Infineon Technologies IPP04CN10NG
- Part Number:
- IPP04CN10NG
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2853890-IPP04CN10NG
- Description:
- MOSFET N-CH 100V 100A TO220-3
- ECAD Model:
-
- Datasheet:
- IP(B,I,P)04CN10N G
Infineon Technologies IPP04CN10NG technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP04CN10NG.
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesOptiMOS™
- Published2010
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMATTE TIN
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codecompliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max300W Tc
- Operating ModeENHANCEMENT MODE
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs4.2m Ω @ 100A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds13800pF @ 50V
- Current - Continuous Drain (Id) @ 25°C100A Tc
- Gate Charge (Qg) (Max) @ Vgs210nC @ 10V
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- JEDEC-95 CodeTO-220AB
- Drain Current-Max (Abs) (ID)100A
- Drain-source On Resistance-Max0.0042Ohm
- Pulsed Drain Current-Max (IDM)400A
- DS Breakdown Voltage-Min100V
- Avalanche Energy Rating (Eas)1000 mJ
- RoHS StatusRoHS Compliant
IPP04CN10NG Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 13800pF @ 50V.A device's drain current is its maximum continuous current, and this device's drain current is 100A.A maximum pulsed drain current of 400A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 100V.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IPP04CN10NG Features
the avalanche energy rating (Eas) is 1000 mJ
based on its rated peak drain current 400A.
a 100V drain to source voltage (Vdss)
IPP04CN10NG Applications
There are a lot of Infineon Technologies
IPP04CN10NG applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 13800pF @ 50V.A device's drain current is its maximum continuous current, and this device's drain current is 100A.A maximum pulsed drain current of 400A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 100V.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IPP04CN10NG Features
the avalanche energy rating (Eas) is 1000 mJ
based on its rated peak drain current 400A.
a 100V drain to source voltage (Vdss)
IPP04CN10NG Applications
There are a lot of Infineon Technologies
IPP04CN10NG applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
The three parts on the right have similar specifications to IPP04CN10NG.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTechnologyTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)JEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusAdditional FeatureFactory Lead TimeMountNumber of PinsPower DissipationTurn On Delay TimeHalogen FreeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Max Dual Supply VoltageREACH SVHCLead FreeWeightNumber of ChannelsElement ConfigurationCase ConnectionView Compare
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IPP04CN10NGThrough HoleTO-220-3NOSILICON-55°C~175°C TJTubeOptiMOS™2010e3yesObsolete1 (Unlimited)3EAR99MATTE TINFET General Purpose PowerMOSFET (Metal Oxide)SINGLE260compliantNOT SPECIFIED3R-PSFM-T3Not Qualified1SINGLE WITH BUILT-IN DIODE300W TcENHANCEMENT MODEN-ChannelSWITCHING4.2m Ω @ 100A, 10V4V @ 250μA13800pF @ 50V100A Tc210nC @ 10V100V10V±20VTO-220AB100A0.0042Ohm400A100V1000 mJRoHS Compliant-------------------- -
Through HoleTO-220-3NOSILICON-55°C~175°C TJTubeOptiMOS™2008e3-Obsolete1 (Unlimited)3EAR99MATTE TINFET General Purpose PowerMOSFET (Metal Oxide)SINGLE260compliantNOT SPECIFIED3R-PSFM-T3Not Qualified1SINGLE WITH BUILT-IN DIODE300W TcENHANCEMENT MODEN-ChannelSWITCHING5.1m Ω @ 100A, 10V2.4V @ 250μA15600pF @ 50V100A Tc163nC @ 10V100V4.5V 10V±20VTO-220AB100A0.0051Ohm400A100V826 mJRoHS CompliantLOGIC LEVEL COMPATIBLE------------------
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Through HoleTO-220-3-SILICON-55°C~175°C TJTubeOptiMOS™2008e3yesActive1 (Unlimited)3EAR99Tin (Sn)-MOSFET (Metal Oxide)SINGLENOT SPECIFIED-NOT SPECIFIED3-Not Qualified1SINGLE WITH BUILT-IN DIODE71W TcENHANCEMENT MODEN-ChannelSWITCHING9.3m Ω @ 50A, 10V4V @ 34μA2900pF @ 30V50A Tc36nC @ 10V-10V±20VTO-220AB--200A--ROHS3 CompliantAVALANCHE RATED13 WeeksThrough Hole371W15 nsHalogen Free40ns5 ns20 ns50A20V60VNo SVHCLead Free----
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Through HoleTO-220-3-SILICON-55°C~175°C TJTubeOptiMOS™2013e3yesActive1 (Unlimited)3-Tin (Sn)-MOSFET (Metal Oxide)-NOT SPECIFIED-NOT SPECIFIED-R-PSFM-T3-1-125W TcENHANCEMENT MODEN-ChannelSWITCHING5.2m Ω @ 80A, 10V3.8V @ 66μA3770pF @ 40V80A Tc53nC @ 10V-6V 10V±20VTO-220AB-0.0052Ohm320A-84 mJROHS3 Compliant-13 WeeksThrough Hole--17 nsHalogen Free7ns7 ns27 ns80A20V80V-Contains Lead6.000006g1SingleDRAIN
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