Vishay Siliconix IRFD113

Name: IRFD113
Brand: Vishay Siliconix
SKU: 2853052-IRFD113
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFD113

Manufacturer:: Vishay Siliconix

Ventron No:: 2853052-IRFD113

Description:: MOSFET N-CH 60V 800MA 4-DIP

ECAD Model:

Datasheet:: IRFD113

Specifications

Vishay Siliconix IRFD113 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFD113.

Mounting Type
Through Hole
Package / Case
4-DIP (0.300, 7.62mm)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN LEAD
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PDIP-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
1W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
800m Ω @ 800mA, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
200pF @ 25V
Current - Continuous Drain (Id) @ 25°C
800mA Tc
Gate Charge (Qg) (Max) @ Vgs
7nC @ 10V
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
0.8A
Drain-source On Resistance-Max
0.8Ohm
DS Breakdown Voltage-Min
80V
RoHS Status
Non-RoHS Compliant

Description

IRFD113 Overview
A device's maximum input capacitance is 200pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 0.8A, and it is the maximum continuous current the device can conduct.For normal operation, maintain the DS breakdown voltage above 80V.To operate this transistor, you need to apply a 60V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IRFD113 Features
a 60V drain to source voltage (Vdss)

IRFD113 Applications
There are a lot of Rochester Electronics, LLC
IRFD113 applications of single MOSFETs transistors.

Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters

IRFD113 More Descriptions

Tube Through Hole N-Channel Single Mosfet Transistor 800mA Tc 800mA 1W Tc 60V
Trans MOSFET N-CH 60V 0.8A 4-Pin HVMDIP
MOSFET N-CH 60V 800MA 4-DIP
MOSFET N-CH 100V 1A 4-DIP

Product Comparison

The three parts on the right have similar specifications to IRFD113.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

RoHS Status

Mount

Number of Pins

Supplier Device Package

Published

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Current Rating

Number of Channels

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

Height

Length

Width

Lead Free

Factory Lead Time

Radiation Hardening

Resistance

Element Configuration

Threshold Voltage

REACH SVHC

View Compare
IRFD113

Vishay Siliconix

Through Hole

4-DIP (0.300, 7.62mm)

NO

SILICON

-55°C~150°C TJ

Tube

e0

no

Obsolete

1 (Unlimited)

3

TIN LEAD

MOSFET (Metal Oxide)

DUAL

NOT SPECIFIED

unknown

NOT SPECIFIED

R-PDIP-T3

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

1W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

800m Ω @ 800mA, 10V

4V @ 250μA

200pF @ 25V

800mA Tc

7nC @ 10V

60V

10V

±20V

0.8A

0.8Ohm

80V

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRFD9110

Vishay Siliconix

Through Hole

4-DIP (0.300, 7.62mm)

-

-

-55°C~175°C TJ

Tube

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

1

-

1.3W Ta

-

-

P-Channel

-

1.2Ohm @ 420mA, 10V

4V @ 250μA

200pF @ 25V

700mA Ta

8.7nC @ 10V

100V

10V

±20V

-

-

-

Non-RoHS Compliant

Through Hole

4

4-DIP, Hexdip, HVMDIP

2016

175°C

-55°C

-100V

-700mA

1

1.3W

9.6 ns

29ns

29 ns

21 ns

1A

20V

-100V

200pF

1.2Ohm

1.2 Ω

3.37mm

5mm

6.29mm

Contains Lead

-

-

-

-

-

-

IRFD113 vs IRFD9110
IRFD024

Vishay Siliconix

Through Hole

4-DIP (0.300, 7.62mm)

-

-

-55°C~175°C TJ

Tube

-

-

Active

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

1.3W Ta

-

-

N-Channel

-

100mOhm @ 1.5A, 10V

4V @ 250μA

640pF @ 25V

2.5A Ta

25nC @ 10V

60V

10V

±20V

-

-

-

Non-RoHS Compliant

Through Hole

4

4-DIP, Hexdip, HVMDIP

2017

150°C

-55°C

60V

2.5A

1

1.3W

13 ns

58ns

58 ns

25 ns

2.5A

20V

60V

640pF

100mOhm

100 mΩ

3.37mm

5mm

6.29mm

Contains Lead

13 Weeks

No

-

-

-

-

IRFD113 vs IRFD024
IRFD9220PBF

Vishay Siliconix

Through Hole

4-DIP (0.300, 7.62mm)

-

-

-55°C~150°C TJ

Tube

-

-

Active

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

1

-

1W Ta

-

-

P-Channel

-

1.5Ohm @ 340mA, 10V

4V @ 250μA

340pF @ 25V

560mA Ta

15nC @ 10V

200V

10V

±20V

-

-

-

ROHS3 Compliant

Through Hole

4

4-DIP, Hexdip, HVMDIP

2008

150°C

-55°C

-200V

-560mA

-

1W

8.8 ns

27ns

19 ns

7.3 ns

-560mA

20V

200V

340pF

1.5Ohm

1.5 Ω

3.37mm

6.29mm

5mm

Lead Free

8 Weeks

No

1.5Ohm

Single

-4V

Unknown

IRFD113 vs IRFD9220PBF

Certification

Related parts for IRFD113

IRFD120

Vishay Siliconix

MOSFET N-CH 100V 1.3A 4-DIP
IRFD9020

Vishay Siliconix

MOSFET P-CH 60V 1.6A 4-DIP
IRFD9110

Vishay Siliconix

MOSFET P-CH 100V 0.7A 4-DIP
IRFD024

Vishay Siliconix

MOSFET N-CH 60V 2.5A 4-DIP
IRFD9220PBF

Vishay Siliconix

MOSFET P-CH 200V 0.56A 4-DIP
IRFD120PBF

Vishay Siliconix

MOSFET N-CH 100V 1.3A 4-DIP
IRFD9110PBF

Vishay Siliconix

MOSFET P-CH 100V 0.7A 4-DIP
IRFD310

Vishay Siliconix

MOSFET N-CH 400V 350MA 4-DIP
IRFD420

Vishay Siliconix

MOSFET N-CH 500V 370MA 4-DIP
IRFD9014

Vishay Siliconix

MOSFET P-CH 60V 1.1A 4-DIP

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IRFD113 Specification

Part Number	Manufacturers	Description	Stock	Price
IRFD113PBF DISTI #IRFD113PBF	Vishay Intertechnologies	Trans MOSFET N-CH 60V 0.8A 4-Pin HVMDIP RoHS: Compliant	1105	1 $1.8262 10 $1.5651 100 $1.2612 500 $1.1221 1000 $0.9491 2500 $0.8814 5000 $0.8625
IRFD113 DISTI #IRFD113	Vishay Siliconix	MOSFET N-CH 60V 800MA 4-DIP RoHS: Not Compliant	0
IRFD113PBF DISTI #IRFD113PBF	Vishay Siliconix	MOSFET N-CH 60V 800MA 4-DIP RoHS: Compliant	0	2500 $1.0395
IRFD113PBF DISTI #IRFD113PBF	Vishay Intertechnologies	Trans MOSFET N-CH 60V 0.8A 4-Pin HVMDIP RoHS: Compliant	1105	7 $1.7852 10 $1.5342 100 $1.2405 500 $1.1051 1000 $0.9364
IRFD113PBF DISTI #IRFD113PBF	Vishay Intertechnologies	Trans MOSFET N-CH 60V 0.8A 4-Pin HVMDIP - Tape and RoHS: Not Compliant	0	2500 $1.0179 5000 $0.9879 10000 $0.9479 15000 $0.9219 25000 $0.8969
IRFD113PBF DISTI #IRFD113PBF	Vishay Intertechnologies	N-CHANNEL 100-V ROHS COMPLIANT: YES	0	1 $1.97 100 $1.59 250 $1.43 500 $1.32 1000 $1.22
IRFD113 DISTI #IRFD113	Vishay Intertechnologies	MOSFET N-Chan 100V 1.0 Amp RoHS: Not Compliant	0
IRFD113PBF DISTI #IRFD113PBF	Vishay Intertechnologies	MOSFET 60V 800mOhm@10V 0.8A N-Ch RoHS: Compliant	2461	1 $2.18 10 $1.81 100 $1.4 500 $1.23 1000 $1.02 2500 $0.946 5000 $0.911
IRFD113 DISTI #IRFD113	Harris Semiconductor	Small Signal Field-Effect Transistor, 0.8A I(D), 8 RoHS: Not Compliant	54590	1 $0.76 25 $0.71 100 $0.68 500 $0.65 1000 $0.62
IRFD113 DISTI #IRFD113	Harris Semiconductor		138	4 $1.65 14 $1.2375 42 $1.0312
IRFD113 DISTI #IRFD113	SILI		200
IRFD113 DISTI #IRFD113	International Rectifier		132
IRFD113 DISTI #IRFD113	Harris Semiconductor		5
IRFD113 DISTI #IRFD113	International Rectifier	MOSFET Transistor, N-Channel, TO-250VAR	8	1 $1.689 4 $1.4075
IRFD113 DISTI #IRFD113	Harris Semiconductor	MOSFET Transistor, N-Channel, TO-250VAR	110	1 $2.2 16 $1.375 56 $0.825
IRFD113 DISTI #IRFD113	Harris Semiconductor	MOSFET Transistor, N-Channel, TO-250VAR	29	1 $2.4928 3 $1.8696 14 $1.558
IRFD113 DISTI #IRFD113	International Rectifier	MOSFET Transistor, N-Channel, TO-250VAR	11	1 $15 3 $11 8 $10
IRFD113 DISTI #IRFD113	International Rectifier	INSTOCK	516
IRFD113 DISTI #IRFD113		INSTOCK	280
IRFD113PBF DISTI #IRFD113PBF	Vishay Intertechnologies	MOSFET 60V 800mOhm@10V 0.8A N-Ch RoHS: Compliant	0
IRFD113PBF DISTI #IRFD113PBF	Vishay Intertechnologies	Trans MOSFET N-CH 60V 0.8A 4-Pin HVMDIP RoHS: Compliant	1105	10 $1.5342 100 $1.2405 500 $1.1051 1000 $0.9364

Vishay Siliconix IRFD113

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