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IRFP4229PBF

Infineon Technologies IRFP4229PBF

Part Number:
IRFP4229PBF
Manufacturer:
Infineon Technologies
Ventron No:
2848866-IRFP4229PBF
Description:
MOSFET N-CH 250V 44A TO-247AC
ECAD Model:
Datasheet:
IRFP4229PBF

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Specifications
Infineon Technologies IRFP4229PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFP4229PBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -40°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2006
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Termination
    Through Hole
  • ECCN Code
    EAR99
  • Resistance
    46MOhm
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Power Dissipation-Max
    310W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    310mW
  • Case Connection
    DRAIN
  • Turn On Delay Time
    25 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    46m Ω @ 26A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    4560pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    44A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    110nC @ 10V
  • Rise Time
    27ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    19 ns
  • Turn-Off Delay Time
    44 ns
  • Continuous Drain Current (ID)
    44A
  • Threshold Voltage
    5V
  • JEDEC-95 Code
    TO-247AC
  • Gate to Source Voltage (Vgs)
    30V
  • Drain to Source Breakdown Voltage
    250V
  • Dual Supply Voltage
    250V
  • Recovery Time
    290 ns
  • Nominal Vgs
    5 V
  • Height
    20.7mm
  • Length
    15.87mm
  • Width
    5.3086mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFP4229PBF Description The IRFP4229PBF is a HEXFET? single N-channel PDP switch Power MOSFET specifically designed for sustain, energy recovery, and pass switch applications in plasma display panels. It utilizes the latest processing techniques to achieve low ON-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175??C operating junction temperature and high repetitive peak current capability. It combines to make this MOSFET a highly efficient, robust, and reliable device for PDP driving applications. IRFP4229PBF is an N-channel PDP switch HEXFET? power MOSFET designed specifically for sustain, energy recovery, and pass switch applications in plasma displays. Using the latest processing techniques, it achieves low ON-resistance per silicon area and low EPULSE ratings. The IRFP4229PBF MOSFET also has a high repetitive peak current capability and a junction temperature of 175??C. The IRFP4229PBF is highly efficient, robust, and reliable for PDP driving applications due to these factors.
IRFP4229PBF Features High-current rating
Industry-standard through-hole power package
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
IRFP4229PBF Applications UPS
SMPS
DC motor drives
Solar power inverter
Power Management
Consumer Electronics
IRFP4229PBF More Descriptions
MOSFET Operating temperature: -40... 175 ¡ãC Housing type: TO-247 Power dissipation: 150 W
250V Single N-Channel HEXFET Power MOSFET PDP Switch in a TO-247AC package, TO247-3, RoHSInfineon SCT
MOSFET, N Ch., 250V, 44A, 46 MOHM, 72 NC QG, TO-247AC, Pb-Free
Single N-Channel 250 V 46 mOhm 110 nC HEXFET® Power Mosfet - TO-247AC
Power Field-Effect Transistor, 44A I(D), 250V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET, N, 250V, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:300V; On Resistance Rds(on):38mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:310mW; Operating Temperature Range:-40°C to 175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4229; Current Id Max:44A; Package / Case:TO-247AC; Power Dissipation Pd:310mW; Pulse Current Idm:180A; SMD Marking:310; Termination Type:Through Hole; Voltage Vds Typ:250V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
Product Comparison
The three parts on the right have similar specifications to IRFP4229PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Subcategory
    Technology
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Recovery Time
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Current Rating
    Drain to Source Voltage (Vdss)
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Weight
    Number of Channels
    View Compare
  • IRFP4229PBF
    IRFP4229PBF
    Infineon Technologies
    12 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -40°C~175°C TJ
    Tube
    HEXFET®
    2006
    Active
    1 (Unlimited)
    3
    Through Hole
    EAR99
    46MOhm
    FET General Purpose Power
    MOSFET (Metal Oxide)
    1
    310W Tc
    Single
    ENHANCEMENT MODE
    310mW
    DRAIN
    25 ns
    N-Channel
    SWITCHING
    46m Ω @ 26A, 10V
    5V @ 250μA
    4560pF @ 25V
    44A Tc
    110nC @ 10V
    27ns
    10V
    ±30V
    19 ns
    44 ns
    44A
    5V
    TO-247AC
    30V
    250V
    250V
    290 ns
    5 V
    20.7mm
    15.87mm
    5.3086mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFP064VPBF
    IRFP064VPBF
    Infineon Technologies
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    -
    -55°C~175°C TJ
    Bulk
    HEXFET®
    2004
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    1
    250W Tc
    Single
    -
    250W
    -
    26 ns
    N-Channel
    -
    5.5mOhm @ 78A, 10V
    4V @ 250μA
    6760pF @ 25V
    130A Tc
    260nC @ 10V
    200ns
    10V
    ±20V
    150 ns
    100 ns
    130A
    -
    -
    20V
    60V
    -
    -
    4 V
    -
    -
    -
    No SVHC
    No
    RoHS Compliant
    Lead Free
    TO-247AC
    175°C
    -55°C
    60V
    130A
    60V
    6.76nF
    5.5mOhm
    5.5 mΩ
    -
    -
    IRFP4229PBF vs IRFP064VPBF
  • IRFP344PBF
    IRFP344PBF
    Vishay Siliconix
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    -
    -55°C~150°C TJ
    Tube
    -
    1997
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    150W Tc
    Single
    -
    150W
    -
    8.7 ns
    N-Channel
    -
    630mOhm @ 5.7A, 10V
    4V @ 250μA
    1400pF @ 25V
    9.5A Tc
    80nC @ 10V
    28ns
    10V
    ±20V
    27 ns
    58 ns
    9.5A
    4V
    -
    20V
    450V
    -
    -
    -
    20.7mm
    15.87mm
    5.31mm
    Unknown
    -
    ROHS3 Compliant
    Lead Free
    TO-247-3
    150°C
    -55°C
    450V
    9.5A
    450V
    1.4nF
    630mOhm
    630 mΩ
    38.000013g
    1
    IRFP4229PBF vs IRFP344PBF
  • IRFP350
    IRFP350
    Vishay Siliconix
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    -
    -55°C~150°C TJ
    Tube
    -
    2015
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    190W Tc
    Single
    -
    190W
    -
    16 ns
    N-Channel
    -
    300mOhm @ 9.6A, 10V
    4V @ 250μA
    2600pF @ 25V
    16A Tc
    150nC @ 10V
    49ns
    10V
    ±20V
    47 ns
    87 ns
    16A
    -
    -
    20V
    400V
    -
    -
    -
    20.7mm
    15.87mm
    5.31mm
    -
    -
    Non-RoHS Compliant
    Contains Lead
    TO-247-3
    150°C
    -55°C
    400V
    16A
    400V
    2.6nF
    300mOhm
    300 mΩ
    38.000013g
    1
    IRFP4229PBF vs IRFP350
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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