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IRF530NS

Infineon Technologies IRF530NS

Part Number:
IRF530NS
Manufacturer:
Infineon Technologies
Ventron No:
2853682-IRF530NS
Description:
MOSFET N-CH 100V 17A D2PAK
ECAD Model:
Datasheet:
IRF530NS

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Specifications
Infineon Technologies IRF530NS technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF530NS.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2002
  • JESD-609 Code
    e0
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Additional Feature
    AVALANCHE RATED
  • HTS Code
    8541.29.00.95
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    225
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    3.8W Ta 70W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    90m Ω @ 9A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    920pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    17A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    37nC @ 10V
  • Drain to Source Voltage (Vdss)
    100V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Drain Current-Max (Abs) (ID)
    17A
  • Drain-source On Resistance-Max
    0.09Ohm
  • Pulsed Drain Current-Max (IDM)
    60A
  • DS Breakdown Voltage-Min
    100V
  • Avalanche Energy Rating (Eas)
    93 mJ
  • RoHS Status
    Non-RoHS Compliant
Description
IRF530NS Description
The IRF530NS is a HEXFET? single N-channel Power MOSFET utilizing advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design provides an extremely efficient and reliable operation for use in a wide variety of applications. The surface-mount power package is capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.

IRF530NS Features
Advanced process technology
Ultra-low ON-resistance
Dynamic dV/dt rating
Fast switching
Fully avalanche rating

IRF530NS Applications
Induction furnaces
Arc furnaces and arc welders
Steel rolling mills
Large motors with periodic loading
Thyristor drives
IRF530NS More Descriptions
Trans MOSFET N-CH 100V 17A 3-Pin (2 Tab) D2PAK
MOSFET, 100V, 17A, 90 mOhm, 24.7 nC Qg, D2-Pak
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:17A; On-Resistance, Rds(on):90mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2-PAK; Drain Source On Resistance @ 10V:90mohm RoHS Compliant: No
Product Comparison
The three parts on the right have similar specifications to IRF530NS.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    HTS Code
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    RoHS Status
    Mount
    Number of Pins
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Current Rating
    Power Dissipation
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    FET Feature
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    Radiation Hardening
    Lead Free
    Subcategory
    View Compare
  • IRF530NS
    IRF530NS
    Infineon Technologies
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    YES
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    2002
    e0
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Tin/Lead (Sn/Pb)
    AVALANCHE RATED
    8541.29.00.95
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    225
    30
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    3.8W Ta 70W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    90m Ω @ 9A, 10V
    4V @ 250μA
    920pF @ 25V
    17A Tc
    37nC @ 10V
    100V
    10V
    ±20V
    17A
    0.09Ohm
    60A
    100V
    93 mJ
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF520NL
    IRF520NL
    Infineon Technologies
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    -
    -55°C~175°C TJ
    Tube
    HEXFET®
    1998
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    3.8W Ta 48W Tc
    -
    -
    N-Channel
    -
    200m Ω @ 5.7A, 10V
    4V @ 250μA
    330pF @ 25V
    9.7A Tc
    25nC @ 10V
    100V
    10V
    ±20V
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRF530NS vs IRF520NL
  • IRF5803D2PBF
    IRF5803D2PBF
    Infineon Technologies
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -
    -55°C~150°C TJ
    Tube
    FETKY™
    2004
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    2W Ta
    -
    -
    P-Channel
    -
    112mOhm @ 3.4A, 10V
    3V @ 250μA
    1110pF @ 25V
    3.4A Ta
    37nC @ 10V
    40V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    RoHS Compliant
    Surface Mount
    8
    8-SO
    150°C
    -55°C
    -40V
    -3.4A
    2W
    43 ns
    550ns
    50 ns
    88 ns
    -3.4A
    20V
    -40V
    1.11nF
    Schottky Diode (Isolated)
    190mOhm
    112 mΩ
    1.5mm
    5mm
    4mm
    No
    Lead Free
    -
    IRF530NS vs IRF5803D2PBF
  • IRF5305STRR
    IRF5305STRR
    Infineon Technologies
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    YES
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2000
    e3
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY
    -
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    260
    30
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    3.8W Ta 110W Tc
    ENHANCEMENT MODE
    DRAIN
    P-Channel
    SWITCHING
    60m Ω @ 16A, 10V
    4V @ 250μA
    1200pF @ 25V
    31A Tc
    63nC @ 10V
    55V
    10V
    ±20V
    31A
    0.06Ohm
    110A
    55V
    280 mJ
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Other Transistors
    IRF530NS vs IRF5305STRR
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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