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IRFD9123

Vishay Siliconix IRFD9123

Part Number:
IRFD9123
Manufacturer:
Vishay Siliconix
Ventron No:
2853073-IRFD9123
Description:
MOSFET P-CH 100V 1A 4-DIP
ECAD Model:
Datasheet:
IRFD9123

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Part Pictures
  • IRFD9123 Detail Images
Specifications
Vishay Siliconix IRFD9123 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFD9123.
  • Mounting Type
    Through Hole
  • Package / Case
    4-DIP (0.300, 7.62mm)
  • Surface Mount
    NO
  • Transistor Element Material
    SILICON
  • Packaging
    Tube
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    TIN LEAD
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PDIP-T3
  • Qualification Status
    COMMERCIAL
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    600m Ω @ 600mA, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    390pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    1A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    18nC @ 10V
  • Drain to Source Voltage (Vdss)
    100V
  • Drain Current-Max (Abs) (ID)
    0.8A
  • Drain-source On Resistance-Max
    0.8Ohm
  • DS Breakdown Voltage-Min
    80V
  • RoHS Status
    Non-RoHS Compliant
Description
IRFD9123 Overview
A device's maximal input capacitance is 390pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 0.8A, which is the maximum continuous current the device can conduct.To maintain normal operation, it is recommended that the DS breakdown voltage be above 80V.This transistor requires a 100V drain to source voltage (Vdss).

IRFD9123 Features
a 100V drain to source voltage (Vdss)


IRFD9123 Applications
There are a lot of Rochester Electronics, LLC
IRFD9123 applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
IRFD9123 More Descriptions
Tube Through Hole P-Channel Single Mosfet Transistor 1A Ta 1A 1.3W -100V
MOSFET P-CH 100V 1A HEXDIP
MOSFET P-Chan 100V 1.0 Amp
MOSFET P-CHANNEL 100V
French Electronic Distributor since 1988
IRFD9123 Detail Images
Product Comparison
The three parts on the right have similar specifications to IRFD9123.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Packaging
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Technology
    Terminal Position
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    RoHS Status
    Factory Lead Time
    Mount
    Number of Pins
    Supplier Device Package
    Operating Temperature
    Published
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Current Rating
    Number of Channels
    Power Dissipation-Max
    Power Dissipation
    Turn On Delay Time
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    Radiation Hardening
    Lead Free
    Resistance
    Element Configuration
    Threshold Voltage
    REACH SVHC
    View Compare
  • IRFD9123
    IRFD9123
    Vishay Siliconix
    Through Hole
    4-DIP (0.300, 7.62mm)
    NO
    SILICON
    Tube
    e0
    no
    Obsolete
    1 (Unlimited)
    3
    TIN LEAD
    MOSFET (Metal Oxide)
    DUAL
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    R-PDIP-T3
    COMMERCIAL
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    P-Channel
    SWITCHING
    600m Ω @ 600mA, 10V
    4V @ 250μA
    390pF @ 25V
    1A Ta
    18nC @ 10V
    100V
    0.8A
    0.8Ohm
    80V
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFD024
    IRFD024
    Vishay Siliconix
    Through Hole
    4-DIP (0.300, 7.62mm)
    -
    -
    Tube
    -
    -
    Active
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    N-Channel
    -
    100mOhm @ 1.5A, 10V
    4V @ 250μA
    640pF @ 25V
    2.5A Ta
    25nC @ 10V
    60V
    -
    -
    -
    Non-RoHS Compliant
    13 Weeks
    Through Hole
    4
    4-DIP, Hexdip, HVMDIP
    -55°C~175°C TJ
    2017
    150°C
    -55°C
    60V
    2.5A
    1
    1.3W Ta
    1.3W
    13 ns
    58ns
    10V
    ±20V
    58 ns
    25 ns
    2.5A
    20V
    60V
    640pF
    100mOhm
    100 mΩ
    3.37mm
    5mm
    6.29mm
    No
    Contains Lead
    -
    -
    -
    -
    IRFD9123 vs IRFD024
  • IRFD9220PBF
    IRFD9220PBF
    Vishay Siliconix
    Through Hole
    4-DIP (0.300, 7.62mm)
    -
    -
    Tube
    -
    -
    Active
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    1
    -
    -
    -
    P-Channel
    -
    1.5Ohm @ 340mA, 10V
    4V @ 250μA
    340pF @ 25V
    560mA Ta
    15nC @ 10V
    200V
    -
    -
    -
    ROHS3 Compliant
    8 Weeks
    Through Hole
    4
    4-DIP, Hexdip, HVMDIP
    -55°C~150°C TJ
    2008
    150°C
    -55°C
    -200V
    -560mA
    -
    1W Ta
    1W
    8.8 ns
    27ns
    10V
    ±20V
    19 ns
    7.3 ns
    -560mA
    20V
    200V
    340pF
    1.5Ohm
    1.5 Ω
    3.37mm
    6.29mm
    5mm
    No
    Lead Free
    1.5Ohm
    Single
    -4V
    Unknown
    IRFD9123 vs IRFD9220PBF
  • IRFD310
    IRFD310
    Vishay Siliconix
    Through Hole
    4-DIP (0.300, 7.62mm)
    -
    -
    Tube
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    N-Channel
    -
    3.6Ohm @ 210mA, 10V
    4V @ 250μA
    170pF @ 25V
    350mA Ta
    17nC @ 10V
    400V
    -
    -
    -
    Non-RoHS Compliant
    -
    Through Hole
    4
    4-DIP, Hexdip, HVMDIP
    -55°C~150°C TJ
    2016
    150°C
    -55°C
    -
    -
    1
    1W Ta
    -
    8 ns
    9.9ns
    10V
    ±20V
    9.9 ns
    21 ns
    350mA
    20V
    -
    170pF
    3.6Ohm
    3.6 Ω
    3.37mm
    5mm
    6.29mm
    No
    -
    -
    -
    -
    -
    IRFD9123 vs IRFD310
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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