IRF510

Vishay Siliconix IRF510

Part Number:
IRF510
Manufacturer:
Vishay Siliconix
Ventron No:
2488210-IRF510
Description:
MOSFET N-CH 100V 5.6A TO-220AB
ECAD Model:
Datasheet:
IRF510

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Specifications
Vishay Siliconix IRF510 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF510.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Surface Mount
    NO
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    TIN LEAD
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PSFM-T3
  • Qualification Status
    COMMERCIAL
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    43W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    540m Ω @ 3.4A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    180pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    5.6A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    8.3nC @ 10V
  • Drain to Source Voltage (Vdss)
    100V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • JEDEC-95 Code
    TO-220AB
  • Drain Current-Max (Abs) (ID)
    5.6A
  • Drain-source On Resistance-Max
    0.54Ohm
  • Pulsed Drain Current-Max (IDM)
    20A
  • DS Breakdown Voltage-Min
    100V
  • Avalanche Energy Rating (Eas)
    19 mJ
  • RoHS Status
    Non-RoHS Compliant
Description
IRF510 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 19 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 180pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 5.6A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 20A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 100V in order to maintain normal operation.Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IRF510 Features
the avalanche energy rating (Eas) is 19 mJ
based on its rated peak drain current 20A.
a 100V drain to source voltage (Vdss)


IRF510 Applications
There are a lot of Rochester Electronics, LLC
IRF510 applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
IRF510 More Descriptions
5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET, package: TO-220AB
N-Channel Enhancement-Mode Vertical DMOS Power FETs | MOSFET N-CH 100V 5.6A TO-220AB
Transistor NPN IRF510 INTERNATIONAL RECTIFIER Ampere=4 Volt=100 TO220Halfin
Trans MOSFET N-CH 100V 5.6A 3-Pin(3 Tab) TO-220AB
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:5.6A; On Resistance, Rds(on):540mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: No
MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.6A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.54ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 43W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Current Temperature: 25°C; Device Marking: IRF510; Full Power Rating Temperature: 25°C; Lead Spacing: 2.54mm; No. of Transistors: 1; Operating Temperature Min: -55°C; Pin Configuration: a; Pin Format: 1 g; 2 d/tab; 3 s; Pulse Current Idm: 20A; Voltage Vds Typ: 100V; Voltage Vgs Rds on Measurement: 10V
Product Comparison
The three parts on the right have similar specifications to IRF510.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Technology
    Terminal Position
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    RoHS Status
    Mount
    Number of Pins
    Supplier Device Package
    Series
    Published
    Termination
    Max Operating Temperature
    Min Operating Temperature
    Power Dissipation
    Turn On Delay Time
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    REACH SVHC
    Radiation Hardening
    Lead Free
    Contact Plating
    ECCN Code
    Resistance
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Terminal Form
    Current Rating
    Element Configuration
    Rise Time
    Fall Time (Typ)
    Recovery Time
    Height
    Length
    Width
    View Compare
  • IRF510
    IRF510
    Through Hole
    TO-220-3
    NO
    SILICON
    -55°C~175°C TJ
    Tube
    e0
    no
    Obsolete
    1 (Unlimited)
    3
    TIN LEAD
    MOSFET (Metal Oxide)
    SINGLE
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    R-PSFM-T3
    COMMERCIAL
    1
    SINGLE WITH BUILT-IN DIODE
    43W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    540m Ω @ 3.4A, 10V
    4V @ 250μA
    180pF @ 25V
    5.6A Tc
    8.3nC @ 10V
    100V
    10V
    ±20V
    TO-220AB
    5.6A
    0.54Ohm
    20A
    100V
    19 mJ
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF5800TRPBF
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    -
    Obsolete
    2 (1 Year)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    1
    -
    2W Ta
    -
    -
    P-Channel
    -
    85mOhm @ 4A, 10V
    1V @ 250μA
    535pF @ 25V
    4A Ta
    17nC @ 10V
    30V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    Surface Mount
    6
    Micro6™(TSOP-6)
    HEXFET®
    2010
    SMD/SMT
    150°C
    -55°C
    2W
    11.4 ns
    24 ns
    -4A
    -1V
    20V
    -30V
    -30V
    535pF
    85mOhm
    85 mΩ
    -1 V
    No SVHC
    No
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF520NL
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    -
    -55°C~175°C TJ
    Tube
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    3.8W Ta 48W Tc
    -
    -
    N-Channel
    -
    200m Ω @ 5.7A, 10V
    4V @ 250μA
    330pF @ 25V
    9.7A Tc
    25nC @ 10V
    100V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    HEXFET®
    1998
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF520NSPBF
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -
    Tube
    e3
    -
    Discontinued
    1 (Unlimited)
    2
    -
    MOSFET (Metal Oxide)
    -
    260
    -
    30
    R-PSSO-G2
    -
    1
    -
    3.8W Ta 48W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    200m Ω @ 5.7A, 10V
    4V @ 250μA
    330pF @ 25V
    9.7A Tc
    25nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Surface Mount
    3
    -
    HEXFET®
    2004
    -
    175°C
    -55°C
    48W
    4.5 ns
    32 ns
    9.7A
    4V
    20V
    100V
    -
    -
    -
    -
    4 V
    No SVHC
    No
    Lead Free
    Tin
    EAR99
    200mOhm
    AVALANCHE RATED, HIGH RELIABILITY
    FET General Purpose Power
    100V
    GULL WING
    9.7A
    Single
    23ns
    23 ns
    150 ns
    4.826mm
    10.668mm
    10.16mm
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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