Infineon Technologies IRFP4321PBF
- Part Number:
- IRFP4321PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2848815-IRFP4321PBF
- Description:
- MOSFET N-CH 150V 78A TO-247AC
- Datasheet:
- IRFP4321PBF
Infineon Technologies IRFP4321PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFP4321PBF.
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Supplier Device PackageTO-247AC
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2006
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TerminationThrough Hole
- Resistance15.5MOhm
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- Voltage - Rated DC150V
- TechnologyMOSFET (Metal Oxide)
- Current Rating78A
- Power Dissipation-Max310W Tc
- Element ConfigurationSingle
- Power Dissipation310mW
- Turn On Delay Time18 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs15.5mOhm @ 33A, 10V
- Vgs(th) (Max) @ Id5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds4460pF @ 25V
- Current - Continuous Drain (Id) @ 25°C78A Tc
- Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
- Rise Time60ns
- Drain to Source Voltage (Vdss)150V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)35 ns
- Turn-Off Delay Time25 ns
- Continuous Drain Current (ID)78A
- Threshold Voltage5V
- Gate to Source Voltage (Vgs)30V
- Drain to Source Breakdown Voltage150V
- Dual Supply Voltage150V
- Input Capacitance4.46nF
- Recovery Time130 ns
- Drain to Source Resistance15.5mOhm
- Rds On Max15.5 mΩ
- Nominal Vgs5 V
- Height20.3mm
- Length15.875mm
- Width5.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFP4321PBF Description
The Infineon Technologies IRFP4321PBF HEXFET Power MOSFET features benchmark on-state resistance (RDS(on)) and high package current ratings for high-power DC motors, power tools, industrial batteries and power supply applications. Utilizing IR’s latest trench technology, this family of benchmark MOSFETs offers a low RDS(on) at 4.5Vgs to significantly improve thermal efficiency.
IRFP4321PBF Features
Low RDS(ON) Reduces Losses
Low Gate Charge Improves the Switching Performance
Improved Diode Recovery Improves Switching & EMI Performance
30V Gate Voltage Rating Improves Robustness
Fully Characterized Avalanche SOA
IRFP4321PBF Applications
Uninterruptible Power Supply
Hard Switched and High-Frequency Circuits
Motion Control Applications
High-Efficiency Synchronous Rectification in SMPS
The Infineon Technologies IRFP4321PBF HEXFET Power MOSFET features benchmark on-state resistance (RDS(on)) and high package current ratings for high-power DC motors, power tools, industrial batteries and power supply applications. Utilizing IR’s latest trench technology, this family of benchmark MOSFETs offers a low RDS(on) at 4.5Vgs to significantly improve thermal efficiency.
IRFP4321PBF Features
Low RDS(ON) Reduces Losses
Low Gate Charge Improves the Switching Performance
Improved Diode Recovery Improves Switching & EMI Performance
30V Gate Voltage Rating Improves Robustness
Fully Characterized Avalanche SOA
IRFP4321PBF Applications
Uninterruptible Power Supply
Hard Switched and High-Frequency Circuits
Motion Control Applications
High-Efficiency Synchronous Rectification in SMPS
IRFP4321PBF More Descriptions
IRFP4321PBF N-channel MOSFET Transistor, 78 A, 150 V, 3-Pin TO-247AC
MOSFET Operating temperature: -55... 175 °C Housing type: TO-247 Power dissipation: 310 W
150V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHSInfineon SCT
Single N-Channel 150 V 15.5 Ohm 110 nC HEXFET® Power Mosfet - TO-247AC
Power Field-Effect Transistor, 75A I(D), 150V, 0.0155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET, N, 150V, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:78A; Drain Source Voltage Vds:150V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:310mW; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4321; Current Id Max:78A; Package / Case:TO-247AC; Power Dissipation Pd:310mW; Pulse Current Idm:330A; SMD Marking:310; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
MOSFET Operating temperature: -55... 175 °C Housing type: TO-247 Power dissipation: 310 W
150V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHSInfineon SCT
Single N-Channel 150 V 15.5 Ohm 110 nC HEXFET® Power Mosfet - TO-247AC
Power Field-Effect Transistor, 75A I(D), 150V, 0.0155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET, N, 150V, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:78A; Drain Source Voltage Vds:150V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:310mW; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4321; Current Id Max:78A; Package / Case:TO-247AC; Power Dissipation Pd:310mW; Pulse Current Idm:330A; SMD Marking:310; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to IRFP4321PBF.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)TerminationResistanceMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageInput CapacitanceRecovery TimeDrain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinWeightNumber of ChannelsView Compare
-
IRFP4321PBF12 WeeksThrough HoleThrough HoleTO-247-33TO-247AC-55°C~175°C TJTubeHEXFET®2006Active1 (Unlimited)Through Hole15.5MOhm175°C-55°C150VMOSFET (Metal Oxide)78A310W TcSingle310mW18 nsN-Channel15.5mOhm @ 33A, 10V5V @ 250μA4460pF @ 25V78A Tc110nC @ 10V60ns150V10V±30V35 ns25 ns78A5V30V150V150V4.46nF130 ns15.5mOhm15.5 mΩ5 V20.3mm15.875mm5.3mmNo SVHCNoROHS3 CompliantLead Free------------------------
-
--Through HoleTO-247-3---55°C~175°C TJTube--Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)-230W Tc---N-Channel55m Ω @ 25A, 10V4V @ 250μA2.8pF @ 25V41A Tc140nC @ 10V-100V10V±20V-----------------Non-RoHS Compliant-NOSILICONe0no3TIN LEADSINGLENOT SPECIFIEDunknownNOT SPECIFIEDR-PSFM-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING40A0.055Ohm160A100V--
-
-Through HoleThrough HoleTO-247-33TO-247-3-55°C~150°C TJTube-2016Obsolete1 (Unlimited)--150°C-55°C-MOSFET (Metal Oxide)-190W TcSingle190W14 nsN-Channel300mOhm @ 9.6A, 10V4V @ 250μA2200pF @ 25V16A Tc76nC @ 10V54ns400V10V±30V35 ns33 ns16A4V30V400V-2.2nF-300mOhm300 mΩ4 V20.7mm15.87mm5.31mmUnknownNoNon-RoHS Compliant-------------1--------38.000013g1
-
-Through HoleThrough HoleTO-247-3-TO-247-3-55°C~150°C TJTube-2014Obsolete1 (Unlimited)--150°C-55°C500VMOSFET (Metal Oxide)32A460W TcSingle-28 nsN-Channel160mOhm @ 32A, 10V5V @ 250μA5280pF @ 25V32A Tc190nC @ 10V120ns500V10V±30V54 ns48 ns32A-30V500V-5.28nF-160mOhm160 mΩ-20.7mm15.87mm5.31mm-NoNon-RoHS CompliantContains Lead---------------------38.000013g1
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
27 September 2023
BC640 PNP Transistor: Features, Package and Other Details
Ⅰ. Overview of BC640Ⅱ. Symbol and footprint of BC640Ⅲ. Technical parametersⅣ. Features of BC640Ⅴ. Pinout and package of BC640Ⅵ. Application of BC640Ⅶ. How to optimize the performance of... -
27 September 2023
Introduction to the BTS7960B Motor Drive Module
Ⅰ. What is BTS7960B?Ⅱ. BTS7960B symbol, footprint and pin configurationⅢ. Technical parametersⅣ. Features of BTS7960BⅤ. What are the advantages and disadvantages of BTS7960B?Ⅵ. How to optimize the BTS7960B... -
28 September 2023
MPSA56 PNP General Purpose Transistor: Features, Working Principle and Application
Ⅰ. Overview of MPSA56Ⅱ. Symbol and footprint of MPSA56Ⅲ. Technical parametersⅣ. Features of MPSA56Ⅴ. Pinout and package of MPSA56Ⅵ. How does MPSA56 work?Ⅶ. How does the MPSA56 transistor... -
28 September 2023
TIP35C Footprint, Package, Application and Other Details
Ⅰ. Overview of TIP35CⅡ. Symbol and footprint of TIP35CⅢ. Technical parametersⅣ. Features of TIP35CⅤ. Pinout and package of TIP35CⅥ. Working principle of TIP35C audio power amplifierⅦ. Application of...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.