Vishay Siliconix IRFD9024
- Part Number:
- IRFD9024
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2853254-IRFD9024
- Description:
- MOSFET P-CH 60V 1.6A 4-DIP
- Datasheet:
- IRFD9024
Vishay Siliconix IRFD9024 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFD9024.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / Case4-DIP (0.300, 7.62mm)
- Number of Pins4
- Supplier Device Package4-DIP, Hexdip, HVMDIP
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2015
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Channels1
- Power Dissipation-Max1.3W Ta
- Turn On Delay Time13 ns
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs280mOhm @ 960mA, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds570pF @ 25V
- Current - Continuous Drain (Id) @ 25°C1.6A Ta
- Gate Charge (Qg) (Max) @ Vgs19nC @ 10V
- Rise Time68ns
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)68 ns
- Turn-Off Delay Time15 ns
- Continuous Drain Current (ID)1.6A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-60V
- Input Capacitance570pF
- Drain to Source Resistance280mOhm
- Rds On Max280 mΩ
- Nominal Vgs-4 V
- Height3.37mm
- Length5mm
- Width6.29mm
- REACH SVHCUnknown
- RoHS StatusNon-RoHS Compliant
IRFD9024 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 570pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 1.6A.With a drain-source breakdown voltage of -60V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -60V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 15 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 280mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 13 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.Using drive voltage (10V) reduces this device's overall power consumption.
IRFD9024 Features
a continuous drain current (ID) of 1.6A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 15 ns
single MOSFETs transistor is 280mOhm
a 60V drain to source voltage (Vdss)
IRFD9024 Applications
There are a lot of Vishay Siliconix
IRFD9024 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 570pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 1.6A.With a drain-source breakdown voltage of -60V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -60V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 15 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 280mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 13 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.Using drive voltage (10V) reduces this device's overall power consumption.
IRFD9024 Features
a continuous drain current (ID) of 1.6A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 15 ns
single MOSFETs transistor is 280mOhm
a 60V drain to source voltage (Vdss)
IRFD9024 Applications
There are a lot of Vishay Siliconix
IRFD9024 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IRFD9024 More Descriptions
Trans MOSFET P-CH 60V 1.6A 4-Pin HVMDIP
TRANS MOSFET P-CH 60V 1.6A 3HEXPDIP
Vishay IRFD9024 60V P Channel DIL Mosfet
TRANS MOSFET P-CH 60V 1.6A 3HEXPDIP
Vishay IRFD9024 60V P Channel DIL Mosfet
The three parts on the right have similar specifications to IRFD9024.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyNumber of ChannelsPower Dissipation-MaxTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthREACH SVHCRoHS StatusRadiation HardeningVoltage - Rated DCCurrent RatingPower DissipationLead FreeNumber of ElementsView Compare
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IRFD9024Through HoleThrough Hole4-DIP (0.300, 7.62mm)44-DIP, Hexdip, HVMDIP-55°C~175°C TJTube2015Obsolete1 (Unlimited)175°C-55°CMOSFET (Metal Oxide)11.3W Ta13 nsP-Channel280mOhm @ 960mA, 10V4V @ 250μA570pF @ 25V1.6A Ta19nC @ 10V68ns60V10V±20V68 ns15 ns1.6A20V-60V570pF280mOhm280 mΩ-4 V3.37mm5mm6.29mmUnknownNon-RoHS Compliant-------
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Through HoleThrough Hole4-DIP (0.300, 7.62mm)44-DIP, Hexdip, HVMDIP-55°C~150°C TJTube2016Obsolete1 (Unlimited)150°C-55°CMOSFET (Metal Oxide)11W Ta8 nsN-Channel3.6Ohm @ 210mA, 10V4V @ 250μA170pF @ 25V350mA Ta17nC @ 10V9.9ns400V10V±20V9.9 ns21 ns350mA20V-170pF3.6Ohm3.6 Ω-3.37mm5mm6.29mm-Non-RoHS CompliantNo-----
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Through HoleThrough Hole4-DIP (0.300, 7.62mm)44-DIP, Hexdip, HVMDIP-55°C~150°C TJTube2016Obsolete1 (Unlimited)150°C-55°CMOSFET (Metal Oxide)11W Ta8 nsN-Channel3Ohm @ 220mA, 10V4V @ 250μA360pF @ 25V370mA Ta24nC @ 10V8.6ns500V10V±20V8.6 ns33 ns370mA20V500V360pF3Ohm3 Ω-3.37mm5mm6.29mm-Non-RoHS CompliantNo500V460mA1.3WContains Lead-
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Through HoleThrough Hole4-DIP (0.300, 7.62mm)44-DIP, Hexdip, HVMDIP-55°C~175°C TJTube2012Obsolete1 (Unlimited)175°C-55°CMOSFET (Metal Oxide)11.3W Ta11 nsP-Channel500mOhm @ 660mA, 10V4V @ 250μA270pF @ 25V1.1A Ta12nC @ 10V63ns60V10V±20V63 ns10 ns-1.1A20V-60V270pF500mOhm500 mΩ-3.37mm5mm6.29mm-Non-RoHS Compliant--60V-1.1A1.3WContains Lead1
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