Infineon Technologies IRF7413TRPBF
- Part Number:
- IRF7413TRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2482388-IRF7413TRPBF
- Description:
- MOSFET N-CH 30V 13A 8-SOIC
- Datasheet:
- IRF7413TRPBF
Infineon Technologies IRF7413TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7413TRPBF.
- Package / CaseSOP8
- PackagingTape & Reel (TR)
- RoHS StatusRoHS Compliant
IRF7413TRPBF Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IRF7413TRPBF or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IRF7413TRPBF. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IRF7413TRPBF or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IRF7413TRPBF. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IRF7413TRPBF More Descriptions
Transistor MOSFET Negative Channel 30 Volt 13A 8-Pin SOIC T/R
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.011Ohm;ID 13A;SO-8;PD 2.5W;VGS /-20V;VF 1
Single N-Channel 30V 0.011 Ohm 52 nC HEXFET® Power Mosfet - SOIC-8
Benefits: RoHS Compliant; Industry-leading quality; Low Switching Losses; Low Conduction Losses
Trans MOSFET N-CH 30V 13A 8-Pin SOIC T/R
Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
N CHANNEL MOSFET, 30V, 13A, SOIC; Transi; N CHANNEL MOSFET, 30V, 13A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:30V; On Resistance Rds(on):18mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:3V; No. of Pins:8
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.011Ohm;ID 13A;SO-8;PD 2.5W;VGS /-20V;VF 1
Single N-Channel 30V 0.011 Ohm 52 nC HEXFET® Power Mosfet - SOIC-8
Benefits: RoHS Compliant; Industry-leading quality; Low Switching Losses; Low Conduction Losses
Trans MOSFET N-CH 30V 13A 8-Pin SOIC T/R
Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
N CHANNEL MOSFET, 30V, 13A, SOIC; Transi; N CHANNEL MOSFET, 30V, 13A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:30V; On Resistance Rds(on):18mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:3V; No. of Pins:8
The three parts on the right have similar specifications to IRF7413TRPBF.
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ImagePart NumberManufacturerPackage / CasePackagingRoHS StatusMounting TypeOperating TemperatureSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)MountTransistor Element MaterialNumber of TerminationsSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationContinuous Drain Current (ID)Pulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Factory Lead TimeNumber of PinsResistanceAdditional FeatureVoltage - Rated DCCurrent RatingElement ConfigurationPower DissipationOutput CurrentTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeThreshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageRecovery TimeNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningLead FreeView Compare
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IRF7413TRPBFSOP8Tape & Reel (TR)RoHS Compliant----------------------------------------------------------------
-
8-SOIC (0.154, 3.90mm Width)Tape & Reel (TR)Non-RoHS CompliantSurface Mount-55°C~150°C TJHEXFET®2000Obsolete1 (Unlimited)MOSFET (Metal Oxide)2.5W TcP-Channel60m Ω @ 5.4A, 4.5V700mV @ 250μA780pF @ 15V5.4A Tc22nC @ 4.5V20V2.7V 4.5V±12V----------------------------------------------
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TO-263-3, D2Pak (2 Leads Tab), TO-263ABTape & Reel (TR)Non-RoHS CompliantSurface Mount-55°C~150°C TJ-2017Obsolete1 (Unlimited)MOSFET (Metal Oxide)3.1W Ta 50W TcN-Channel1.8 Ω @ 2A, 10V4V @ 250μA410pF @ 25V3.3A Tc20nC @ 10V400V10V±20VSurface MountSILICON2FET General Purpose PowerSINGLEGULL WING225unknownNOT SPECIFIED3R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING3.3A13A400V190 mJ-------------------------
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8-SOIC (0.154, 3.90mm Width)Tape & Reel (TR)ROHS3 CompliantSurface Mount-55°C~150°C TJHEXFET®1997Active1 (Unlimited)MOSFET (Metal Oxide)2.5W TcP-Channel60m Ω @ 5.3A, 10V2.5V @ 250μA860pF @ 10V5.3A Ta25nC @ 10V20V4.5V 10V±12VSurface MountSILICON8-DUALGULL WING------1-ENHANCEMENT MODE-SWITCHING-5.3A---12 Weeks860mOhmLOGIC LEVEL COMPATIBLE-20V-5.3ASingle2.5W5.3A14 ns26ns68 ns100 ns-2.5V12V-20V-20V100 ns-2.5 V1.4986mm4.9784mm3.9878mmNo SVHCNoContains Lead, Lead Free
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