Vishay Siliconix IRFP350PBF
- Part Number:
- IRFP350PBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2479933-IRFP350PBF
- Description:
- MOSFET N-CH 400V 16A TO-247AC
- Datasheet:
- IRFP350PBF
Vishay Siliconix IRFP350PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFP350PBF.
- Factory Lead Time8 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Supplier Device PackageTO-247-3
- Weight38.000013g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2011
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance300mOhm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC400V
- TechnologyMOSFET (Metal Oxide)
- Current Rating16A
- Number of Elements1
- Number of Channels1
- Voltage400V
- Power Dissipation-Max190W Tc
- Element ConfigurationSingle
- Current16A
- Power Dissipation190W
- Turn On Delay Time16 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs300mOhm @ 9.6A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2600pF @ 25V
- Current - Continuous Drain (Id) @ 25°C16A Tc
- Gate Charge (Qg) (Max) @ Vgs150nC @ 10V
- Rise Time49ns
- Drain to Source Voltage (Vdss)400V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)47 ns
- Turn-Off Delay Time87 ns
- Continuous Drain Current (ID)16A
- Threshold Voltage4V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage400V
- Input Capacitance2.6nF
- Recovery Time570 ns
- Drain to Source Resistance300mOhm
- Rds On Max300 mΩ
- Nominal Vgs2 V
- Height20.7mm
- Length15.87mm
- Width5.31mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFP350PBF Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2600pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 16A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=400V. And this device has 400V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 87 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 300mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 16 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 4V threshold voltage. Operating this transistor requires a 400V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IRFP350PBF Features
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 87 ns
single MOSFETs transistor is 300mOhm
a threshold voltage of 4V
a 400V drain to source voltage (Vdss)
IRFP350PBF Applications
There are a lot of Vishay Siliconix
IRFP350PBF applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2600pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 16A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=400V. And this device has 400V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 87 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 300mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 16 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 4V threshold voltage. Operating this transistor requires a 400V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IRFP350PBF Features
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 87 ns
single MOSFETs transistor is 300mOhm
a threshold voltage of 4V
a 400V drain to source voltage (Vdss)
IRFP350PBF Applications
There are a lot of Vishay Siliconix
IRFP350PBF applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
IRFP350PBF More Descriptions
Single N-Channel 400 V 0.3 Ohms Flange Mount Power Mosfet - TO-247AC
Power Field-Effect Transistor, 16A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
N Channel Mosfet, 400V, 16A, To-247; Channel Type:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:16A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Msl:- Rohs Compliant: No |Vishay IRFP350PBF.
MOSFET, N, 400V, 16A, TO-247AC; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:400V; Current, Id Cont:16A; Resistance, Rds On:0.3ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-247AC; Termination Type:Through Hole; Current, Idm Pulse:64A; Lead Spacing:5.45mm; No. of Pins:3; Power Dissipation:190W; Power, Pd:180W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:0.65°C/W; Transistors, No. of:1; Voltage, Vds Max:400V
Power Field-Effect Transistor, 16A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
N Channel Mosfet, 400V, 16A, To-247; Channel Type:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:16A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Msl:- Rohs Compliant: No |Vishay IRFP350PBF.
MOSFET, N, 400V, 16A, TO-247AC; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:400V; Current, Id Cont:16A; Resistance, Rds On:0.3ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-247AC; Termination Type:Through Hole; Current, Idm Pulse:64A; Lead Spacing:5.45mm; No. of Pins:3; Power Dissipation:190W; Power, Pd:180W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:0.65°C/W; Transistors, No. of:1; Voltage, Vds Max:400V
The three parts on the right have similar specifications to IRFP350PBF.
-
ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsNumber of ChannelsVoltagePower Dissipation-MaxElement ConfigurationCurrentPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceRecovery TimeDrain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthREACH SVHCRoHS StatusLead FreeSurface MountTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinRadiation HardeningView Compare
-
IRFP350PBF8 WeeksTinThrough HoleThrough HoleTO-247-33TO-247-338.000013g-55°C~150°C TJTube2011Active1 (Unlimited)300mOhm150°C-55°C400VMOSFET (Metal Oxide)16A11400V190W TcSingle16A190W16 nsN-Channel300mOhm @ 9.6A, 10V4V @ 250μA2600pF @ 25V16A Tc150nC @ 10V49ns400V10V±20V47 ns87 ns16A4V20V400V2.6nF570 ns300mOhm300 mΩ2 V20.7mm15.87mm5.31mmNo SVHCROHS3 CompliantLead Free----------------------
-
---Through HoleTO-247-3----55°C~175°C TJTube-Obsolete1 (Unlimited)----MOSFET (Metal Oxide)-1--230W Tc----N-Channel55m Ω @ 25A, 10V4V @ 250μA2.8pF @ 25V41A Tc140nC @ 10V-100V10V±20V---------------Non-RoHS Compliant-NOSILICONe0no3TIN LEADSINGLENOT SPECIFIEDunknownNOT SPECIFIEDR-PSFM-T3COMMERCIALSINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING40A0.055Ohm160A100V-
-
--Through HoleThrough HoleTO-247-33TO-247-338.000013g-55°C~150°C TJTube2016Obsolete1 (Unlimited)-150°C-55°C-MOSFET (Metal Oxide)-11-190W TcSingle-190W14 nsN-Channel300mOhm @ 9.6A, 10V4V @ 250μA2200pF @ 25V16A Tc76nC @ 10V54ns400V10V±30V35 ns33 ns16A4V30V400V2.2nF-300mOhm300 mΩ4 V20.7mm15.87mm5.31mmUnknownNon-RoHS Compliant---------------------No
-
--Through HoleThrough HoleTO-247-3-TO-247-338.000013g-55°C~150°C TJTube2014Obsolete1 (Unlimited)-150°C-55°C500VMOSFET (Metal Oxide)32A-1-460W TcSingle--28 nsN-Channel160mOhm @ 32A, 10V5V @ 250μA5280pF @ 25V32A Tc190nC @ 10V120ns500V10V±30V54 ns48 ns32A-30V500V5.28nF-160mOhm160 mΩ-20.7mm15.87mm5.31mm-Non-RoHS CompliantContains Lead--------------------No
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
27 March 2024
STM32F030K6T6 Microcontroller Symbol, Characteristics, Specifications and Other Details
Ⅰ. Description of STM32F030K6T6Ⅱ. Functional characteristics of STM32F030K6T6Ⅲ. STM32F030K6T6 specificationsⅣ. Structure of STM32F030K6T6Ⅴ. STM32F030K6T6 symbol, footprint and pin configurationⅥ. STM32F030K6T6 development tools and ecosystemⅦ. Application cases of STM32F030K6T6STM32F030K6T6... -
28 March 2024
An Introduction to TPS54302DDCR Synchronous Buck Converter
Ⅰ. What is TPS54302DDCR?Ⅱ. Characteristics of TPS54302DDCRⅢ. Simplified schematic of TPS54302DDCRⅣ. What are the advantages of TPS54302DDCR?Ⅴ. Technical parameters of TPS54302DDCRⅥ. Pin configuration and functions of TPS54302DDCRⅦ. Protection... -
28 March 2024
UCC27517DBVR Gate Driver: Replacements, Advantages, Application and Package
Ⅰ. UCC27517DBVR overviewⅡ. Technical parameters of UCC27517DBVRⅢ. UCC27517DBVR's typical characteristicsⅣ. What are the advantages of UCC27517DBVR compared with other gate driver ICs?Ⅴ. What applications is the UCC27517DBVR typically... -
29 March 2024
TLP2362 Optocoupler Characteristics, Specifications, Working Principle and More
Ⅰ. Overview of TLP2362Ⅱ. Characteristics of TLP2362Ⅲ. Specifications of TLP2362Ⅳ. Recommended operating conditions of TLP2362Ⅴ. How does TLP2362 work?Ⅵ. Internal equivalent circuit of TLP2362Ⅶ. Storage and soldering of...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.