Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRF7820TRPBF
IRF7820TRPBF

Infineon Technologies IRF7820TRPBF

Part Number:
IRF7820TRPBF
Manufacturer:
Infineon Technologies
Ventron No:
2482451-IRF7820TRPBF
Description:
MOSFET N CH 200V 3.7A 8-SO
ECAD Model:
Datasheet:
IRF7820TRPBF

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Infineon Technologies IRF7820TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7820TRPBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    2012
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    2.5W Ta
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.5W
  • Turn On Delay Time
    7.1 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    78m Ω @ 2.2A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 100μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1750pF @ 100V
  • Current - Continuous Drain (Id) @ 25°C
    3.7A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    44nC @ 10V
  • Rise Time
    3.2ns
  • Drain to Source Voltage (Vdss)
    200V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    12 ns
  • Turn-Off Delay Time
    14 ns
  • Continuous Drain Current (ID)
    3.7A
  • Threshold Voltage
    4V
  • Gate to Source Voltage (Vgs)
    20V
  • DS Breakdown Voltage-Min
    200V
  • Nominal Vgs
    4 V
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRF7820TRPBF Description
IRF7820TRPBF is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 200V. The operating temperature of IRF7820TRPBF is -55°C~150°C TJ and its maximum power dissipation is 2.5W. IRF7820TRPBF has 8 pins and it is available in Tape & Reel (TR) packaging way. The Turn-On Delay Time of IRF7820TRPBF is 7.1 ns and its Turn-Off Delay Time is 14 ns.

IRF7820TRPBF Features
Very Low RDS(on) at 10V VGS
Low Gate Charge
Fully Characterized Avalanche Voltage and Current
20V VGS Max. Gate Rating

IRF7820TRPBF Applications
Synchronous MOSFET for Notebook Processor Power
Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems
IRF7820TRPBF More Descriptions
Single N-Channel 200 V 78 mOhm 44 nC HEXFET® Power Mosfet - SOIC-8
Synchronous MOSFET for Notebook Processor Power | MOSFET N CH 200V 3.7A 8-SO
Trans MOSFET N-CH 200V 3.7A 8-Pin SOIC T/R - Tape and Reel
200V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHSInfineon SCT
Small Signal Field-Effect Transistor, 3.7A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, N-CH, 200V, 3.7A, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.0625ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:2.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to 150°C
Product Comparison
The three parts on the right have similar specifications to IRF7820TRPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    DS Breakdown Voltage-Min
    Nominal Vgs
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Additional Feature
    HTS Code
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Resistance
    Voltage - Rated DC
    Current Rating
    Element Configuration
    Output Current
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Recovery Time
    Height
    Length
    Width
    View Compare
  • IRF7820TRPBF
    IRF7820TRPBF
    Infineon Technologies
    12 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    2012
    Active
    1 (Unlimited)
    8
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    1
    SINGLE WITH BUILT-IN DIODE
    2.5W Ta
    ENHANCEMENT MODE
    2.5W
    7.1 ns
    N-Channel
    SWITCHING
    78m Ω @ 2.2A, 10V
    5V @ 100μA
    1750pF @ 100V
    3.7A Ta
    44nC @ 10V
    3.2ns
    200V
    10V
    ±20V
    12 ns
    14 ns
    3.7A
    4V
    20V
    200V
    4 V
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF7207TR
    IRF7207TR
    Infineon Technologies
    -
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    2000
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    2.5W Tc
    -
    -
    -
    P-Channel
    -
    60m Ω @ 5.4A, 4.5V
    700mV @ 250μA
    780pF @ 15V
    5.4A Tc
    22nC @ 4.5V
    -
    20V
    2.7V 4.5V
    ±12V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRF7820TRPBF vs IRF7207TR
  • IRF7201TR
    IRF7201TR
    Infineon Technologies
    -
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    2003
    Obsolete
    1 (Unlimited)
    8
    EAR99
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    1
    SINGLE WITH BUILT-IN DIODE
    2.5W Tc
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    30m Ω @ 7.3A, 10V
    1V @ 250μA
    550pF @ 25V
    7.3A Tc
    28nC @ 10V
    -
    30V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    30V
    -
    -
    -
    Non-RoHS Compliant
    -
    YES
    LOGIC LEVEL COMPATIBLE
    8541.29.00.95
    NOT SPECIFIED
    NOT SPECIFIED
    R-PDSO-G8
    Not Qualified
    MS-012AA
    7.3A
    0.03Ohm
    58A
    70 mJ
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRF7820TRPBF vs IRF7201TR
  • IRF7204TRPBF
    IRF7204TRPBF
    Infineon Technologies
    12 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    1997
    Active
    1 (Unlimited)
    8
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    1
    -
    2.5W Tc
    ENHANCEMENT MODE
    2.5W
    14 ns
    P-Channel
    SWITCHING
    60m Ω @ 5.3A, 10V
    2.5V @ 250μA
    860pF @ 10V
    5.3A Ta
    25nC @ 10V
    26ns
    20V
    4.5V 10V
    ±12V
    68 ns
    100 ns
    -5.3A
    -2.5V
    12V
    -
    -2.5 V
    No SVHC
    No
    ROHS3 Compliant
    Contains Lead, Lead Free
    -
    LOGIC LEVEL COMPATIBLE
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    60mOhm
    -20V
    -5.3A
    Single
    5.3A
    -20V
    -20V
    100 ns
    1.4986mm
    4.9784mm
    3.9878mm
    IRF7820TRPBF vs IRF7204TRPBF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
Related parts for IRF7820TRPBF
Popular Search Part Number Related Keywords Search Tags

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.