330A; SMD Marking:310; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
Product Comparison
The three parts on the right have similar specifications to IRFP4321PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Termination
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Input Capacitance
    Recovery Time
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Transistor Element Material
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    Terminal Finish
    Terminal Position
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Weight
    Number of Channels
    View Compare
  • IRFP4321PBF
    IRFP4321PBF
    12 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    TO-247AC
    -55°C~175°C TJ
    Tube
    HEXFET®
    2006
    Active
    1 (Unlimited)
    Through Hole
    15.5MOhm
    175°C
    -55°C
    150V
    MOSFET (Metal Oxide)
    78A
    310W Tc
    Single
    310mW
    18 ns
    N-Channel
    15.5mOhm @ 33A, 10V
    5V @ 250μA
    4460pF @ 25V
    78A Tc
    110nC @ 10V
    60ns
    150V
    10V
    ±30V
    35 ns
    25 ns
    78A
    5V
    30V
    150V
    150V
    4.46nF
    130 ns
    15.5mOhm
    15.5 mΩ
    5 V
    20.3mm
    15.875mm
    5.3mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFP150
    -
    -
    Through Hole
    TO-247-3
    -
    -
    -55°C~175°C TJ
    Tube
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    230W Tc
    -
    -
    -
    N-Channel
    55m Ω @ 25A, 10V
    4V @ 250μA
    2.8pF @ 25V
    41A Tc
    140nC @ 10V
    -
    100V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    NO
    SILICON
    e0
    no
    3
    TIN LEAD
    SINGLE
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    R-PSFM-T3
    COMMERCIAL
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    40A
    0.055Ohm
    160A
    100V
    -
    -
  • IRFP350LC
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    TO-247-3
    -55°C~150°C TJ
    Tube
    -
    2016
    Obsolete
    1 (Unlimited)
    -
    -
    150°C
    -55°C
    -
    MOSFET (Metal Oxide)
    -
    190W Tc
    Single
    190W
    14 ns
    N-Channel
    300mOhm @ 9.6A, 10V
    4V @ 250μA
    2200pF @ 25V
    16A Tc
    76nC @ 10V
    54ns
    400V
    10V
    ±30V
    35 ns
    33 ns
    16A
    4V
    30V
    400V
    -
    2.2nF
    -
    300mOhm
    300 mΩ
    4 V
    20.7mm
    15.87mm
    5.31mm
    Unknown
    No
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    1
    -
    -
    -
    -
    -
    -
    -
    -
    38.000013g
    1
  • IRFP32N50K
    -
    Through Hole
    Through Hole
    TO-247-3
    -
    TO-247-3
    -55°C~150°C TJ
    Tube
    -
    2014
    Obsolete
    1 (Unlimited)
    -
    -
    150°C
    -55°C
    500V
    MOSFET (Metal Oxide)
    32A
    460W Tc
    Single
    -
    28 ns
    N-Channel
    160mOhm @ 32A, 10V
    5V @ 250μA
    5280pF @ 25V
    32A Tc
    190nC @ 10V
    120ns
    500V
    10V
    ±30V
    54 ns
    48 ns
    32A
    -
    30V
    500V
    -
    5.28nF
    -
    160mOhm
    160 mΩ
    -
    20.7mm
    15.87mm
    5.31mm
    -
    No
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    38.000013g
    1
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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