Infineon Technologies IRF7832PBF
- Part Number:
- IRF7832PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2483310-IRF7832PBF
- Description:
- MOSFET N-CH 30V 20A 8-SOIC
- ECAD Model:
-
- Datasheet:
- IRF7832PBF
Infineon Technologies IRF7832PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7832PBF.
- Factory Lead Time16 Weeks
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~155°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2005
- JESD-609 Codee3
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PDSO-G8
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max2.5W Ta
- Operating ModeENHANCEMENT MODE
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs4m Ω @ 20A, 10V
- Vgs(th) (Max) @ Id2.32V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds4310pF @ 15V
- Current - Continuous Drain (Id) @ 25°C20A Ta
- Gate Charge (Qg) (Max) @ Vgs51nC @ 4.5V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- JEDEC-95 CodeMS-012AA
- Drain Current-Max (Abs) (ID)20A
- Drain-source On Resistance-Max0.004Ohm
- Pulsed Drain Current-Max (IDM)160A
- DS Breakdown Voltage-Min30V
- Avalanche Energy Rating (Eas)260 mJ
- RoHS StatusROHS3 Compliant
IRF7832PBF Description
IRF7832PBF is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 30V. The operating temperature of the IRF7832PBF is -55??C~155??C TJ and its maximum power dissipation is 2.5W Ta. IRF7832PBF has 8 pins and it is available in Tube packaging way. The Drain to Source Voltage (Vdss) of IRF7832PBF is 30V.
IRF7832PBF Features
Very Low RDS(on) at 4.5V VGS
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage and Current
20V VGS Max. Gate Rating
100% tested for Rg
IRF7832PBF Applications
Synchronous MOSFET for Notebook Processor Power
Synchronous Rectifier MOSFET for Isolated DC-DC Converters in
Networking Systems
Lead-Free
IRF7832PBF is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 30V. The operating temperature of the IRF7832PBF is -55??C~155??C TJ and its maximum power dissipation is 2.5W Ta. IRF7832PBF has 8 pins and it is available in Tube packaging way. The Drain to Source Voltage (Vdss) of IRF7832PBF is 30V.
IRF7832PBF Features
Very Low RDS(on) at 4.5V VGS
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage and Current
20V VGS Max. Gate Rating
100% tested for Rg
IRF7832PBF Applications
Synchronous MOSFET for Notebook Processor Power
Synchronous Rectifier MOSFET for Isolated DC-DC Converters in
Networking Systems
Lead-Free
IRF7832PBF More Descriptions
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 3.1Milliohms;ID 20A;SO-8;PD 2.5W;VGS /-20V
Single N-Channel 30 V 4.8 mOhm 51 nC HEXFET® Power Mosfet - SOIC-8
Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:20A; On Resistance, Rds(on):4mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.32V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:20A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Pin Format:1 S; 2 S; 3 S; 4 G; 5 D; 6 D; 7 D; 8 D; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:160A; Row Pitch:6.3mm; SMD Marking:IRF7832PBF; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:2.32V; Voltage Vgs Rds on Measurement:10V
Single N-Channel 30 V 4.8 mOhm 51 nC HEXFET® Power Mosfet - SOIC-8
Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:20A; On Resistance, Rds(on):4mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.32V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:20A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Pin Format:1 S; 2 S; 3 S; 4 G; 5 D; 6 D; 7 D; 8 D; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:160A; Row Pitch:6.3mm; SMD Marking:IRF7832PBF; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:2.32V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to IRF7832PBF.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)JEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusAdditional FeatureHTS CodeMountReach Compliance CodePin CountCase ConnectionContinuous Drain Current (ID)Supplier Device PackageMax Power DissipationInput CapacitanceRds On MaxView Compare
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IRF7832PBF16 WeeksSurface Mount8-SOIC (0.154, 3.90mm Width)YESSILICON-55°C~155°C TJTubeHEXFET®2005e3Discontinued1 (Unlimited)8EAR99Matte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING26030R-PDSO-G8Not Qualified1SINGLE WITH BUILT-IN DIODE2.5W TaENHANCEMENT MODEN-ChannelSWITCHING4m Ω @ 20A, 10V2.32V @ 250μA4310pF @ 15V20A Ta51nC @ 4.5V30V4.5V 10V±20VMS-012AA20A0.004Ohm160A30V260 mJROHS3 Compliant------------ -
-Surface Mount8-SOIC (0.154, 3.90mm Width)YESSILICON-55°C~150°C TJTape & Reel (TR)HEXFET®2003-Obsolete1 (Unlimited)8EAR99--MOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G8Not Qualified1SINGLE WITH BUILT-IN DIODE2.5W TcENHANCEMENT MODEN-ChannelSWITCHING30m Ω @ 7.3A, 10V1V @ 250μA550pF @ 25V7.3A Tc28nC @ 10V30V4.5V 10V±20VMS-012AA7.3A0.03Ohm58A30V70 mJNon-RoHS CompliantLOGIC LEVEL COMPATIBLE8541.29.00.95---------
-
-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~150°C TJTape & Reel (TR)-2017-Obsolete1 (Unlimited)2--FET General Purpose PowerMOSFET (Metal Oxide)SINGLEGULL WING225NOT SPECIFIEDR-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE3.1W Ta 50W TcENHANCEMENT MODEN-ChannelSWITCHING1.8 Ω @ 2A, 10V4V @ 250μA410pF @ 25V3.3A Tc20nC @ 10V400V10V±20V---13A400V190 mJNon-RoHS Compliant--Surface Mountunknown3DRAIN3.3A----
-
-Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA---55°C~150°C TJTube-2016-Obsolete1 (Unlimited)----MOSFET (Metal Oxide)----------N-Channel-3.6Ohm @ 1.2A, 10V4V @ 250μA170pF @ 25V2A Tc17nC @ 10V400V10V±20V------Non-RoHS Compliant--Through Hole---2AI2PAK3.1W170pF3.6 Ω
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