Vishay Siliconix IRF510
- Part Number:
- IRF510
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2488210-IRF510
- Description:
- MOSFET N-CH 100V 5.6A TO-220AB
- Datasheet:
- IRF510
Vishay Siliconix IRF510 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF510.
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTIN LEAD
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PSFM-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max43W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs540m Ω @ 3.4A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds180pF @ 25V
- Current - Continuous Drain (Id) @ 25°C5.6A Tc
- Gate Charge (Qg) (Max) @ Vgs8.3nC @ 10V
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- JEDEC-95 CodeTO-220AB
- Drain Current-Max (Abs) (ID)5.6A
- Drain-source On Resistance-Max0.54Ohm
- Pulsed Drain Current-Max (IDM)20A
- DS Breakdown Voltage-Min100V
- Avalanche Energy Rating (Eas)19 mJ
- RoHS StatusNon-RoHS Compliant
IRF510 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 19 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 180pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 5.6A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 20A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 100V in order to maintain normal operation.Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IRF510 Features
the avalanche energy rating (Eas) is 19 mJ
based on its rated peak drain current 20A.
a 100V drain to source voltage (Vdss)
IRF510 Applications
There are a lot of Rochester Electronics, LLC
IRF510 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 19 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 180pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 5.6A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 20A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 100V in order to maintain normal operation.Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IRF510 Features
the avalanche energy rating (Eas) is 19 mJ
based on its rated peak drain current 20A.
a 100V drain to source voltage (Vdss)
IRF510 Applications
There are a lot of Rochester Electronics, LLC
IRF510 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
IRF510 More Descriptions
5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET, package: TO-220AB
N-Channel Enhancement-Mode Vertical DMOS Power FETs | MOSFET N-CH 100V 5.6A TO-220AB
Transistor NPN IRF510 INTERNATIONAL RECTIFIER Ampere=4 Volt=100 TO220Halfin
Trans MOSFET N-CH 100V 5.6A 3-Pin(3 Tab) TO-220AB
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:5.6A; On Resistance, Rds(on):540mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: No
MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.6A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.54ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 43W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Current Temperature: 25°C; Device Marking: IRF510; Full Power Rating Temperature: 25°C; Lead Spacing: 2.54mm; No. of Transistors: 1; Operating Temperature Min: -55°C; Pin Configuration: a; Pin Format: 1 g; 2 d/tab; 3 s; Pulse Current Idm: 20A; Voltage Vds Typ: 100V; Voltage Vgs Rds on Measurement: 10V
N-Channel Enhancement-Mode Vertical DMOS Power FETs | MOSFET N-CH 100V 5.6A TO-220AB
Transistor NPN IRF510 INTERNATIONAL RECTIFIER Ampere=4 Volt=100 TO220Halfin
Trans MOSFET N-CH 100V 5.6A 3-Pin(3 Tab) TO-220AB
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:5.6A; On Resistance, Rds(on):540mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: No
MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.6A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.54ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 43W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Current Temperature: 25°C; Device Marking: IRF510; Full Power Rating Temperature: 25°C; Lead Spacing: 2.54mm; No. of Transistors: 1; Operating Temperature Min: -55°C; Pin Configuration: a; Pin Format: 1 g; 2 d/tab; 3 s; Pulse Current Idm: 20A; Voltage Vds Typ: 100V; Voltage Vgs Rds on Measurement: 10V
The three parts on the right have similar specifications to IRF510.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)JEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusMountNumber of PinsSupplier Device PackageSeriesPublishedTerminationMax Operating TemperatureMin Operating TemperaturePower DissipationTurn On Delay TimeTurn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageInput CapacitanceDrain to Source ResistanceRds On MaxNominal VgsREACH SVHCRadiation HardeningLead FreeContact PlatingECCN CodeResistanceAdditional FeatureSubcategoryVoltage - Rated DCTerminal FormCurrent RatingElement ConfigurationRise TimeFall Time (Typ)Recovery TimeHeightLengthWidthView Compare
-
IRF510Through HoleTO-220-3NOSILICON-55°C~175°C TJTubee0noObsolete1 (Unlimited)3TIN LEADMOSFET (Metal Oxide)SINGLENOT SPECIFIEDunknownNOT SPECIFIEDR-PSFM-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODE43W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING540m Ω @ 3.4A, 10V4V @ 250μA180pF @ 25V5.6A Tc8.3nC @ 10V100V10V±20VTO-220AB5.6A0.54Ohm20A100V19 mJNon-RoHS Compliant---------------------------------------
-
Surface MountSOT-23-6 Thin, TSOT-23-6---55°C~150°C TJTape & Reel (TR)--Obsolete2 (1 Year)--MOSFET (Metal Oxide)------1-2W Ta--P-Channel-85mOhm @ 4A, 10V1V @ 250μA535pF @ 25V4A Ta17nC @ 10V30V4.5V 10V±20V------RoHS CompliantSurface Mount6Micro6™(TSOP-6)HEXFET®2010SMD/SMT150°C-55°C2W11.4 ns24 ns-4A-1V20V-30V-30V535pF85mOhm85 mΩ-1 VNo SVHCNoLead Free---------------
-
Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA---55°C~175°C TJTube--Obsolete1 (Unlimited)--MOSFET (Metal Oxide)--------3.8W Ta 48W Tc--N-Channel-200m Ω @ 5.7A, 10V4V @ 250μA330pF @ 25V9.7A Tc25nC @ 10V100V10V±20V------Non-RoHS Compliant---HEXFET®1998---------------------------------
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---Tubee3-Discontinued1 (Unlimited)2-MOSFET (Metal Oxide)-260-30R-PSSO-G2-1-3.8W Ta 48W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING200m Ω @ 5.7A, 10V4V @ 250μA330pF @ 25V9.7A Tc25nC @ 10V-10V±20V------ROHS3 CompliantSurface Mount3-HEXFET®2004-175°C-55°C48W4.5 ns32 ns9.7A4V20V100V----4 VNo SVHCNoLead FreeTinEAR99200mOhmAVALANCHE RATED, HIGH RELIABILITYFET General Purpose Power100VGULL WING9.7ASingle23ns23 ns150 ns4.826mm10.668mm10.16mm
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