Vishay Siliconix IRFP360
- Part Number:
- IRFP360
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2488236-IRFP360
- Description:
- MOSFET N-CH 400V 23A TO-247AC
- Datasheet:
- IRFP360
Vishay Siliconix IRFP360 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFP360.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Supplier Device PackageTO-247-3
- Weight38.000013g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2016
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Channels1
- Power Dissipation-Max280W Tc
- Element ConfigurationSingle
- Turn On Delay Time18 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs200mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds4500pF @ 25V
- Current - Continuous Drain (Id) @ 25°C23A Tc
- Gate Charge (Qg) (Max) @ Vgs210nC @ 10V
- Rise Time79ns
- Drain to Source Voltage (Vdss)400V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)67 ns
- Turn-Off Delay Time100 ns
- Continuous Drain Current (ID)23A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage400V
- Input Capacitance4.5nF
- Drain to Source Resistance200mOhm
- Rds On Max200 mΩ
- Height20.7mm
- Length15.87mm
- Width5.31mm
- RoHS StatusNon-RoHS Compliant
IRFP360 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4500pF @ 25V.This device has a continuous drain current (ID) of [23A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=400V, the drain-source breakdown voltage is 400V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 100 ns.MOSFETs have 200mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 18 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 400V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRFP360 Features
a continuous drain current (ID) of 23A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 100 ns
single MOSFETs transistor is 200mOhm
a 400V drain to source voltage (Vdss)
IRFP360 Applications
There are a lot of Vishay Siliconix
IRFP360 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4500pF @ 25V.This device has a continuous drain current (ID) of [23A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=400V, the drain-source breakdown voltage is 400V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 100 ns.MOSFETs have 200mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 18 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 400V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRFP360 Features
a continuous drain current (ID) of 23A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 100 ns
single MOSFETs transistor is 200mOhm
a 400V drain to source voltage (Vdss)
IRFP360 Applications
There are a lot of Vishay Siliconix
IRFP360 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IRFP360 More Descriptions
Trans MOSFET N-CH 400V 23A 3-Pin(3 Tab) TO-247AC
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:400V; Continuous Drain Current, Id:23A; On-Resistance, Rds(on):200mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-247AC; Drain Source On Resistance @ 10V:200mohm RoHS Compliant: No
MOSFET, N TO-247; Transistor type:MOSFET; Current, Id cont:23A; Resistance, Rds on:0.2R; Case style:TO-247AC; Current, Idm pulse:92A; Pins, No. of:3; Pitch, lead:5.45mm; Power dissipation:250W; Power, Pd:250W; Temperature, current:25°C; Temperature, full power rating:25°C; Transistor polarity:N; Transistors, No. of:1; Voltage, Vds max:400V
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:400V; Continuous Drain Current, Id:23A; On-Resistance, Rds(on):200mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-247AC; Drain Source On Resistance @ 10V:200mohm RoHS Compliant: No
MOSFET, N TO-247; Transistor type:MOSFET; Current, Id cont:23A; Resistance, Rds on:0.2R; Case style:TO-247AC; Current, Idm pulse:92A; Pins, No. of:3; Pitch, lead:5.45mm; Power dissipation:250W; Power, Pd:250W; Temperature, current:25°C; Temperature, full power rating:25°C; Transistor polarity:N; Transistors, No. of:1; Voltage, Vds max:400V
The three parts on the right have similar specifications to IRFP360.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyNumber of ChannelsPower Dissipation-MaxElement ConfigurationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRoHS StatusVoltage - Rated DCCurrent RatingRadiation HardeningLead FreePower DissipationView Compare
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IRFP360Through HoleThrough HoleTO-247-33TO-247-338.000013g-55°C~150°C TJTube2016Obsolete1 (Unlimited)150°C-55°CMOSFET (Metal Oxide)1280W TcSingle18 nsN-Channel200mOhm @ 14A, 10V4V @ 250μA4500pF @ 25V23A Tc210nC @ 10V79ns400V10V±20V67 ns100 ns23A20V400V4.5nF200mOhm200 mΩ20.7mm15.87mm5.31mmNon-RoHS Compliant------
-
-Through HoleTO-3P-3, SC-65-3-TO-3P--55°C~150°C TJTube2001Obsolete1 (Unlimited)--MOSFET (Metal Oxide)-205W Tc--N-Channel390mOhm @ 7A, 10V4V @ 250μA3800pF @ 25V14A Tc113nC @ 10V-500V10V±30V-----------------
-
Through HoleThrough HoleTO-247-3-TO-247-338.000013g-55°C~150°C TJTube2014Obsolete1 (Unlimited)150°C-55°CMOSFET (Metal Oxide)1460W TcSingle28 nsN-Channel160mOhm @ 32A, 10V5V @ 250μA5280pF @ 25V32A Tc190nC @ 10V120ns500V10V±30V54 ns48 ns32A30V500V5.28nF160mOhm160 mΩ20.7mm15.87mm5.31mmNon-RoHS Compliant500V32ANoContains Lead-
-
Through HoleThrough HoleTO-247-33TO-247-338.000013g-55°C~150°C TJTube2015Obsolete1 (Unlimited)150°C-55°CMOSFET (Metal Oxide)1190W TcSingle16 nsN-Channel300mOhm @ 9.6A, 10V4V @ 250μA2600pF @ 25V16A Tc150nC @ 10V49ns400V10V±20V47 ns87 ns16A20V400V2.6nF300mOhm300 mΩ20.7mm15.87mm5.31mmNon-RoHS Compliant400V16A-Contains Lead190W
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