Infineon Technologies IRFP2907PBF

Name: IRFP2907PBF
Brand: Infineon Technologies
SKU: 2479125-IRFP2907PBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFP2907PBF

Manufacturer:: Infineon Technologies

Ventron No:: 2479125-IRFP2907PBF

Description:: MOSFET N-CH 75V 209A TO247AC

ECAD Model:

Datasheet:: IRFP2907PBF

Specifications

Infineon Technologies IRFP2907PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFP2907PBF.

Factory Lead Time
12 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2004
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Resistance
4.5MOhm
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Voltage - Rated DC
75V
Technology
MOSFET (Metal Oxide)
Current Rating
209A
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
470W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
470W
Case Connection
DRAIN
Turn On Delay Time
23 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
4.5m Ω @ 125A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
13000pF @ 25V
Current - Continuous Drain (Id) @ 25°C
209A Tc
Gate Charge (Qg) (Max) @ Vgs
620nC @ 10V
Rise Time
190ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
130 ns
Turn-Off Delay Time
130 ns
Continuous Drain Current (ID)
209A
Threshold Voltage
4V
JEDEC-95 Code
TO-247AC
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
90A
Drain to Source Breakdown Voltage
75V
Pulsed Drain Current-Max (IDM)
840A
Dual Supply Voltage
75V
Recovery Time
210 ns
Max Junction Temperature (Tj)
175°C
Nominal Vgs
4 V
Height
24.99mm
Length
15.87mm
Width
5.3086mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead, Lead Free

Description

IRFP2907PBF Description
This HEXFET power MOSFET IRFP2907PBF strip plane design uses the latest technology to achieve extremely low on-resistance per silicon area. Other features of the HEXFET power MOSFET include a 175 °C junction operating temperature, fast switching speed and an improved repeated avalanche rating. The combination of these advantages makes the design an extremely efficient and reliable device used in a variety of applications.
IRFP2907PBF Features Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Lead-free
IRFP2907PBF Applications Telecom applications requiring soft star

IRFP2907PBF More Descriptions

MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 4.5Milliohms;ID 209A;TO-247AC;PD 470W;-55de
Single N-Channel 75 V 4.5 mOhm 620 nC HEXFET® Power Mosfet - TO-247AC
75V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHSInfineon SCT
IRFP2907PBF,MOSFET, 75V, 177A, 4.5 MOHM, 410 NC QG, TO-247AC
Power Field-Effect Transistor, 90A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
N CH MOSFET, 75V, 209A, TO-247AC; Transi; Transistor Polarity:N Channel; Continuous Drain Current Id:209A; Drain Source Voltage Vds:75V; On Resistance Rds(on):4.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:470W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2012); Current Id Max:209A; Junction to Case Thermal Resistance A:0.45°C/W; Package / Case:TO-247AC; Power Dissipation Pd:470W; Power Dissipation Pd:330W; Pulse Current Idm:840A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

Product Comparison

The three parts on the right have similar specifications to IRFP2907PBF.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Additional Feature

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Dual Supply Voltage

Recovery Time

Max Junction Temperature (Tj)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Vgs(th) (Max) @ Id:

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Drain to Source Voltage (Vdss)

Input Capacitance

Drain to Source Resistance

Rds On Max

Weight

View Compare
IRFP2907PBF

Infineon Technologies

12 Weeks

Tin

Through Hole

Through Hole

TO-247-3

3

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2004

Active

1 (Unlimited)

3

Through Hole

EAR99

4.5MOhm

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

75V

MOSFET (Metal Oxide)

209A

1

1

470W Tc

Single

ENHANCEMENT MODE

470W

DRAIN

23 ns

N-Channel

SWITCHING

4.5m Ω @ 125A, 10V

4V @ 250μA

13000pF @ 25V

209A Tc

620nC @ 10V

190ns

10V

±20V

130 ns

130 ns

209A

4V

TO-247AC

20V

90A

75V

840A

75V

210 ns

175°C

4 V

24.99mm

15.87mm

5.3086mm

No SVHC

No

ROHS3 Compliant

Contains Lead, Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRFP450

Vishay Siliconix

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

4V @ 250µA

MOSFET (Metal Oxide)

TO-247-3

-

400 mOhm @ 8.4A, 10V

190W (Tc)

Tube

TO-247-3

-55°C ~ 150°C (TJ)

Through Hole

2600pF @ 25V

150nC @ 10V

N-Channel

-

500V

14A (Tc)

-

-

-

-

-

-

-

-

IRFP2907PBF vs IRFP450
IRFP064VPBF

Infineon Technologies

-

-

Through Hole

Through Hole

TO-247-3

3

-

-55°C~175°C TJ

Bulk

HEXFET®

2004

Obsolete

1 (Unlimited)

-

-

-

-

-

60V

MOSFET (Metal Oxide)

130A

1

-

250W Tc

Single

-

250W

-

26 ns

N-Channel

-

5.5mOhm @ 78A, 10V

4V @ 250μA

6760pF @ 25V

130A Tc

260nC @ 10V

200ns

10V

±20V

150 ns

100 ns

130A

-

-

20V

-

60V

-

-

-

-

4 V

-

-

-

No SVHC

No

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

TO-247AC

175°C

-55°C

60V

6.76nF

5.5mOhm

5.5 mΩ

-

IRFP2907PBF vs IRFP064VPBF
IRFP344PBF

Vishay Siliconix

-

-

Through Hole

Through Hole

TO-247-3

3

-

-55°C~150°C TJ

Tube

-

1997

Obsolete

1 (Unlimited)

-

-

-

-

-

450V

MOSFET (Metal Oxide)

9.5A

-

1

150W Tc

Single

-

150W

-

8.7 ns

N-Channel

-

630mOhm @ 5.7A, 10V

4V @ 250μA

1400pF @ 25V

9.5A Tc

80nC @ 10V

28ns

10V

±20V

27 ns

58 ns

9.5A

4V

-

20V

-

450V

-

-

-

-

-

20.7mm

15.87mm

5.31mm

Unknown

-

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

TO-247-3

150°C

-55°C

450V

1.4nF

630mOhm

630 mΩ

38.000013g

IRFP2907PBF vs IRFP344PBF

Certification

Related parts for IRFP2907PBF

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IRFP2907PBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRFP2907PBF DISTI #IRFP2907PBF	Infineon Technologies AG	Trans MOSFET N-CH Si 75V 209A 3-Pin(3 Tab) TO-247A RoHS: Compliant	60	1 $4.58 10 $4.017 100 $3.468 250 $2.698
IRFP2907PBF DISTI #IRFP2907PBF	Infineon Technologies AG	MOSFET N-CH 75V 209A TO247AC RoHS: Compliant	1179	1 $6.84 10 $6.148 400 $4.65315 800 $3.848 1200 $3.61795
IRFP2907PBF DISTI #IRFP2907PBF	Infineon Technologies AG	Trans MOSFET N-CH Si 75V 209A 3-Pin(3 Tab) TO-247A RoHS: Compliant	1950	6 $3.1872 50 $2.8128 200 $2.5152
IRFP2907PBF DISTI #IRFP2907PBF	Infineon Technologies AG	Trans MOSFET N-CH Si 75V 209A 3-Pin(3 Tab) TO-247A RoHS: Compliant	60	3 $4.58 10 $4.017
IRFP2907PBF DISTI #IRFP2907PBF	Infineon Technologies AG	Trans MOSFET N-CH 75V 209A 3-Pin(3 Tab) TO-247AC ( RoHS: Compliant	0
IRFP2907PBF DISTI #IRFP2907PBF	Infineon Technologies AG	Trans MOSFET N-CH 75V 209A 3-Pin(3 Tab) TO-247AC - RoHS: Compliant	0	1 $2.39 10 $2.29 25 $2.29 50 $2.29 100 $2.19 500 $2.09 1000 $2.09
IRFP2907PBF. DISTI #IRFP2907PBF.	Infineon Technologies AG	Transistor Polarity:N Channel, Continuous Drain C	0	1 $5.54 10 $4.71 25 $4.5 50 $4.29 100 $4.08 250 $3.87
IRFP2907PBF DISTI #IRFP2907PBF	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 75V, RDS(ON) 4.5 Mil RoHS: Compliant	0	1 $6.048
IRFP2907PBF DISTI #IRFP2907PBF	Infineon Technologies AG	MOSFET 75V 1 N-CH HEXFET 4.5mOhms 410nC RoHS: Compliant	927	1 $5.54 10 $4.71 100 $4.08 250 $3.87
IRFP2907PBF DISTI #IRFP2907PBF	Infineon Technologies AG	MOSFET N-CHANNEL 75V 209A TO247AC, TU	25	25 $3.087 125 $2.696 250 $2.531
IRFP2907PBF DISTI #IRFP2907PBF	Infineon Technologies AG	MOSFET N-CHANNEL 75V 209A TO247AC, TU	314	13 $3.11
IRFP2907PBF DISTI #IRFP2907PBF	Infineon Technologies AG	MOSFET N-CHANNEL 75V 209A TO247AC, EA	434	1 $5.45 13 $3.11
IRFP2907PBF DISTI #IRFP2907PBF	International Rectifier		41
IRFP2907PBF DISTI #IRFP2907PBF	International Rectifier		150
IRFP2907PBF DISTI #IRFP2907PBF	Infineon Technologies AG	N-Ch 75V 209A 470W 0,0045R TO247AC RoHS: Compliant	1970	5 $2.68 25 $2.08 100 $1.88 200 $1.81
IRFP2907PBF DISTI #IRFP2907PBF	Infineon Technologies AG	N-CH 75V 209A 4,5mOhm TO247 RoHS: Compliant	0	25 $3.15 75 $2.96 125 $2.78 250 $2.51 400 $2.42
IRFP2907PBF DISTI #IRFP2907PBF	Infineon Technologies AG	RoHS(ship within 1day)	100
IRFP2907PBF DISTI #IRFP2907PBF	Infineon Technologies AG	PowerField-EffectTransistor,5.8AI(D),900V,2ohm,1-E RoHS: Compliant	67	50 $5.72 67 $5.2
IRFP2907PBF DISTI #IRFP2907PBF	Infineon Technologies AG	75V,4.5m,209A,N-Channel Power MOSFET	400	1 $4.4 100 $3.66 500 $3.23 1000 $3.14
IRFP2907PBF DISTI #IRFP2907PBF	International Rectifier	INSTOCK	400
IRFP2907PBF DISTI #IRFP2907PBF	Infineon Technologies AG		130
IRFP2907PBF DISTI #IRFP2907PBF	Infineon Technologies AG		438
IRFP2907PBF DISTI #IRFP2907PBF	Infineon Technologies AG	MOSFET, N-CH, 209A, 75V, TO-247AC-3 RoHS: Compliant	213	1 $5.75 10 $5.37 100 $4.75 250 $4.49 500 $4.26 1000 $4.05
IRFP2907PBF DISTI #IRFP2907PBF	Infineon Technologies AG	Trans MOSFET N-CH Si 75V 209A 3-Pin(3 Tab) TO-247A RoHS: Compliant	60	1 $4.541
IRFP2907PBF DISTI #IRFP2907PBF	Infineon Technologies AG	Trans MOSFET N-CH Si 75V 209A 3-Pin(3 Tab) TO-247A RoHS: Compliant	2300	1 $6.63 10 $4.3 50 $3.53 100 $3.24 500 $2.48 1000 $2.3
IRFP2907PBF DISTI #IRFP2907PBF	Infineon Technologies AG	MOSFET, N-CH, 209A, 75V, TO-247AC-3 RoHS: Compliant	226	1 $4.69 10 $3.12 100 $2.73 250 $2.56 500 $2.51

IRFP290~~(4)~~
IRFP29~~(4)~~
IRFP2~~(60)~~
IRFP~~(73)~~
IRF~~(69)~~

Infineon Technologies IRFP2907PBF

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