Infineon Technologies IPL60R104C7AUMA1

Name: IPL60R104C7AUMA1
Brand: Infineon Technologies
SKU: 2488414-IPL60R104C7AUMA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPL60R104C7AUMA1

Manufacturer:: Infineon Technologies

Ventron No:: 2488414-IPL60R104C7AUMA1

Description:: MOSFET N-CH 600V 20A 4VSON

ECAD Model:

Datasheet:: IPL60R104C7AUMA1

Specifications

Infineon Technologies IPL60R104C7AUMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPL60R104C7AUMA1.

Factory Lead Time
18 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
4-PowerTSFN
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
CoolMOS™ C7
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
2A (4 Weeks)
Number of Terminations
4
Terminal Finish
Tin (Sn)
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
122W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
104m Ω @ 9.7A, 10V
Vgs(th) (Max) @ Id
4V @ 490μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
1819pF @ 400V
Current - Continuous Drain (Id) @ 25°C
20A Tc
Gate Charge (Qg) (Max) @ Vgs
42nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
20A
Max Dual Supply Voltage
600V
Pulsed Drain Current-Max (IDM)
83A
Avalanche Energy Rating (Eas)
97 mJ
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead

Description

IPL60R104C7AUMA1 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 97 mJ.A device's maximal input capacitance is 1819pF @ 400V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 20A, which represents the maximum continuous current it can conduct.In terms of pulsed drain current, it has a maximum of 83A, which is its maximum rated peak drain current.By using 600V, it can supply the maximum voltage from two sources.This device reduces its overall power consumption by using drive voltage (10V).

IPL60R104C7AUMA1 Features
the avalanche energy rating (Eas) is 97 mJ
a continuous drain current (ID) of 20A
based on its rated peak drain current 83A.

IPL60R104C7AUMA1 Applications
There are a lot of Infineon Technologies
IPL60R104C7AUMA1 applications of single MOSFETs transistors.

Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples

IPL60R104C7AUMA1 More Descriptions

Trans MOSFET N-CH 600V 20A 4-Pin VSON EP T/R
Mosfet, N-Ch, 600V, 20A, 150Deg C, 122W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V Rohs Compliant: Yes |Infineon IPL60R104C7AUMA1
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial

Product Comparison

The three parts on the right have similar specifications to IPL60R104C7AUMA1.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Max Dual Supply Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

RoHS Status

Lead Free

Weight

ECCN Code

JESD-30 Code

Number of Channels

Element Configuration

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Power Dissipation

View Compare
IPL60R104C7AUMA1

Infineon Technologies

18 Weeks

Surface Mount

Surface Mount

4-PowerTSFN

4

SILICON

-40°C~150°C TJ

Tape & Reel (TR)

CoolMOS™ C7

2008

e3

yes

Active

2A (4 Weeks)

4

Tin (Sn)

MOSFET (Metal Oxide)

SINGLE

NO LEAD

NOT SPECIFIED

not_compliant

NOT SPECIFIED

1

SINGLE WITH BUILT-IN DIODE

122W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

104m Ω @ 9.7A, 10V

4V @ 490μA

Halogen Free

1819pF @ 400V

20A Tc

42nC @ 10V

10V

±20V

20A

600V

83A

97 mJ

ROHS3 Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-
IPL60R1K5C6SATMA1

Infineon Technologies

18 Weeks

Surface Mount

Surface Mount

8-PowerTDFN

8

SILICON

-40°C~150°C TJ

Tape & Reel (TR)

CoolMOS™ C6

2008

-

yes

Active

1 (Unlimited)

5

-

MOSFET (Metal Oxide)

DUAL

NO LEAD

NOT SPECIFIED

not_compliant

NOT SPECIFIED

1

-

26.6W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

1.5 Ω @ 1.1A, 10V

3.5V @ 90μA

Halogen Free

200pF @ 100V

3A Tc

9.4nC @ 10V

10V

±20V

3A

600V

7.7A

26 mJ

ROHS3 Compliant

Contains Lead

75.891673mg

EAR99

R-PDSO-N5

1

Single

8 ns

7ns

20 ns

40 ns

30V

-

-

IPL60R104C7AUMA1 vs IPL60R1K5C6SATMA1
IPL65R190E6AUMA1

Infineon Technologies

12 Weeks

Surface Mount

Surface Mount

4-PowerTSFN

4

SILICON

-40°C~150°C TJ

Tape & Reel (TR)

CoolMOS™ E6

2013

-

-

Obsolete

2A (4 Weeks)

4

-

MOSFET (Metal Oxide)

-

NO LEAD

NOT SPECIFIED

-

NOT SPECIFIED

1

-

151W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

190m Ω @ 7.3A, 10V

3.5V @ 700μA

Halogen Free

1620pF @ 100V

20.2A Tc

73nC @ 10V

10V

±20V

20.2A

650V

66A

-

RoHS Compliant

Contains Lead

-

-

-

1

Single

12 ns

11ns

10 ns

112 ns

20V

650V

-

IPL60R104C7AUMA1 vs IPL65R190E6AUMA1
IPL65R460CFDAUMA1

Infineon Technologies

16 Weeks

Surface Mount

Surface Mount

4-PowerTSFN

4

-

-40°C~150°C TJ

Tape & Reel (TR)

CoolMOS™

2010

e3

-

Obsolete

2A (4 Weeks)

-

Tin (Sn)

MOSFET (Metal Oxide)

-

-

NOT SPECIFIED

-

NOT SPECIFIED

1

-

83.3W Tc

-

-

N-Channel

-

460m Ω @ 3.4A, 10V

4.5V @ 300μA

Halogen Free

870pF @ 100V

8.3A Tc

31.5nC @ 10V

10V

±20V

8.3A

650V

-

-

RoHS Compliant

Contains Lead

-

EAR99

-

2

-

10 ns

7ns

8 ns

38 ns

20V

-

83.3W

IPL60R104C7AUMA1 vs IPL65R460CFDAUMA1

Certification

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Part Number	Manufacturers	Description	Stock	Price
IPL60R104C7AUMA1 DISTI #33132396	Infineon Technologies AG	Trans MOSFET N-CH 600V 20A 4-Pin VSON EP T/R	3000	3000 $2.5888
IPL60R104C7AUMA1 DISTI #IPL60R104C7AUMA1-ND	Infineon Technologies AG	MOSFET N-CH 600V 20A 4VSON RoHS: Compliant	0	3000 $2.88643
IPL60R104C7AUMA1 DISTI #V36:1790_13984889	Infineon Technologies AG	Trans MOSFET N-CH 600V 20A 4-Pin VSON EP T/R	0	3000 $2.894 30000 $2.849 300000 $2.574 1500000 $2.41 3000000 $2.408
IPL60R104C7AUMA1 DISTI #IPL60R104C7AUMA1	Infineon Technologies AG	MOS Power Transistors HV (>= 200V) - Tape and R RoHS: Compliant	0	3000 $2.89 6000 $2.79 12000 $2.69 18000 $2.59 30000 $2.59
IPL60R104C7AUMA1 DISTI #SP001298008	Infineon Technologies AG	MOS Power Transistors HV (>= 200V) (Alt: SP0012 RoHS: Compliant	0	3000 $2.79 6000 $2.69 12000 $2.59 18000 $2.39 30000 $2.19
IPL60R104C7AUMA1 DISTI #IPL60R104C7	Infineon Technologies AG	MOS Power Transistors HV (>= 200V) (Alt: IPL60R RoHS: Compliant	0	3000 $2.95271 6000 $2.87069 9000 $2.79311 15000 $2.71961 30000 $2.68429 75000 $2.64987 150000 $2.61633
IPL60R104C7AUMA1 DISTI #84AC6833	Infineon Technologies AG	MOSFET, N-CH, 600V, 20A, 122W, VSON, Transistor P	3163	1 $5.52 10 $4.7 25 $4.49 50 $4.28 100 $4.07 250 $3.86 500 $3.46 1000 $2.92
IPL60R104C7AUMA1 DISTI #726-IPL60R104C7AUMA1	Infineon Technologies AG	MOSFET HIGH POWER_NEW RoHS: Compliant	0	1 $5.47 10 $4.65 100 $4.03 250 $3.82 500 $3.43 1000 $2.89 3000 $2.74
IPL60R104C7AUMA1 DISTI #2983363	Infineon Technologies AG	MOSFET, N-CH, 600V, 20A, 122W, VSON	3138	1 $5.56 10 $4.26 100 $3.7
IPL60R104C7AUMA1 DISTI #2983363	Infineon Technologies AG	MOSFET, N-CH, 600V, 20A, 122W, VSON RoHS: Compliant	3138	1 $4.57 25 $4.14

Infineon Technologies IPL60R104C7AUMA1

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