Infineon Technologies IRF7460TRPBF

Name: IRF7460TRPBF
Brand: Infineon Technologies
SKU: 2853813-IRF7460TRPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF7460TRPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2853813-IRF7460TRPBF

Description:: MOSFET N-CH 20V 12A 8-SOIC

ECAD Model:

Datasheet:: IRF7460PbF

Specifications

Infineon Technologies IRF7460TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7460TRPBF.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Supplier Device Package
8-SO
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
2004
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
20V
Technology
MOSFET (Metal Oxide)
Current Rating
12A
Number of Elements
1
Power Dissipation-Max
2.5W Ta
Power Dissipation
2.5W
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
10mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2050pF @ 10V
Current - Continuous Drain (Id) @ 25°C
12A Ta
Gate Charge (Qg) (Max) @ Vgs
19nC @ 4.5V
Rise Time
6.9ns
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
12A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
20V
Input Capacitance
2.05nF
Drain to Source Resistance
14mOhm
Rds On Max
10 mΩ
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

IRF7460TRPBF Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2050pF @ 10V.This device has a continuous drain current (ID) of [12A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=20V, the drain-source breakdown voltage is 20V.MOSFETs have 14mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 20V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

IRF7460TRPBF Features
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 20V voltage
single MOSFETs transistor is 14mOhm
a 20V drain to source voltage (Vdss)

IRF7460TRPBF Applications
There are a lot of Infineon Technologies
IRF7460TRPBF applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

IRF7460TRPBF More Descriptions

Trans MOSFET N-CH 20V 12A 8-Pin SOIC T/R
Multilayer Ceramic Capacitors MLCC - SMD/SMT 1206 12pF 630volt C0G /-5%
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
MOSFET, 20V, 10A, 10 MOHM, 19 NC QG, SO-8
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:12A; On Resistance, Rds(on):10mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:Yes RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to IRF7460TRPBF.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Power Dissipation-Max

Power Dissipation

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

RoHS Status

Lead Free

Factory Lead Time

Weight

Transistor Element Material

Pbfree Code

Number of Terminations

Number of Channels

Element Configuration

Operating Mode

Case Connection

Turn On Delay Time

Transistor Application

Fall Time (Typ)

Turn-Off Delay Time

JEDEC-95 Code

DS Breakdown Voltage-Min

Height

Length

Width

Radiation Hardening

Resistance

Additional Feature

Terminal Position

Terminal Form

Output Current

Threshold Voltage

Dual Supply Voltage

Recovery Time

Nominal Vgs

REACH SVHC

View Compare
IRF7460TRPBF

Infineon Technologies

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

8-SO

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®

2004

Obsolete

1 (Unlimited)

150°C

-55°C

20V

MOSFET (Metal Oxide)

12A

1

2.5W Ta

2.5W

N-Channel

10mOhm @ 12A, 10V

3V @ 250μA

2050pF @ 10V

12A Ta

19nC @ 4.5V

6.9ns

20V

4.5V 10V

±20V

12A

20V

20V

2.05nF

14mOhm

10 mΩ

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF7207TR

Infineon Technologies

-

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

-

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®

2000

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

-

2.5W Tc

-

P-Channel

60m Ω @ 5.4A, 4.5V

700mV @ 250μA

780pF @ 15V

5.4A Tc

22nC @ 4.5V

-

20V

2.7V 4.5V

±12V

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF7460TRPBF vs IRF7207TR
IRF720LPBF

Vishay Siliconix

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

3

-

-55°C~150°C TJ

Tube

-

2017

Active

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

1

3.1W Ta 50W Tc

-

N-Channel

1.8 Ω @ 2A, 10V

4V @ 250μA

410pF @ 25V

3.3A Tc

20nC @ 10V

14ns

400V

10V

±20V

3.3A

20V

-

-

-

-

ROHS3 Compliant

-

12 Weeks

6.000006g

SILICON

yes

3

1

Single

ENHANCEMENT MODE

DRAIN

10 ns

SWITCHING

13 ns

30 ns

TO-220AB

400V

9.01mm

10.41mm

4.7mm

No

-

-

-

-

-

-

-

-

-

-

IRF7460TRPBF vs IRF720LPBF
IRF7204TRPBF

Infineon Technologies

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

-

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®

1997

Active

1 (Unlimited)

-

-

-20V

MOSFET (Metal Oxide)

-5.3A

1

2.5W Tc

2.5W

P-Channel

60m Ω @ 5.3A, 10V

2.5V @ 250μA

860pF @ 10V

5.3A Ta

25nC @ 10V

26ns

20V

4.5V 10V

±12V

-5.3A

12V

-20V

-

-

-

ROHS3 Compliant

Contains Lead, Lead Free

12 Weeks

-

SILICON

-

8

-

Single

ENHANCEMENT MODE

-

14 ns

SWITCHING

68 ns

100 ns

-

-

1.4986mm

4.9784mm

3.9878mm

No

60mOhm

LOGIC LEVEL COMPATIBLE

DUAL

GULL WING

5.3A

-2.5V

-20V

100 ns

-2.5 V

No SVHC

IRF7460TRPBF vs IRF7204TRPBF