Infineon Technologies IRFP150NPBF

Name: IRFP150NPBF
Brand: Infineon Technologies
SKU: 2848969-IRFP150NPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFP150NPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2848969-IRFP150NPBF

Description:: MOSFET N-CH 100V 42A TO-247AC

ECAD Model:

Datasheet:: IRFP150NPBF

Specifications

Infineon Technologies IRFP150NPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFP150NPBF.

Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
1998
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Resistance
36mOhm
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
Subcategory
FET General Purpose Power
Voltage - Rated DC
100V
Technology
MOSFET (Metal Oxide)
Current Rating
42A
Lead Pitch
5.45mm
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
160W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
140W
Case Connection
DRAIN
Turn On Delay Time
11 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
36m Ω @ 23A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1900pF @ 25V
Current - Continuous Drain (Id) @ 25°C
42A Tc
Gate Charge (Qg) (Max) @ Vgs
110nC @ 10V
Rise Time
56ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
40 ns
Turn-Off Delay Time
45 ns
Continuous Drain Current (ID)
42A
Threshold Voltage
4V
JEDEC-95 Code
TO-247AC
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
100V
Dual Supply Voltage
100V
Avalanche Energy Rating (Eas)
420 mJ
Recovery Time
270 ns
Max Junction Temperature (Tj)
175°C
Nominal Vgs
4 V
Height
24.99mm
Length
15.875mm
Width
5.3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead, Lead Free

Description

IRFP150NPBF Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier T0-218 package because of its isolated mounting hole.

IRFP150NPBF Features
Advanced Process Technology
Dynamic dv/dt Rating
175 °C Operating Temperature
Fast Switching
Fully Avalanche Rated
ROHS3 Compliant
No SVHC
Contains Lead, Lead Free

IRFP150NPBF Applications
Switching Applications
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid

IRFP150NPBF More Descriptions

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.036Ohm;ID 42A;TO-247AC;PD 160W;VGS /-20V
Transistor MOSFET Negative Channel 100 Volt 42A 3-Pin(3 Tab) TO-247AC
Single N-Channel 100V 36 mOhm 110 nC HEXFET® Power Mosfet - TO-247AC
100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHSInfineon SCT
Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:42A; On Resistance, Rds(on):36mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-247AC ;RoHS Compliant: Yes
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
MOSFET, N, 100V, 39A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:100V; On Resistance Rds(on):36mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:42A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.1°C/W; Lead Spacing:5.45mm; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Pulse Current Idm:140A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

Product Comparison

The three parts on the right have similar specifications to IRFP150NPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Current Rating

Lead Pitch

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Avalanche Energy Rating (Eas)

Recovery Time

Max Junction Temperature (Tj)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Drain to Source Voltage (Vdss)

Input Capacitance

Drain to Source Resistance

Rds On Max

Weight

View Compare
IRFP150NPBF

Infineon Technologies

12 Weeks

Through Hole

Through Hole

TO-247-3

3

SILICON

-55°C~175°C TJ

Tube

HEXFET®

1998

Active

1 (Unlimited)

3

Through Hole

EAR99

36mOhm

AVALANCHE RATED, HIGH RELIABILITY

FET General Purpose Power

100V

MOSFET (Metal Oxide)

42A

5.45mm

1

1

160W Tc

Single

ENHANCEMENT MODE

140W

DRAIN

11 ns

N-Channel

SWITCHING

36m Ω @ 23A, 10V

4V @ 250μA

1900pF @ 25V

42A Tc

110nC @ 10V

56ns

10V

±20V

40 ns

45 ns

42A

4V

TO-247AC

20V

100V

100V

420 mJ

270 ns

175°C

4 V

24.99mm

15.875mm

5.3mm

No SVHC

No

ROHS3 Compliant

Contains Lead, Lead Free

-

-

-

-

-

-

-

-

-
IRFP064VPBF

Infineon Technologies

-

Through Hole

Through Hole

TO-247-3

3

-

-55°C~175°C TJ

Bulk

HEXFET®

2004

Obsolete

1 (Unlimited)

-

-

-

-

-

-

60V

MOSFET (Metal Oxide)

130A

-

1

-

250W Tc

Single

-

250W

-

26 ns

N-Channel

-

5.5mOhm @ 78A, 10V

4V @ 250μA

6760pF @ 25V

130A Tc

260nC @ 10V

200ns

10V

±20V

150 ns

100 ns

130A

-

-

20V

60V

-

-

-

-

4 V

-

-

-

No SVHC

No

RoHS Compliant

Lead Free

TO-247AC

175°C

-55°C

60V

6.76nF

5.5mOhm

5.5 mΩ

-

IRFP150NPBF vs IRFP064VPBF
IRFP350LC

Vishay Siliconix

-

Through Hole

Through Hole

TO-247-3

3

-

-55°C~150°C TJ

Tube

-

2016

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

1

1

190W Tc

Single

-

190W

-

14 ns

N-Channel

-

300mOhm @ 9.6A, 10V

4V @ 250μA

2200pF @ 25V

16A Tc

76nC @ 10V

54ns

10V

±30V

35 ns

33 ns

16A

4V

-

30V

400V

-

-

-

-

4 V

20.7mm

15.87mm

5.31mm

Unknown

No

Non-RoHS Compliant

-

TO-247-3

150°C

-55°C

400V

2.2nF

300mOhm

300 mΩ

38.000013g

IRFP150NPBF vs IRFP350LC
IRFP32N50K

Vishay Siliconix

-

Through Hole

Through Hole

TO-247-3

-

-

-55°C~150°C TJ

Tube

-

2014

Obsolete

1 (Unlimited)

-

-

-

-

-

-

500V

MOSFET (Metal Oxide)

32A

-

-

1

460W Tc

Single

-

-

-

28 ns

N-Channel

-

160mOhm @ 32A, 10V

5V @ 250μA

5280pF @ 25V

32A Tc

190nC @ 10V

120ns

10V

±30V

54 ns

48 ns

32A

-

-

30V

500V

-

-

-

-

-

20.7mm

15.87mm

5.31mm

-

No

Non-RoHS Compliant

Contains Lead

TO-247-3

150°C

-55°C

500V

5.28nF

160mOhm

160 mΩ

38.000013g

IRFP150NPBF vs IRFP32N50K

Certification

Related parts for IRFP150NPBF

IRFP250

IXYS

MOSFET N-CH 200V 30A TO-247AD
IRFP450

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IRFP064VPBF

Infineon Technologies

MOSFET N-CH 60V 130A TO-247AC
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IRFP350LC

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IRFP450B

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Vishay Siliconix

MOSFET N-CH 400V 16A TO-247AC

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IRFP150NPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRFP150NPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 100V 42A 3-Pin(3 Tab) TO-247AC T RoHS: Compliant	738	1 $1.3069 10 $1.16 100 $0.9822 500 $0.88 1000 $0.7016
IRFP150NPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 100V 42A 3-Pin(3 Tab) TO-247AC T RoHS: Compliant	641	1 $1.3069 10 $1.16 100 $0.9822 500 $0.88 1000 $0.7016
IRFP150NPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 100V 42A TO-247AC RoHS: Compliant	1421	1 $2.04 10 $1.852 400 $1.35345 800 $1.09183 1200 $1.01085
IRFP150NPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 100V 42A 3-Pin(3 Tab) TO-247AC T RoHS: Compliant	11398	16 $0.7248 150 $0.6768 750 $0.6144
IRFP150NPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 100V 42A 3-Pin(3 Tab) TO-247AC T RoHS: Compliant	800	10 $2.7125
IRFP150NPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 100V 42A 3-Pin(3 Tab) TO-247AC T RoHS: Compliant	738	11 $1.16 100 $0.9822 500 $0.88
IRFP150NPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 100V 42A 3-Pin(3 Tab) TO-247AC T RoHS: Compliant	641	10 $1.16 100 $0.9822 500 $0.88
IRFP150NPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 100V 42A 3-Pin(3 Tab) TO-247AC ( RoHS: Compliant	0
IRFP150NPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 100V 42A 3-Pin(3 Tab) TO-247AC - RoHS: Compliant	0	1 $1.1819 10 $1.0919 25 $1.0889 50 $1.0859 100 $1.0179 500 $0.9289 1000 $0.6499
IRFP150NPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 100V 42A 3-Pin(3 Tab) TO-247AC ( RoHS: Compliant	0	1 $1.1909 10 $1.0999 25 $1.0969 50 $1.0939 100 $0.9759 500 $0.8479 1000 $0.6549
IRFP150NPBF DISTI #	Infineon Technologies AG	N CHANNEL MOSFET, 100V, 42A, TO-247AC, Transistor	608	1 $1.76 10 $1.52 100 $1.24 500 $1.1 1000 $0.935 2500 $0.88 5000 $0.853
IRFP150NPBF. DISTI #	Infineon Technologies AG	PLANAR_MOSFETS ROHS COMPLIANT: YES	0	1 $1.8 10 $1.55 100 $1.26 500 $1.1 1000 $0.935 2500 $0.88 5000 $0.853
IRFP150NPBF DISTI #	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 100V, RDS(ON) 0.036O RoHS: Compliant	1960	1 $2.54 10 $2.25 100 $1.96 500 $1.7 1000 $1.5
IRFP150NPBF DISTI #	Infineon Technologies AG	Single N-Channel 100V 36 mOhm 110 nC HEXFET Power RoHS: Compliant	53525	15 $0.905 150 $0.81 750 $0.71
IRFP150NPBF DISTI #	Infineon Technologies AG	MOSFET MOSFT 100V 39A 36mOhm 73.3nCAC RoHS: Compliant	177	1 $1.67 10 $1.42 100 $1.14 500 $0.992 1000 $0.822 2500 $0.765
IRFP150NPBF DISTI #	International Rectifier	MOSFET Transistor, N-Channel, TO-247AC	157	1 $3 41 $1.125 134 $1.05
IRFP150NPBF DISTI #	International Rectifier		400
IRFP150NPBF DISTI #	International Rectifier		265
IRFP150NPBF DISTI #	Infineon Technologies AG	MOSFET N-CHANNEL 100V 42A TO247AC, TU	350	25 $1.027 125 $0.802 500 $0.738 1250 $0.674
IRFP150NPBF DISTI #	Infineon Technologies AG	MOSFET N-CHANNEL 100V 42A TO247AC, EA	1686	1 $2 13 $1.04
IRFP150NPBF DISTI #	Infineon Technologies AG	Transistor: N-MOSFET, unipolar, 100V, 30A, 160	327	1 $1.32 3 $1.2 10 $0.99 100 $0.89
IRFP150NPBF DISTI #	Infineon Technologies AG	N-Ch 100V 42A 160W 0,036R TO247AC RoHS: Compliant	2425	5 $1.46 25 $0.857 100 $0.657 200 $0.6325
IRFP150NPBF DISTI #	Infineon Technologies AG	N-CH 100V 39A 36mOhm TO247 RoHS: Compliant	75	25 $1.0583 75 $0.9977 150 $0.9373 350 $0.8466 800 $0.8163
IRFP150NPBF DISTI #	Infineon Technologies AG	100V,36m,42A,N-Channel Power MOSFET	500	1 $1.32 100 $1.1 500 $0.97 1000 $0.94
IRFP150NPBF DISTI #	INFINEON/IR	TO-247AC RoHS: Compliant	3132	950 $0.7429 3132 $0.6933
IRFP150NPBF DISTI #	Infineon Technologies AG	INSTOCK	650
IRFP150NPBF DISTI #	International Rectifier	INSTOCK	1000
IRFP150NPBF DISTI #	Infineon Technologies AG	MOSFET, N, 100V, 42A, TO-247AC RoHS: Compliant	1919	5 $1.06 25 $1.05 100 $0.818 250 $0.786 500 $0.753
IRFP150NPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 100V 42A 3-Pin(3 Tab) TO-247AC T	800	1 $2.17 10 $1.12 50 $0.87 100 $0.812 200 $0.771 500 $0.75
IRFP150NPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 100V 42A 3-Pin(3 Tab) TO-247AC T RoHS: Compliant	1200	1 $2.18 10 $1.85 50 $1.51 100 $1.48
IRFP150NPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 100V 42A 3-Pin(3 Tab) TO-247AC T	250	10 $1.16 100 $0.9822
IRFP150NPBF DISTI #	Infineon Technologies AG	MOSFET, N, 100V, 42A, TO-247AC RoHS: Compliant	2871	1 $2.65 10 $2.25 100 $1.81 500 $1.57 1000 $1.31 2500 $1.21

IRFP150~~(15)~~
IRFP15~~(21)~~
IRFP1~~(35)~~
IRFP~~(73)~~
IRF~~(69)~~

Infineon Technologies IRFP150NPBF

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