IRFP360

Vishay Siliconix IRFP360

Part Number:
IRFP360
Manufacturer:
Vishay Siliconix
Ventron No:
2488236-IRFP360
Description:
MOSFET N-CH 400V 23A TO-247AC
ECAD Model:
Datasheet:
IRFP360

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Specifications
Vishay Siliconix IRFP360 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFP360.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-247-3
  • Weight
    38.000013g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2016
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Number of Channels
    1
  • Power Dissipation-Max
    280W Tc
  • Element Configuration
    Single
  • Turn On Delay Time
    18 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    200mOhm @ 14A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    4500pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    23A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    210nC @ 10V
  • Rise Time
    79ns
  • Drain to Source Voltage (Vdss)
    400V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    67 ns
  • Turn-Off Delay Time
    100 ns
  • Continuous Drain Current (ID)
    23A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    400V
  • Input Capacitance
    4.5nF
  • Drain to Source Resistance
    200mOhm
  • Rds On Max
    200 mΩ
  • Height
    20.7mm
  • Length
    15.87mm
  • Width
    5.31mm
  • RoHS Status
    Non-RoHS Compliant
Description
IRFP360 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4500pF @ 25V.This device has a continuous drain current (ID) of [23A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=400V, the drain-source breakdown voltage is 400V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 100 ns.MOSFETs have 200mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 18 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 400V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IRFP360 Features
a continuous drain current (ID) of 23A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 100 ns
single MOSFETs transistor is 200mOhm
a 400V drain to source voltage (Vdss)


IRFP360 Applications
There are a lot of Vishay Siliconix
IRFP360 applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IRFP360 More Descriptions
Trans MOSFET N-CH 400V 23A 3-Pin(3 Tab) TO-247AC
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:400V; Continuous Drain Current, Id:23A; On-Resistance, Rds(on):200mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-247AC; Drain Source On Resistance @ 10V:200mohm RoHS Compliant: No
MOSFET, N TO-247; Transistor type:MOSFET; Current, Id cont:23A; Resistance, Rds on:0.2R; Case style:TO-247AC; Current, Idm pulse:92A; Pins, No. of:3; Pitch, lead:5.45mm; Power dissipation:250W; Power, Pd:250W; Temperature, current:25°C; Temperature, full power rating:25°C; Transistor polarity:N; Transistors, No. of:1; Voltage, Vds max:400V
Product Comparison
The three parts on the right have similar specifications to IRFP360.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    RoHS Status
    Voltage - Rated DC
    Current Rating
    Radiation Hardening
    Lead Free
    Power Dissipation
    View Compare
  • IRFP360
    IRFP360
    Through Hole
    Through Hole
    TO-247-3
    3
    TO-247-3
    38.000013g
    -55°C~150°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    MOSFET (Metal Oxide)
    1
    280W Tc
    Single
    18 ns
    N-Channel
    200mOhm @ 14A, 10V
    4V @ 250μA
    4500pF @ 25V
    23A Tc
    210nC @ 10V
    79ns
    400V
    10V
    ±20V
    67 ns
    100 ns
    23A
    20V
    400V
    4.5nF
    200mOhm
    200 mΩ
    20.7mm
    15.87mm
    5.31mm
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
  • IRFP450B
    -
    Through Hole
    TO-3P-3, SC-65-3
    -
    TO-3P
    -
    -55°C~150°C TJ
    Tube
    2001
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    205W Tc
    -
    -
    N-Channel
    390mOhm @ 7A, 10V
    4V @ 250μA
    3800pF @ 25V
    14A Tc
    113nC @ 10V
    -
    500V
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFP32N50K
    Through Hole
    Through Hole
    TO-247-3
    -
    TO-247-3
    38.000013g
    -55°C~150°C TJ
    Tube
    2014
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    MOSFET (Metal Oxide)
    1
    460W Tc
    Single
    28 ns
    N-Channel
    160mOhm @ 32A, 10V
    5V @ 250μA
    5280pF @ 25V
    32A Tc
    190nC @ 10V
    120ns
    500V
    10V
    ±30V
    54 ns
    48 ns
    32A
    30V
    500V
    5.28nF
    160mOhm
    160 mΩ
    20.7mm
    15.87mm
    5.31mm
    Non-RoHS Compliant
    500V
    32A
    No
    Contains Lead
    -
  • IRFP350
    Through Hole
    Through Hole
    TO-247-3
    3
    TO-247-3
    38.000013g
    -55°C~150°C TJ
    Tube
    2015
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    MOSFET (Metal Oxide)
    1
    190W Tc
    Single
    16 ns
    N-Channel
    300mOhm @ 9.6A, 10V
    4V @ 250μA
    2600pF @ 25V
    16A Tc
    150nC @ 10V
    49ns
    400V
    10V
    ±20V
    47 ns
    87 ns
    16A
    20V
    400V
    2.6nF
    300mOhm
    300 mΩ
    20.7mm
    15.87mm
    5.31mm
    Non-RoHS Compliant
    400V
    16A
    -
    Contains Lead
    190W
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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