Infineon Technologies IPP03N03LA

IPP03N03LA Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 960 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 7027pF @ 15V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 80A.With a drain-source breakdown voltage of 25V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 25V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 45 ns.Peak drain current for this device is 385A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

IPP03N03LA Features
the avalanche energy rating (Eas) is 960 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 385A.


IPP03N03LA Applications
There are a lot of Infineon Technologies
IPP03N03LA applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification