Infineon Technologies IRFP3710PBF

Name: IRFP3710PBF
Brand: Infineon Technologies
SKU: 2479370-IRFP3710PBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFP3710PBF

Manufacturer:: Infineon Technologies

Ventron No:: 2479370-IRFP3710PBF

Description:: MOSFET N-CH 100V 57A TO-247AC

ECAD Model:

Datasheet:: IRFP3710PBF

Specifications

Infineon Technologies IRFP3710PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFP3710PBF.

Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Bulk
Series
HEXFET®
Published
1998
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Additional Feature
AVALANCHE RATED
Voltage - Rated DC
100V
Technology
MOSFET (Metal Oxide)
Current Rating
57A
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
200W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
180W
Case Connection
DRAIN
Turn On Delay Time
14 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
25m Ω @ 28A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3000pF @ 25V
Current - Continuous Drain (Id) @ 25°C
57A Tc
Gate Charge (Qg) (Max) @ Vgs
190nC @ 10V
Rise Time
59ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
48 ns
Turn-Off Delay Time
58 ns
Continuous Drain Current (ID)
57A
Threshold Voltage
2V
JEDEC-95 Code
TO-247AC
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
0.025Ohm
Drain to Source Breakdown Voltage
100V
Dual Supply Voltage
100V
Recovery Time
320 ns
Max Junction Temperature (Tj)
175°C
Nominal Vgs
4 V
Height
24.99mm
Length
15.875mm
Width
5.3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead, Lead Free

Description

IRFP3710PBF Description
The IRFP3710PBF transistor features a high packing density for reduced on-resistance, as well as a double-sided cooling package with low junction to case thermal resistance for increased current handling.

IRFP3710PBF Features
Thermal resistance is particularly low at the top and bottom connections.
Free of lead.

IRFP3710PBF Applications
Switching applications

IRFP3710PBF More Descriptions

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.025Ohm;ID 57A;TO-247AC;PD 200W;VGS /-20V
Single N-Channel 100 V 0.025 Ohm 190 nC HEXFET® Power Mosfet - TO-247-3AC
100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHSInfineon SCT
Power Field-Effect Transistor, 57A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, 100V, 51A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:57A; Drain Source Voltage Vds:100V; On Resistance Rds(on):25mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:200W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:57A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.83°C/W; Package / Case:TO-247AC; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:180A; Termination Type:Through Hole; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

Product Comparison

The three parts on the right have similar specifications to IRFP3710PBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Additional Feature

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Dual Supply Voltage

Recovery Time

Max Junction Temperature (Tj)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Weight

Max Operating Temperature

Min Operating Temperature

Drain to Source Voltage (Vdss)

Input Capacitance

Drain to Source Resistance

Rds On Max

View Compare
IRFP3710PBF

Infineon Technologies

12 Weeks

Through Hole

Through Hole

TO-247-3

3

SILICON

-55°C~175°C TJ

Bulk

HEXFET®

1998

Active

1 (Unlimited)

3

Through Hole

EAR99

AVALANCHE RATED

100V

MOSFET (Metal Oxide)

57A

1

1

200W Tc

Single

ENHANCEMENT MODE

180W

DRAIN

14 ns

N-Channel

SWITCHING

25m Ω @ 28A, 10V

4V @ 250μA

3000pF @ 25V

57A Tc

190nC @ 10V

59ns

10V

±20V

48 ns

58 ns

57A

2V

TO-247AC

20V

0.025Ohm

100V

100V

320 ns

175°C

4 V

24.99mm

15.875mm

5.3mm

No SVHC

No

ROHS3 Compliant

Contains Lead, Lead Free

-

-

-

-

-

-

-

-

-
IRFP350LC

Vishay Siliconix

-

Through Hole

Through Hole

TO-247-3

3

-

-55°C~150°C TJ

Tube

-

2016

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

1

1

190W Tc

Single

-

190W

-

14 ns

N-Channel

-

300mOhm @ 9.6A, 10V

4V @ 250μA

2200pF @ 25V

16A Tc

76nC @ 10V

54ns

10V

±30V

35 ns

33 ns

16A

4V

-

30V

-

400V

-

-

-

4 V

20.7mm

15.87mm

5.31mm

Unknown

No

Non-RoHS Compliant

-

TO-247-3

38.000013g

150°C

-55°C

400V

2.2nF

300mOhm

300 mΩ

IRFP3710PBF vs IRFP350LC
IRFP450B

Fairchild/ON Semiconductor

-

-

Through Hole

TO-3P-3, SC-65-3

-

-

-55°C~150°C TJ

Tube

-

2001

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

205W Tc

-

-

-

-

-

N-Channel

-

390mOhm @ 7A, 10V

4V @ 250μA

3800pF @ 25V

14A Tc

113nC @ 10V

-

10V

±30V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

TO-3P

-

-

-

500V

-

-

-

IRFP3710PBF vs IRFP450B
IRFP344PBF

Vishay Siliconix

-

Through Hole

Through Hole

TO-247-3

3

-

-55°C~150°C TJ

Tube

-

1997

Obsolete

1 (Unlimited)

-

-

-

-

450V

MOSFET (Metal Oxide)

9.5A

-

1

150W Tc

Single

-

150W

-

8.7 ns

N-Channel

-

630mOhm @ 5.7A, 10V

4V @ 250μA

1400pF @ 25V

9.5A Tc

80nC @ 10V

28ns

10V

±20V

27 ns

58 ns

9.5A

4V

-

20V

-

450V

-

-

-

-

20.7mm

15.87mm

5.31mm

Unknown

-

ROHS3 Compliant

Lead Free

TO-247-3

38.000013g

150°C

-55°C

450V

1.4nF

630mOhm

630 mΩ

IRFP3710PBF vs IRFP344PBF

Certification

Related parts for IRFP3710PBF

IRFP250

IXYS

MOSFET N-CH 200V 30A TO-247AD
IRFP450

Vishay Siliconix

MOSFET N-CH 500V 14A TO-247AC
IRFP064VPBF

Infineon Technologies

MOSFET N-CH 60V 130A TO-247AC
IRFP054

Vishay Siliconix

MOSFET N-CH 60V 70A TO-247AC
IRFP150

Vishay Siliconix

MOSFET N-CH 100V 41A TO-247AC
IRFP350LC

Vishay Siliconix

MOSFET N-CH 400V 16A TO-247AC
IRFP450B

Fairchild/ON Semiconductor

MOSFET N-CH 500V 14A TO-3
IRFP344PBF

Vishay Siliconix

MOSFET N-CH 450V 9.5A TO-247AC
IRFP32N50K

Vishay Siliconix

MOSFET N-CH 500V 32A TO-247AC
IRFP350

Vishay Siliconix

MOSFET N-CH 400V 16A TO-247AC

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IRFP3710PBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRFP3710PBF DISTI #IRFP3710PBF	Infineon Technologies AG	Trans MOSFET N-CH 100V 57A 3-Pin(3 Tab) TO-247AC T RoHS: Compliant	300	1 $1.9747 10 $1.7026 100 $1.2212
IRFP3710PBF DISTI #IRFP3710PBF	Infineon Technologies AG	MOSFET N-CH 100V 57A TO-247AC RoHS: Compliant	3918	1 $2.9 10 $2.615 100 $2.1013 500 $1.63432 1000 $1.35416
IRFP3710PBF DISTI #IRFP3710PBF	Infineon Technologies AG	Trans MOSFET N-CH 100V 57A 3-Pin(3 Tab) TO-247AC T RoHS: Compliant	360	7 $3.9653 10 $3.5318 50 $2.8815 100 $2.4352
IRFP3710PBF DISTI #IRFP3710PBF	Infineon Technologies AG	Trans MOSFET N-CH 100V 57A 3-Pin(3 Tab) TO-247AC T RoHS: Compliant	300	7 $1.9745 10 $1.7037 100 $1.2025
IRFP3710PBF DISTI #IRFP3710PBF	Infineon Technologies AG	Trans MOSFET N-CH 100V 57A 3-Pin(3 Tab) TO-247AC T RoHS: Compliant	65	13 $1.0848 100 $1.0176 500 $0.9216
IRFP3710PBF DISTI #IRFP3710PBF	Infineon Technologies AG	Trans MOSFET N-CH 100V 57A 3-Pin(3 Tab) TO-247AC - RoHS: Compliant	525	1 $1.5059 10 $1.3999 25 $1.3959 50 $1.3929 100 $1.1859 500 $0.9249 1000 $0.8589
IRFP3710PBF DISTI #IRFP3710PBF	Infineon Technologies AG	N CHANNEL MOSFET, 100V, 57A, TO-247AC, Transistor	271	1 $2.59 10 $2.23 100 $1.82
IRFP3710PBF. DISTI #IRFP3710PBF.	Infineon Technologies AG	N CHANNEL MOSFET, 100V, 57A, TO-247AC, Transistor	0	1 $2.59 10 $2.23 100 $1.82
IRFP3710PBF DISTI #IRFP3710PBF	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 100V, RDS(ON) 0.025O RoHS: Compliant	43	1 $2.71 10 $2.39 100 $2.09 500 $1.81 1000 $1.6
IRFP3710PBF DISTI #IRFP3710PBF	Infineon Technologies AG	MOSFET MOSFT 100V 51A 250mOhm 66.7nCAC RoHS: Compliant	890	1 $2.5 10 $2.13 100 $1.7
IRFP3710PBF DISTI #IRFP3710PBF	Infineon Technologies AG	Single N-Channel 100 V 0.025 Ohm 190 nC HEXFET Pow RoHS: Compliant	1205	10 $1.35 100 $1.21 500 $1.06
IRFP3710PBF DISTI #IRFP3710PBF	Infineon Technologies AG	MOSFET N-CHANNEL 100V 57A TO247AC, EA	1188	1 $2.7 13 $1.55
IRFP3710PBF DISTI #IRFP3710PBF	Infineon Technologies AG	MOSFET N-CHANNEL 100V 57A TO247AC, TU	500	25 $1.58 125 $1.225 250 $1.2
IRFP3710PBF DISTI #IRFP3710PBF	Infineon Technologies AG		80	1 $6.3 17 $4.2 61 $3.885
IRFP3710PBF DISTI #IRFP3710PBF	International Rectifier		100
IRFP3710PBF DISTI #IRFP3710PBF	Infineon Technologies AG	N-CH 100V 51A 25mOhm TO247 RoHS: Compliant	1200	25 $1.27 75 $1.21 150 $1.1291 325 $1.0198 400 $0.9834
IRFP3710PBF DISTI #IRFP3710PBF	Infineon Technologies AG	RoHS(ship within 1day)	100	1 $4 10 $3.28 50 $2.64 100 $2.26 500 $2.14 1000 $2.1
IRFP3710PBF DISTI #IRFP3710PBF	Infineon Technologies AG	100V,25m,57A,N-Channel Power MOSFET	400	1 $1.96 100 $1.64 500 $1.45 1000 $1.4
IRFP3710PBF DISTI #IRFP3710PBF	International Rectifier	RoHS: Compliant	24
IRFP3710PBF DISTI #IRFP3710PBF	Infineon Technologies AG	N-Ch 100V 57A 200W 0,025R TO247AC RoHS: Compliant	2640	5 $1.55 25 $0.951 100 $0.751 200 $0.723
IRFP3710PBF DISTI #IRFP3710PBF	Infineon Technologies AG		420
IRFP3710PBF DISTI #IRFP3710PBF	Infineon Technologies AG		115
IRFP3710PBF DISTI #IRFP3710PBF	Infineon Technologies AG	Trans MOSFET N-CH 100V 57A 3-Pin(3 Tab) TO-247AC T RoHS: Compliant	400	10 $1.7472 100 $1.4726
IRFP3710PBF DISTI #IRFP3710PBF	Infineon Technologies AG	Trans MOSFET N-CH 100V 57A 3-Pin(3 Tab) TO-247AC T RoHS: Compliant	360	1 $3.11 10 $2.77 50 $2.26 100 $2.25
IRFP3710PBF DISTI #IRFP3710PBF	Infineon Technologies AG	Trans MOSFET N-CH 100V 57A 3-Pin(3 Tab) TO-247AC T RoHS: Compliant	77	1 $5.37 10 $1.95 50 $1.74
IRFP3710PBF DISTI #IRFP3710PBF	Infineon Technologies AG	MOSFET, N, 100V, 51A, TO-247AC RoHS: Compliant	903	1 $3.96 10 $3.38 100 $2.69
IRFP3710PBF DISTI #IRFP3710PBF	Infineon Technologies AG	MOSFET, N, 100V, 51A, TO-247AC RoHS: Compliant	908	1 $2.19 10 $1.58 100 $1.25 250 $1.22 500 $1.16

IRFP371~~(2)~~
IRFP37~~(2)~~
IRFP3~~(46)~~
IRFP~~(73)~~
IRF~~(69)~~

Infineon Technologies IRFP3710PBF

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