IRFP140PBF

Vishay Siliconix IRFP140PBF

Part Number:
IRFP140PBF
Manufacturer:
Vishay Siliconix
Ventron No:
2849041-IRFP140PBF
Description:
MOSFET N-CH 100V 31A TO-247AC
ECAD Model:
Datasheet:
IRFP140PBF

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Specifications
Vishay Siliconix IRFP140PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFP140PBF.
  • Factory Lead Time
    8 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-247-3
  • Weight
    38.000013g
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    1998
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Resistance
    77mOhm
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    100V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    31A
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    180W Tc
  • Element Configuration
    Single
  • Power Dissipation
    180W
  • Turn On Delay Time
    11 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    77mOhm @ 19A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1700pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    31A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    72nC @ 10V
  • Rise Time
    44ns
  • Drain to Source Voltage (Vdss)
    100V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    43 ns
  • Turn-Off Delay Time
    53 ns
  • Continuous Drain Current (ID)
    31A
  • Threshold Voltage
    4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    100V
  • Input Capacitance
    1.7nF
  • Drain to Source Resistance
    77mOhm
  • Rds On Max
    77 mΩ
  • Nominal Vgs
    4 V
  • Height
    20.7mm
  • Length
    15.87mm
  • Width
    5.31mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFP140PBF Overview
The maximum input capacitance of this device is 1700pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 31A.When VGS=100V, and ID flows to VDS at 100VVDS, the drain-source breakdown voltage is 100V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 53 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 77mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 11 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IRFP140PBF Features
a continuous drain current (ID) of 31A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 53 ns
single MOSFETs transistor is 77mOhm
a threshold voltage of 4V
a 100V drain to source voltage (Vdss)


IRFP140PBF Applications
There are a lot of Vishay Siliconix
IRFP140PBF applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IRFP140PBF More Descriptions
Single N-Channel 100 V 0.077 Ohms Flange Mount Power Mosfet - TO-247
Power Field-Effect Transistor, 31A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
N CHANNEL MOSFET, 100V, 31A, TO-247; Tra; N CHANNEL MOSFET, 100V, 31A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:100V; On Resistance Rds(on):77mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. of Pins:3
Product Comparison
The three parts on the right have similar specifications to IRFP140PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Transistor Element Material
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Operating Mode
    Case Connection
    Transistor Application
    Surface Mount
    Terminal Position
    Reach Compliance Code
    JESD-30 Code
    Configuration
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    View Compare
  • IRFP140PBF
    IRFP140PBF
    8 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    TO-247-3
    38.000013g
    -55°C~175°C TJ
    Tube
    1998
    Active
    1 (Unlimited)
    77mOhm
    175°C
    -55°C
    100V
    MOSFET (Metal Oxide)
    31A
    1
    1
    180W Tc
    Single
    180W
    11 ns
    N-Channel
    77mOhm @ 19A, 10V
    4V @ 250μA
    1700pF @ 25V
    31A Tc
    72nC @ 10V
    44ns
    100V
    10V
    ±20V
    43 ns
    53 ns
    31A
    4V
    20V
    100V
    1.7nF
    77mOhm
    77 mΩ
    4 V
    20.7mm
    15.87mm
    5.31mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFP054
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    -
    38.000013g
    -55°C~175°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    -
    -
    -
    60V
    MOSFET (Metal Oxide)
    70A
    1
    1
    230W Tc
    Single
    230W
    20 ns
    N-Channel
    14m Ω @ 54A, 10V
    4V @ 250μA
    4500pF @ 25V
    70A Tc
    160nC @ 10V
    160ns
    -
    10V
    ±20V
    150 ns
    83 ns
    70A
    -
    20V
    60V
    -
    -
    -
    -
    20.7mm
    15.87mm
    5.31mm
    -
    -
    Non-RoHS Compliant
    Contains Lead
    SILICON
    e0
    no
    3
    EAR99
    TIN LEAD
    NOT SPECIFIED
    NOT SPECIFIED
    3
    Not Qualified
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFP150
    -
    -
    Through Hole
    TO-247-3
    -
    -
    -
    -55°C~175°C TJ
    Tube
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    1
    -
    230W Tc
    -
    -
    -
    N-Channel
    55m Ω @ 25A, 10V
    4V @ 250μA
    2.8pF @ 25V
    41A Tc
    140nC @ 10V
    -
    100V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    SILICON
    e0
    no
    3
    -
    TIN LEAD
    NOT SPECIFIED
    NOT SPECIFIED
    -
    COMMERCIAL
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    NO
    SINGLE
    unknown
    R-PSFM-T3
    SINGLE WITH BUILT-IN DIODE
    40A
    0.055Ohm
    160A
    100V
  • IRFP344PBF
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    TO-247-3
    38.000013g
    -55°C~150°C TJ
    Tube
    1997
    Obsolete
    1 (Unlimited)
    -
    150°C
    -55°C
    450V
    MOSFET (Metal Oxide)
    9.5A
    -
    1
    150W Tc
    Single
    150W
    8.7 ns
    N-Channel
    630mOhm @ 5.7A, 10V
    4V @ 250μA
    1400pF @ 25V
    9.5A Tc
    80nC @ 10V
    28ns
    450V
    10V
    ±20V
    27 ns
    58 ns
    9.5A
    4V
    20V
    450V
    1.4nF
    630mOhm
    630 mΩ
    -
    20.7mm
    15.87mm
    5.31mm
    Unknown
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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