Infineon Technologies IRF7204TRPBF

Name: IRF7204TRPBF
Brand: Infineon Technologies
SKU: 2848853-IRF7204TRPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF7204TRPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2848853-IRF7204TRPBF

Description:: MOSFET P-CH 20V 5.3A 8-SOIC

ECAD Model:

Datasheet:: IRF7204TRPBF

Specifications

Infineon Technologies IRF7204TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7204TRPBF.

Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
1997
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
Resistance
60mOhm
Additional Feature
LOGIC LEVEL COMPATIBLE
Voltage - Rated DC
-20V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
-5.3A
Number of Elements
1
Power Dissipation-Max
2.5W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Output Current
5.3A
Turn On Delay Time
14 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
60m Ω @ 5.3A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
860pF @ 10V
Current - Continuous Drain (Id) @ 25°C
5.3A Ta
Gate Charge (Qg) (Max) @ Vgs
25nC @ 10V
Rise Time
26ns
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±12V
Fall Time (Typ)
68 ns
Turn-Off Delay Time
100 ns
Continuous Drain Current (ID)
-5.3A
Threshold Voltage
-2.5V
Gate to Source Voltage (Vgs)
12V
Drain to Source Breakdown Voltage
-20V
Dual Supply Voltage
-20V
Recovery Time
100 ns
Nominal Vgs
-2.5 V
Height
1.4986mm
Length
4.9784mm
Width
3.9878mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead, Lead Free

Description

IRF7204TRPBF Overview
A device's maximal input capacitance is 860pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is -5.3A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -20V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 100 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 14 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a -2.5V threshold voltage.This transistor requires a 20V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).

IRF7204TRPBF Features
a continuous drain current (ID) of -5.3A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 100 ns
a threshold voltage of -2.5V
a 20V drain to source voltage (Vdss)

IRF7204TRPBF Applications
There are a lot of Infineon Technologies
IRF7204TRPBF applications of single MOSFETs transistors.

Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples

IRF7204TRPBF More Descriptions

MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 0.06Ohm;ID -5.3A;SO-8;PD 2.5W;VGS /-12V
Trans MOSFET P-CH Si 20V 5.3A 8-Pin SOIC T/R / MOSFET P-CH 20V 5.3A 8-SOIC
Single P-Channel 20 V 0.1 Ohm 25 nC HEXFET® Power Mosfet - SOIC-8
IRF7204TRPBF,MOSFET, P-CHANNEL , -20V, -5.3A, 60 MOHM, 25 NC
-20V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHSInfineon SCT
MOSFET, P CH, -20V, -5.3A, SOIC-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -5.3A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.06oh; Available until stocks are exhausted Alternative available
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Continuous Drain Current, Id:-5.3A; On Resistance, Rds(on):100mohm; Rds(on) Test Voltage, Vgs:12V; Package/Case:8-SO; Power Dissipation, Pd:2.5W ;RoHS Compliant: Yes
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = 5.3 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 60 / Gate-Source Voltage V = 12 / Fall Time ns = 68 / Rise Time ns = 26 / Turn-OFF Delay Time ns = 100 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5

Product Comparison

The three parts on the right have similar specifications to IRF7204TRPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Resistance

Additional Feature

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Current Rating

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Output Current

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Recovery Time

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

ECCN Code

HTS Code

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Configuration

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Subcategory

Reach Compliance Code

Pin Count

Case Connection

Supplier Device Package

Max Power Dissipation

Input Capacitance

Rds On Max

View Compare
IRF7204TRPBF

Infineon Technologies

12 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®

1997

Active

1 (Unlimited)

8

60mOhm

LOGIC LEVEL COMPATIBLE

-20V

MOSFET (Metal Oxide)

DUAL

GULL WING

-5.3A

1

2.5W Tc

Single

ENHANCEMENT MODE

2.5W

5.3A

14 ns

P-Channel

SWITCHING

60m Ω @ 5.3A, 10V

2.5V @ 250μA

860pF @ 10V

5.3A Ta

25nC @ 10V

26ns

20V

4.5V 10V

±12V

68 ns

100 ns

-5.3A

-2.5V

12V

-20V

-20V

100 ns

-2.5 V

1.4986mm

4.9784mm

3.9878mm

No SVHC

No

ROHS3 Compliant

Contains Lead, Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF7201TR

Infineon Technologies

-

-

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®

2003

Obsolete

1 (Unlimited)

8

-

LOGIC LEVEL COMPATIBLE

-

MOSFET (Metal Oxide)

DUAL

GULL WING

-

1

2.5W Tc

-

ENHANCEMENT MODE

-

-

-

N-Channel

SWITCHING

30m Ω @ 7.3A, 10V

1V @ 250μA

550pF @ 25V

7.3A Tc

28nC @ 10V

-

30V

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

YES

EAR99

8541.29.00.95

NOT SPECIFIED

NOT SPECIFIED

R-PDSO-G8

Not Qualified

SINGLE WITH BUILT-IN DIODE

MS-012AA

7.3A

0.03Ohm

58A

30V

70 mJ

-

-

-

-

-

-

-

-

IRF7204TRPBF vs IRF7201TR
IRF720STRL

Vishay Siliconix

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

-

2017

Obsolete

1 (Unlimited)

2

-

-

-

MOSFET (Metal Oxide)

SINGLE

GULL WING

-

1

3.1W Ta 50W Tc

-

ENHANCEMENT MODE

-

-

-

N-Channel

SWITCHING

1.8 Ω @ 2A, 10V

4V @ 250μA

410pF @ 25V

3.3A Tc

20nC @ 10V

-

400V

10V

±20V

-

-

3.3A

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

225

NOT SPECIFIED

R-PSSO-G2

Not Qualified

SINGLE WITH BUILT-IN DIODE

-

-

-

13A

400V

190 mJ

FET General Purpose Power

unknown

3

DRAIN

-

-

-

-

IRF7204TRPBF vs IRF720STRL
IRF710L

Vishay Siliconix

-

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

-

-55°C~150°C TJ

Tube

-

2016

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

N-Channel

-

3.6Ohm @ 1.2A, 10V

4V @ 250μA

170pF @ 25V

2A Tc

17nC @ 10V

-

400V

10V

±20V

-

-

2A

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

I2PAK

3.1W

170pF

3.6 Ω

IRF7204TRPBF vs IRF710L

Certification

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IRF7204TRPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRF7204TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH Si 20V 5.3A 8-Pin SOIC T/R RoHS: Compliant	9898	1 $0.583 10 $0.5104 25 $0.5081 100 $0.3672 250 $0.3661 500 $0.3651 1000 $0.3064 3000 $0.3058 6000 $0.2661
IRF7204TRPBF DISTI #	Infineon Technologies AG	MOSFET P-CH 20V 5.3A 8-SOIC RoHS: Compliant	4560	1 $1 10 $0.879 100 $0.6878 500 $0.52016 1000 $0.4244
IRF7204TRPBF DISTI #	Infineon Technologies AG	MOSFET P-CH 20V 5.3A 8-SOIC RoHS: Compliant	4560	1 $1 10 $0.879 100 $0.6878 500 $0.52016 1000 $0.4244
IRF7204TRPBF DISTI #	Infineon Technologies AG	MOSFET P-CH 20V 5.3A 8-SOIC RoHS: Compliant	4000	4000 $0.37717
IRF7204TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH Si 20V 5.3A 8-Pin SOIC T/R RoHS: Compliant	9898	29 $0.5081 100 $0.3672 250 $0.3661 500 $0.3651 1000 $0.3064 3000 $0.3058 6000 $0.2661
IRF7204TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH Si 20V 5.3A 8-Pin SOIC T/R RoHS: Compliant	4000	4000 $0.2448
IRF7204TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 20V 5.3A 8-Pin SOIC T/R - Tape a RoHS: Compliant	0	4000 $0.2429 8000 $0.2339 16000 $0.2259 24000 $0.2179 40000 $0.2139
IRF7204TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 20V 5.3A 8-Pin SOIC T/R (Alt: SP RoHS: Compliant	0	4000 $0.2819 8000 $0.2299 16000 $0.2109 24000 $0.1949 40000 $0.1809
IRF7204TRPBF DISTI #	Infineon Technologies AG	MOSFET Transistor, P Channel, -5.3 A, -20 V, 0.06	7512	1 $0.79 25 $0.655 50 $0.539 100 $0.423 250 $0.395 500 $0.367 1000 $0.339
IRF7204TRPBF DISTI #	Infineon Technologies AG	P CHANNEL MOSFET, -20V, 5.3A, SOIC, Transistor Po	230	1 $0.869 25 $0.721 50 $0.593 100 $0.465 250 $0.435 500 $0.404 1000 $0.373
IRF7204TRPBF DISTI #	Infineon Technologies AG	MOSFET, Power, P-Ch, VDSS -20V, RDS(ON) 0.06Oh RoHS: Compliant	0	20 $0.71
IRF7204TRPBF DISTI #	Infineon Technologies AG	MOSFET MOSFT PCh -20V -5.3A 60mOhm 25nC RoHS: Compliant	3906	1 $0.79 10 $0.655 100 $0.423 1000 $0.339 4000 $0.286 8000 $0.275 24000 $0.265
IRF7204TRPBF DISTI #	International Rectifier		4308
IRF7204TRPBF DISTI #	Infineon Technologies AG	HEXFET P-CH MOSFET 5.3A 20V SOIC8, RL	3180	100 $0.164
IRF7204TRPBF DISTI #	International Rectifier	TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,5.3A I(D)	3400	1 $0.72 168 $0.252 795 $0.225
IRF7204TRPBF DISTI #	Infineon Technologies AG	P-CH 20V 5,3A 60mOhm SO8 RoHS: Compliant	4000	4000 $0.3246 8000 $0.306 12000 $0.2875 16000 $0.2596 24000 $0.2504
IRF7204TRPBF DISTI #	INFINEON/IR	SO-8 RoHS: Compliant	4000	4000 $0.36
IRF7204TRPBF DISTI #	Infineon Technologies AG	P-Ch 20V 5,3A 2,5W 0,06R SO8 RoHS: Compliant	8500	50 $0.236 100 $0.196 500 $0.176 2000 $0.169
IRF7204TRPBF DISTI #	Infineon Technologies AG	MOSFET, P CH, -20V, -5.3A, SOIC-8 RoHS: Compliant	7512	1 $1.25 10 $1.04 100 $0.669 1000 $0.537 4000 $0.453 8000 $0.435 24000 $0.419
IRF7204TRPBF DISTI #	Infineon Technologies AG	MOSFET, P CH, -20V, -5.3A, SOIC-8 RoHS: Compliant	0	1 $1.25 10 $1.04 100 $0.669 1000 $0.537 4000 $0.453 8000 $0.435 24000 $0.419
IRF7204TRPBF DISTI #	Infineon Technologies AG	MOSFET, P CH, -20V, -5.3A, SOIC-8 RoHS: Compliant	7596	5 $0.377 25 $0.314 100 $0.289 250 $0.255 500 $0.237
IRF7204TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH Si 20V 5.3A 8-Pin SOIC T/R RoHS: Compliant	9898	10 $0.5104 25 $0.5081 100 $0.3672 250 $0.3661
IRF7204TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH Si 20V 5.3A 8-Pin SOIC T/R RoHS: Compliant	4000	4000 $0.308

IRF7204~~(9)~~
IRF720~~(52)~~
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IRF7~~(80)~~
IRF~~(69)~~

Infineon Technologies IRF7204TRPBF

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