IRF7726TRPBF

Infineon Technologies IRF7726TRPBF

Part Number:
IRF7726TRPBF
Manufacturer:
Infineon Technologies
Ventron No:
3554153-IRF7726TRPBF
Description:
MOSFET P-CH 30V 7A MICRO8
ECAD Model:
Datasheet:
IRF7726TRPBF

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Specifications
Infineon Technologies IRF7726TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7726TRPBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    2000
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Resistance
    26mOhm
  • Additional Feature
    ULTRA LOW RESISTANCE
  • Voltage - Rated DC
    -30V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Current Rating
    -7A
  • Number of Elements
    1
  • Power Dissipation-Max
    1.79W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.79W
  • Turn On Delay Time
    15 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    26m Ω @ 7A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2204pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    7A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    69nC @ 10V
  • Rise Time
    25ns
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    107 ns
  • Turn-Off Delay Time
    227 ns
  • Continuous Drain Current (ID)
    -7A
  • Threshold Voltage
    -2.5V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    7A
  • Drain to Source Breakdown Voltage
    -30V
  • Nominal Vgs
    -2.5 V
  • Height
    910μm
  • Length
    3.048mm
  • Width
    3.048mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Contains Lead, Lead Free
Description
IRF7726TRPBF Description   IRF7726TRPBF MOSFET is a high-voltage, fast-switching MOSFET which is low in on-state resistance. IRF7726TRPBF Infineon Technologies gives designers the highest quality combination of ruggedized design, speedy switching, cost-effectiveness, and low resistance to on-resistance. Due to the low resistance of IRF7726TRPBF datasheet, it is suitable for DC motors, inverters, SMPS, lighting, load switches.     IRF7726TRPBF Features   Planar cell structure Optimized for broadest availability Product qualification Silicon optimized for applications switching Low profile package     IRF7726TRPBF Applications   DC motors Inverters SMPS Lighting Load switches  
IRF7726TRPBF More Descriptions
IRF7726TRPBF P-channel MOSFET Transistor, 7 A, 30 V, 8-Pin SOIC
-30V Single P-Channel HEXFET Power MOSFET in a Micro 8 package, MICRO8, RoHS
P CHANNEL MOSFET, -30V, 7A, MICRO8; Tran; P CHANNEL MOSFET, -30V, 7A, MICRO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-7A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):26mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V
Product Comparison
The three parts on the right have similar specifications to IRF7726TRPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Additional Feature
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Current Rating
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Weight
    Pbfree Code
    Number of Channels
    Case Connection
    JEDEC-95 Code
    DS Breakdown Voltage-Min
    Output Current
    Dual Supply Voltage
    Recovery Time
    View Compare
  • IRF7726TRPBF
    IRF7726TRPBF
    12 Weeks
    Surface Mount
    Surface Mount
    8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    2000
    Active
    1 (Unlimited)
    8
    EAR99
    26mOhm
    ULTRA LOW RESISTANCE
    -30V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -7A
    1
    1.79W Ta
    Single
    ENHANCEMENT MODE
    1.79W
    15 ns
    P-Channel
    SWITCHING
    26m Ω @ 7A, 10V
    2.5V @ 250μA
    2204pF @ 25V
    7A Ta
    69nC @ 10V
    25ns
    30V
    4.5V 10V
    ±20V
    107 ns
    227 ns
    -7A
    -2.5V
    20V
    7A
    -30V
    -2.5 V
    910μm
    3.048mm
    3.048mm
    No SVHC
    No
    ROHS3 Compliant
    Contains Lead, Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF7233PBF
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    -
    -55°C~150°C TJ
    Tube
    HEXFET®
    2004
    Obsolete
    1 (Unlimited)
    -
    -
    20MOhm
    -
    -12V
    MOSFET (Metal Oxide)
    -
    -
    -9.5A
    1
    2.5W Ta
    -
    -
    2.5W
    -
    P-Channel
    -
    20mOhm @ 9.5A, 4.5V
    600mV @ 250μA
    6000pF @ 10V
    9.5A Ta
    74nC @ 5V
    540ns
    12V
    2.5V 4.5V
    ±12V
    370 ns
    77 ns
    -9.5A
    -
    12V
    -
    -12V
    -
    -
    -
    -
    -
    No
    RoHS Compliant
    Lead Free
    8-SO
    150°C
    -55°C
    6nF
    20mOhm
    20 mΩ
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF720LPBF
    12 Weeks
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    3
    SILICON
    -55°C~150°C TJ
    Tube
    -
    2017
    Active
    1 (Unlimited)
    3
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    1
    3.1W Ta 50W Tc
    Single
    ENHANCEMENT MODE
    -
    10 ns
    N-Channel
    SWITCHING
    1.8 Ω @ 2A, 10V
    4V @ 250μA
    410pF @ 25V
    3.3A Tc
    20nC @ 10V
    14ns
    400V
    10V
    ±20V
    13 ns
    30 ns
    3.3A
    -
    20V
    -
    -
    -
    9.01mm
    10.41mm
    4.7mm
    -
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    6.000006g
    yes
    1
    DRAIN
    TO-220AB
    400V
    -
    -
    -
  • IRF7204TRPBF
    12 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    1997
    Active
    1 (Unlimited)
    8
    -
    60mOhm
    LOGIC LEVEL COMPATIBLE
    -20V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -5.3A
    1
    2.5W Tc
    Single
    ENHANCEMENT MODE
    2.5W
    14 ns
    P-Channel
    SWITCHING
    60m Ω @ 5.3A, 10V
    2.5V @ 250μA
    860pF @ 10V
    5.3A Ta
    25nC @ 10V
    26ns
    20V
    4.5V 10V
    ±12V
    68 ns
    100 ns
    -5.3A
    -2.5V
    12V
    -
    -20V
    -2.5 V
    1.4986mm
    4.9784mm
    3.9878mm
    No SVHC
    No
    ROHS3 Compliant
    Contains Lead, Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    5.3A
    -20V
    100 ns
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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