Vishay Siliconix IRFP140PBF
- Part Number:
- IRFP140PBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2849041-IRFP140PBF
- Description:
- MOSFET N-CH 100V 31A TO-247AC
- Datasheet:
- IRFP140PBF
Vishay Siliconix IRFP140PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFP140PBF.
- Factory Lead Time8 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Supplier Device PackageTO-247-3
- Weight38.000013g
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published1998
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance77mOhm
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- Voltage - Rated DC100V
- TechnologyMOSFET (Metal Oxide)
- Current Rating31A
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max180W Tc
- Element ConfigurationSingle
- Power Dissipation180W
- Turn On Delay Time11 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs77mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1700pF @ 25V
- Current - Continuous Drain (Id) @ 25°C31A Tc
- Gate Charge (Qg) (Max) @ Vgs72nC @ 10V
- Rise Time44ns
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)43 ns
- Turn-Off Delay Time53 ns
- Continuous Drain Current (ID)31A
- Threshold Voltage4V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage100V
- Input Capacitance1.7nF
- Drain to Source Resistance77mOhm
- Rds On Max77 mΩ
- Nominal Vgs4 V
- Height20.7mm
- Length15.87mm
- Width5.31mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFP140PBF Overview
The maximum input capacitance of this device is 1700pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 31A.When VGS=100V, and ID flows to VDS at 100VVDS, the drain-source breakdown voltage is 100V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 53 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 77mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 11 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRFP140PBF Features
a continuous drain current (ID) of 31A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 53 ns
single MOSFETs transistor is 77mOhm
a threshold voltage of 4V
a 100V drain to source voltage (Vdss)
IRFP140PBF Applications
There are a lot of Vishay Siliconix
IRFP140PBF applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 1700pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 31A.When VGS=100V, and ID flows to VDS at 100VVDS, the drain-source breakdown voltage is 100V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 53 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 77mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 11 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRFP140PBF Features
a continuous drain current (ID) of 31A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 53 ns
single MOSFETs transistor is 77mOhm
a threshold voltage of 4V
a 100V drain to source voltage (Vdss)
IRFP140PBF Applications
There are a lot of Vishay Siliconix
IRFP140PBF applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IRFP140PBF More Descriptions
Single N-Channel 100 V 0.077 Ohms Flange Mount Power Mosfet - TO-247
Power Field-Effect Transistor, 31A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
N CHANNEL MOSFET, 100V, 31A, TO-247; Tra; N CHANNEL MOSFET, 100V, 31A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:100V; On Resistance Rds(on):77mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. of Pins:3
Power Field-Effect Transistor, 31A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
N CHANNEL MOSFET, 100V, 31A, TO-247; Tra; N CHANNEL MOSFET, 100V, 31A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:100V; On Resistance Rds(on):77mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. of Pins:3
The three parts on the right have similar specifications to IRFP140PBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeTerminal FinishPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusOperating ModeCase ConnectionTransistor ApplicationSurface MountTerminal PositionReach Compliance CodeJESD-30 CodeConfigurationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinView Compare
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IRFP140PBF8 WeeksThrough HoleThrough HoleTO-247-33TO-247-338.000013g-55°C~175°C TJTube1998Active1 (Unlimited)77mOhm175°C-55°C100VMOSFET (Metal Oxide)31A11180W TcSingle180W11 nsN-Channel77mOhm @ 19A, 10V4V @ 250μA1700pF @ 25V31A Tc72nC @ 10V44ns100V10V±20V43 ns53 ns31A4V20V100V1.7nF77mOhm77 mΩ4 V20.7mm15.87mm5.31mmUnknownNoROHS3 CompliantLead Free-----------------------
-
-Through HoleThrough HoleTO-247-33-38.000013g-55°C~175°C TJTube2016Obsolete1 (Unlimited)---60VMOSFET (Metal Oxide)70A11230W TcSingle230W20 nsN-Channel14m Ω @ 54A, 10V4V @ 250μA4500pF @ 25V70A Tc160nC @ 10V160ns-10V±20V150 ns83 ns70A-20V60V----20.7mm15.87mm5.31mm--Non-RoHS CompliantContains LeadSILICONe0no3EAR99TIN LEADNOT SPECIFIEDNOT SPECIFIED3Not QualifiedENHANCEMENT MODEDRAINSWITCHING---------
-
--Through HoleTO-247-3----55°C~175°C TJTube-Obsolete1 (Unlimited)----MOSFET (Metal Oxide)-1-230W Tc---N-Channel55m Ω @ 25A, 10V4V @ 250μA2.8pF @ 25V41A Tc140nC @ 10V-100V10V±20V---------------Non-RoHS Compliant-SILICONe0no3-TIN LEADNOT SPECIFIEDNOT SPECIFIED-COMMERCIALENHANCEMENT MODEDRAINSWITCHINGNOSINGLEunknownR-PSFM-T3SINGLE WITH BUILT-IN DIODE40A0.055Ohm160A100V
-
-Through HoleThrough HoleTO-247-33TO-247-338.000013g-55°C~150°C TJTube1997Obsolete1 (Unlimited)-150°C-55°C450VMOSFET (Metal Oxide)9.5A-1150W TcSingle150W8.7 nsN-Channel630mOhm @ 5.7A, 10V4V @ 250μA1400pF @ 25V9.5A Tc80nC @ 10V28ns450V10V±20V27 ns58 ns9.5A4V20V450V1.4nF630mOhm630 mΩ-20.7mm15.87mm5.31mmUnknown-ROHS3 CompliantLead Free----------------------
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