Infineon Technologies IRFP044NPBF

Name: IRFP044NPBF
Brand: Infineon Technologies
SKU: 3586028-IRFP044NPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFP044NPBF

Manufacturer:: Infineon Technologies

Ventron No:: 3586028-IRFP044NPBF

Description:: MOSFET N-CH 55V 53A TO-247AC

ECAD Model:

Datasheet:: IRFP044NPBF

Specifications

Infineon Technologies IRFP044NPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFP044NPBF.

Factory Lead Time
10 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Bulk
Series
HEXFET®
Published
1997
JESD-609 Code
e3
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
Subcategory
FET General Purpose Power
Voltage - Rated DC
55V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
250
Current Rating
53A
Time@Peak Reflow Temperature-Max (s)
30
Lead Pitch
5.45mm
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
120W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
100W
Case Connection
DRAIN
Turn On Delay Time
12 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
20m Ω @ 29A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1500pF @ 25V
Current - Continuous Drain (Id) @ 25°C
53A Tc
Gate Charge (Qg) (Max) @ Vgs
61nC @ 10V
Rise Time
80ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
52 ns
Turn-Off Delay Time
43 ns
Continuous Drain Current (ID)
53A
Threshold Voltage
4V
JEDEC-95 Code
TO-247AC
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
49A
Drain-source On Resistance-Max
0.02Ohm
Drain to Source Breakdown Voltage
55V
Dual Supply Voltage
55V
Recovery Time
110 ns
Nominal Vgs
4 V
Height
20.7mm
Length
15.87mm
Width
5.3086mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRFP044NPBF Description

IRFP044NPBF belongs to the family of HEXFET? power MOSFET that is designed based on the advanced processing techniques realize extremely low on-resistance per silicon area. Moreover, the IRFP044NPBF is well known for its fast switching speed and ruggedized device design. All of these make it be more efficient and reliable and be used in a wide range of applications.

IRFP044NPBF Features

Fast switching
Advanced processing techniques
Low on-resistance per silicon area
Available in the TO-247 package for commercial-industrial applications

IRFP044NPBF Applications

Power supplies
DC-DC converters
Motor controllers
Consumer electronics
Automotive electronics
Transportation technology
Radio frequency (RF) applications

IRFP044NPBF More Descriptions

MOSFET, Power; N-Channel; 0.020 Ohms (Max.) @ 10 V, 29 A; 55 V (Min.); 40 degC/
Transistor MOSFET Negative Channel 55 Volt 53A 3-Pin(3 Tab) TO-247AC
Single N-Channel 55 V 0.02 Ohm 61 nC HEXFET® Power Mosfet - TO-247AC
55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHSInfineon SCT
Power Field-Effect Transistor, 53A I(D), 55V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:53A; On Resistance, Rds(on):20mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-247AC ;RoHS Compliant: Yes
MOSFET, N, TO-247; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:49A; Resistance, Rds On:0.02ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-247AC; Termination Type:Through Hole; Current, Idm Pulse:180A; Lead Spacing:5.45mm; No. of Pins:3; Power Dissipation:100W; Power, Pd:100W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:55V

Product Comparison

The three parts on the right have similar specifications to IRFP044NPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Lead Pitch

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Dual Supply Voltage

Recovery Time

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Weight

Max Operating Temperature

Min Operating Temperature

Drain to Source Voltage (Vdss)

Input Capacitance

Drain to Source Resistance

Rds On Max

View Compare
IRFP044NPBF

Infineon Technologies

10 Weeks

Through Hole

Through Hole

TO-247-3

3

SILICON

-55°C~175°C TJ

Bulk

HEXFET®

1997

e3

Not For New Designs

1 (Unlimited)

3

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, HIGH RELIABILITY

FET General Purpose Power

55V

MOSFET (Metal Oxide)

250

53A

30

5.45mm

1

1

120W Tc

Single

ENHANCEMENT MODE

100W

DRAIN

12 ns

N-Channel

SWITCHING

20m Ω @ 29A, 10V

4V @ 250μA

1500pF @ 25V

53A Tc

61nC @ 10V

80ns

10V

±20V

52 ns

43 ns

53A

4V

TO-247AC

20V

49A

0.02Ohm

55V

55V

110 ns

4 V

20.7mm

15.87mm

5.3086mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-
IRFP350LC

Vishay Siliconix

-

Through Hole

Through Hole

TO-247-3

3

-

-55°C~150°C TJ

Tube

-

2016

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

1

1

190W Tc

Single

-

190W

-

14 ns

N-Channel

-

300mOhm @ 9.6A, 10V

4V @ 250μA

2200pF @ 25V

16A Tc

76nC @ 10V

54ns

10V

±30V

35 ns

33 ns

16A

4V

-

30V

-

-

400V

-

-

4 V

20.7mm

15.87mm

5.31mm

Unknown

No

Non-RoHS Compliant

-

TO-247-3

38.000013g

150°C

-55°C

400V

2.2nF

300mOhm

300 mΩ

IRFP044NPBF vs IRFP350LC
IRFP450B

Fairchild/ON Semiconductor

-

-

Through Hole

TO-3P-3, SC-65-3

-

-

-55°C~150°C TJ

Tube

-

2001

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

205W Tc

-

-

-

-

-

N-Channel

-

390mOhm @ 7A, 10V

4V @ 250μA

3800pF @ 25V

14A Tc

113nC @ 10V

-

10V

±30V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

TO-3P

-

-

-

500V

-

-

-

IRFP044NPBF vs IRFP450B
IRFP32N50K

Vishay Siliconix

-

Through Hole

Through Hole

TO-247-3

-

-

-55°C~150°C TJ

Tube

-

2014

-

Obsolete

1 (Unlimited)

-

-

-

-

-

500V

MOSFET (Metal Oxide)

-

32A

-

-

-

1

460W Tc

Single

-

-

-

28 ns

N-Channel

-

160mOhm @ 32A, 10V

5V @ 250μA

5280pF @ 25V

32A Tc

190nC @ 10V

120ns

10V

±30V

54 ns

48 ns

32A

-

-

30V

-

-

500V

-

-

-

20.7mm

15.87mm

5.31mm

-

No

Non-RoHS Compliant

Contains Lead

TO-247-3

38.000013g

150°C

-55°C

500V

5.28nF

160mOhm

160 mΩ

IRFP044NPBF vs IRFP32N50K

Certification

Related parts for IRFP044NPBF

IRFP250

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MOSFET N-CH 200V 30A TO-247AD
IRFP450

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IRFP064VPBF

Infineon Technologies

MOSFET N-CH 60V 130A TO-247AC
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IRFP350LC

Vishay Siliconix

MOSFET N-CH 400V 16A TO-247AC
IRFP450B

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MOSFET N-CH 500V 14A TO-3
IRFP344PBF

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MOSFET N-CH 450V 9.5A TO-247AC
IRFP32N50K

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IRFP350

Vishay Siliconix

MOSFET N-CH 400V 16A TO-247AC

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Part Number	Manufacturers	Description	Stock	Price
IRFP044NPBF DISTI #IRFP044NPBF	Infineon Technologies AG	MOSFET N-CH 55V 53A TO-247AC RoHS: Compliant	2885	1 $1.91 10 $1.688 100 $1.334 500 $1.03456 1000 $0.81675
IRFP044NPBF DISTI #IRFP044NPBF	Infineon Technologies AG	Trans MOSFET N-CH 55V 53A 3-Pin(3 Tab) TO-247AC (A RoHS: Compliant	2625	1 $0.9099 10 $0.8079 25 $0.7279 50 $0.6609 100 $0.6059 500 $0.5599 1000 $0.5199
IRFP044NPBF DISTI #IRFP044NPBF	Infineon Technologies AG	Trans MOSFET N-CH 55V 53A 3-Pin(3 Tab) TO-247AC - RoHS: Compliant	0	4000 $0.5699 4800 $0.5499 8800 $0.5299 20000 $0.5119 40000 $0.5029
IRFP044NPBF DISTI #IRFP044NPBF	Infineon Technologies AG	N CHANNEL MOSFET, 55V, 53A TO-247AC, Transistor P	281	1 $1.79 10 $1.53 100 $1.18 500 $1.04 1000 $0.817
IRFP044NPBF DISTI #IRFP044NPBF	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 55V, RDS(ON) 0.02Ohm RoHS: Compliant	1011	1 $1.877 10 $1.656 100 $1.444 500 $1.251 1000 $1.104
IRFP044NPBF DISTI #IRFP044NPBF	Infineon Technologies AG	MOSFET MOSFT 55V 49A 20mOhm 40.7nCAC RoHS: Compliant	4543	1 $1.63 10 $1.39 100 $1.07 500 $0.941 1000 $0.743
IRFP044NPBF DISTI #IRFP044NPBF	Infineon Technologies AG	Single N-Channel 55 V 0.02 Ohm 61 nC HEXFET Power RoHS: Compliant	1075	15 $0.79 150 $0.715 750 $0.625
IRFP044NPBF DISTI #IRFP044NPBF	Infineon Technologies AG	Power Field-Effect Transistor, 53A I(D), 55V, 0.02 RoHS: Compliant	25	1 $0.75 25 $0.69 100 $0.66 500 $0.64 1000 $0.61
IRFP044NPBF DISTI #IRFP044NPBF	International Rectifier	Power Field-Effect Transistor, 53A I(D), 55V, 0.02 RoHS: Compliant	7	1 $0.75 25 $0.69 100 $0.66 500 $0.64 1000 $0.61
IRFP044NPBF DISTI #IRFP044NPBF	Infineon Technologies AG	MOSFET N-CHANNEL 55V 53A TO247AC, EA	890	1 $2 13 $0.84
IRFP044NPBF DISTI #IRFP044NPBF	International Rectifier		25	4 $1.3125 17 $0.8531
IRFP044NPBF DISTI #IRFP044NPBF	International Rectifier		2000
IRFP044NPBF DISTI #IRFP044NPBF	International Rectifier	53 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET	20	1 $1.75 4 $1.4 15 $0.875
IRFP044NPBF DISTI #IRFP044NPBF	Infineon Technologies AG	Transistor: N-MOSFET, unipolar, 55V, 49A, 100W	321	1 $1.14 3 $1.03 10 $0.85 100 $0.73
IRFP044NPBF DISTI #IRFP044NPBF	Infineon Technologies AG	N-Ch 55V 53A 120W 0,02R TO247AC RoHS: Compliant	995	5 $1.34 25 $0.7415 100 $0.5415 200 $0.5215
IRFP044NPBF DISTI #IRFP044NPBF	Infineon Technologies AG	MOSFET, N, TO-247 RoHS: Compliant	0	1 $2.59 10 $2.2 100 $1.7 500 $1.5 1000 $1.18
IRFP044NPBF DISTI #IRFP044NPBF	Infineon Technologies AG	MOSFET, N, TO-247 RoHS: Compliant	0	5 $0.857 25 $0.823 100 $0.789 250 $0.742 500 $0.695
IRFP044NPBF DISTI #IRFP044NPBF	Infineon Technologies AG	PowerField-EffectTransistor,53AI(D),55V,0.02ohm,1- RoHS: Compliant	3516	125 $1.65 3516 $1.5

IRFP044~~(5)~~
IRFP04~~(11)~~
IRFP0~~(22)~~
IRFP~~(73)~~
IRF~~(69)~~

Infineon Technologies IRFP044NPBF

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