IRFD9024

Vishay Siliconix IRFD9024

Part Number:
IRFD9024
Manufacturer:
Vishay Siliconix
Ventron No:
2853254-IRFD9024
Description:
MOSFET P-CH 60V 1.6A 4-DIP
ECAD Model:
Datasheet:
IRFD9024

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Specifications
Vishay Siliconix IRFD9024 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFD9024.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    4-DIP (0.300, 7.62mm)
  • Number of Pins
    4
  • Supplier Device Package
    4-DIP, Hexdip, HVMDIP
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    2015
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Number of Channels
    1
  • Power Dissipation-Max
    1.3W Ta
  • Turn On Delay Time
    13 ns
  • FET Type
    P-Channel
  • Rds On (Max) @ Id, Vgs
    280mOhm @ 960mA, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    570pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    1.6A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    19nC @ 10V
  • Rise Time
    68ns
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    68 ns
  • Turn-Off Delay Time
    15 ns
  • Continuous Drain Current (ID)
    1.6A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -60V
  • Input Capacitance
    570pF
  • Drain to Source Resistance
    280mOhm
  • Rds On Max
    280 mΩ
  • Nominal Vgs
    -4 V
  • Height
    3.37mm
  • Length
    5mm
  • Width
    6.29mm
  • REACH SVHC
    Unknown
  • RoHS Status
    Non-RoHS Compliant
Description
IRFD9024 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 570pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 1.6A.With a drain-source breakdown voltage of -60V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -60V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 15 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 280mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 13 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.Using drive voltage (10V) reduces this device's overall power consumption.

IRFD9024 Features
a continuous drain current (ID) of 1.6A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 15 ns
single MOSFETs transistor is 280mOhm
a 60V drain to source voltage (Vdss)


IRFD9024 Applications
There are a lot of Vishay Siliconix
IRFD9024 applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IRFD9024 More Descriptions
Trans MOSFET P-CH 60V 1.6A 4-Pin HVMDIP
TRANS MOSFET P-CH 60V 1.6A 3HEXPDIP
Vishay IRFD9024 60V P Channel DIL Mosfet
Product Comparison
The three parts on the right have similar specifications to IRFD9024.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Number of Channels
    Power Dissipation-Max
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Radiation Hardening
    Voltage - Rated DC
    Current Rating
    Power Dissipation
    Lead Free
    Number of Elements
    View Compare
  • IRFD9024
    IRFD9024
    Through Hole
    Through Hole
    4-DIP (0.300, 7.62mm)
    4
    4-DIP, Hexdip, HVMDIP
    -55°C~175°C TJ
    Tube
    2015
    Obsolete
    1 (Unlimited)
    175°C
    -55°C
    MOSFET (Metal Oxide)
    1
    1.3W Ta
    13 ns
    P-Channel
    280mOhm @ 960mA, 10V
    4V @ 250μA
    570pF @ 25V
    1.6A Ta
    19nC @ 10V
    68ns
    60V
    10V
    ±20V
    68 ns
    15 ns
    1.6A
    20V
    -60V
    570pF
    280mOhm
    280 mΩ
    -4 V
    3.37mm
    5mm
    6.29mm
    Unknown
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
  • IRFD310
    Through Hole
    Through Hole
    4-DIP (0.300, 7.62mm)
    4
    4-DIP, Hexdip, HVMDIP
    -55°C~150°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    MOSFET (Metal Oxide)
    1
    1W Ta
    8 ns
    N-Channel
    3.6Ohm @ 210mA, 10V
    4V @ 250μA
    170pF @ 25V
    350mA Ta
    17nC @ 10V
    9.9ns
    400V
    10V
    ±20V
    9.9 ns
    21 ns
    350mA
    20V
    -
    170pF
    3.6Ohm
    3.6 Ω
    -
    3.37mm
    5mm
    6.29mm
    -
    Non-RoHS Compliant
    No
    -
    -
    -
    -
    -
  • IRFD420
    Through Hole
    Through Hole
    4-DIP (0.300, 7.62mm)
    4
    4-DIP, Hexdip, HVMDIP
    -55°C~150°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    MOSFET (Metal Oxide)
    1
    1W Ta
    8 ns
    N-Channel
    3Ohm @ 220mA, 10V
    4V @ 250μA
    360pF @ 25V
    370mA Ta
    24nC @ 10V
    8.6ns
    500V
    10V
    ±20V
    8.6 ns
    33 ns
    370mA
    20V
    500V
    360pF
    3Ohm
    3 Ω
    -
    3.37mm
    5mm
    6.29mm
    -
    Non-RoHS Compliant
    No
    500V
    460mA
    1.3W
    Contains Lead
    -
  • IRFD9014
    Through Hole
    Through Hole
    4-DIP (0.300, 7.62mm)
    4
    4-DIP, Hexdip, HVMDIP
    -55°C~175°C TJ
    Tube
    2012
    Obsolete
    1 (Unlimited)
    175°C
    -55°C
    MOSFET (Metal Oxide)
    1
    1.3W Ta
    11 ns
    P-Channel
    500mOhm @ 660mA, 10V
    4V @ 250μA
    270pF @ 25V
    1.1A Ta
    12nC @ 10V
    63ns
    60V
    10V
    ±20V
    63 ns
    10 ns
    -1.1A
    20V
    -60V
    270pF
    500mOhm
    500 mΩ
    -
    3.37mm
    5mm
    6.29mm
    -
    Non-RoHS Compliant
    -
    -60V
    -1.1A
    1.3W
    Contains Lead
    1
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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