Infineon Technologies IPP034NE7N3GXKSA1

IPP034NE7N3GXKSA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 640 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 8130pF @ 37.5V.This device conducts a continuous drain current (ID) of 100A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 40 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 400A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 16 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 75V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IPP034NE7N3GXKSA1 Features
the avalanche energy rating (Eas) is 640 mJ
a continuous drain current (ID) of 100A
the turn-off delay time is 40 ns
based on its rated peak drain current 400A.


IPP034NE7N3GXKSA1 Applications
There are a lot of Infineon Technologies
IPP034NE7N3GXKSA1 applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching