Infineon Technologies IRF7201TR
- Part Number:
- IRF7201TR
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2853679-IRF7201TR
- Description:
- MOSFET N-CH 30V 7.3A 8-SOIC
- ECAD Model:
-
- Datasheet:
- IRF7201
Infineon Technologies IRF7201TR technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7201TR.
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2003
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Additional FeatureLOGIC LEVEL COMPATIBLE
- HTS Code8541.29.00.95
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PDSO-G8
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max2.5W Tc
- Operating ModeENHANCEMENT MODE
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs30m Ω @ 7.3A, 10V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds550pF @ 25V
- Current - Continuous Drain (Id) @ 25°C7.3A Tc
- Gate Charge (Qg) (Max) @ Vgs28nC @ 10V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- JEDEC-95 CodeMS-012AA
- Drain Current-Max (Abs) (ID)7.3A
- Drain-source On Resistance-Max0.03Ohm
- Pulsed Drain Current-Max (IDM)58A
- DS Breakdown Voltage-Min30V
- Avalanche Energy Rating (Eas)70 mJ
- RoHS StatusNon-RoHS Compliant
IRF7201TR Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 70 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 550pF @ 25V.A device's drain current is its maximum continuous current, and this device's drain current is 7.3A.A maximum pulsed drain current of 58A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 30V.In order to operate this transistor, a voltage of 30V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
IRF7201TR Features
the avalanche energy rating (Eas) is 70 mJ
based on its rated peak drain current 58A.
a 30V drain to source voltage (Vdss)
IRF7201TR Applications
There are a lot of Infineon Technologies
IRF7201TR applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 70 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 550pF @ 25V.A device's drain current is its maximum continuous current, and this device's drain current is 7.3A.A maximum pulsed drain current of 58A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 30V.In order to operate this transistor, a voltage of 30V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
IRF7201TR Features
the avalanche energy rating (Eas) is 70 mJ
based on its rated peak drain current 58A.
a 30V drain to source voltage (Vdss)
IRF7201TR Applications
There are a lot of Infineon Technologies
IRF7201TR applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IRF7201TR More Descriptions
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Trans MOSFET N-CH 30V 7.3A 8-Pin SOIC T/R
Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Trans MOSFET N-CH 30V 7.3A 8-Pin SOIC T/R
Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
The three parts on the right have similar specifications to IRF7201TR.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureHTS CodeTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)JEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusMountSubcategoryReach Compliance CodePin CountCase ConnectionContinuous Drain Current (ID)Factory Lead TimeNumber of PinsResistanceVoltage - Rated DCCurrent RatingElement ConfigurationPower DissipationOutput CurrentTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeThreshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageRecovery TimeNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningLead FreeView Compare
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IRF7201TRSurface Mount8-SOIC (0.154, 3.90mm Width)YESSILICON-55°C~150°C TJTape & Reel (TR)HEXFET®2003Obsolete1 (Unlimited)8EAR99LOGIC LEVEL COMPATIBLE8541.29.00.95MOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G8Not Qualified1SINGLE WITH BUILT-IN DIODE2.5W TcENHANCEMENT MODEN-ChannelSWITCHING30m Ω @ 7.3A, 10V1V @ 250μA550pF @ 25V7.3A Tc28nC @ 10V30V4.5V 10V±20VMS-012AA7.3A0.03Ohm58A30V70 mJNon-RoHS Compliant------------------------------- -
Surface Mount8-SOIC (0.154, 3.90mm Width)---55°C~150°C TJTape & Reel (TR)HEXFET®2000Obsolete1 (Unlimited)----MOSFET (Metal Oxide)--------2.5W Tc-P-Channel-60m Ω @ 5.4A, 4.5V700mV @ 250μA780pF @ 15V5.4A Tc22nC @ 4.5V20V2.7V 4.5V±12V------Non-RoHS Compliant------------------------------
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Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~150°C TJTape & Reel (TR)-2017Obsolete1 (Unlimited)2---MOSFET (Metal Oxide)SINGLEGULL WING225NOT SPECIFIEDR-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE3.1W Ta 50W TcENHANCEMENT MODEN-ChannelSWITCHING1.8 Ω @ 2A, 10V4V @ 250μA410pF @ 25V3.3A Tc20nC @ 10V400V10V±20V---13A400V190 mJNon-RoHS CompliantSurface MountFET General Purpose Powerunknown3DRAIN3.3A------------------------
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Surface Mount8-SOIC (0.154, 3.90mm Width)-SILICON-55°C~150°C TJTape & Reel (TR)HEXFET®1997Active1 (Unlimited)8-LOGIC LEVEL COMPATIBLE-MOSFET (Metal Oxide)DUALGULL WING----1-2.5W TcENHANCEMENT MODEP-ChannelSWITCHING60m Ω @ 5.3A, 10V2.5V @ 250μA860pF @ 10V5.3A Ta25nC @ 10V20V4.5V 10V±12V------ROHS3 CompliantSurface Mount-----5.3A12 Weeks860mOhm-20V-5.3ASingle2.5W5.3A14 ns26ns68 ns100 ns-2.5V12V-20V-20V100 ns-2.5 V1.4986mm4.9784mm3.9878mmNo SVHCNoContains Lead, Lead Free
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