Infineon Technologies IPL60R360P6SATMA1
- Part Number:
- IPL60R360P6SATMA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2849334-IPL60R360P6SATMA1
- Description:
- MOSFET N-CH 600V 8THINPAK
- Datasheet:
- IPL60R360P6SATMA1
Infineon Technologies IPL60R360P6SATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPL60R360P6SATMA1.
- Factory Lead Time18 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerTDFN
- Number of Pins8
- Weight75.891673mg
- Transistor Element MaterialSILICON
- Operating Temperature-40°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesCoolMOS™ P6
- Published2008
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormNO LEAD
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PDSO-N5
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max89.3W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Turn On Delay Time12 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs360m Ω @ 4.5A, 10V
- Vgs(th) (Max) @ Id4.5V @ 370μA
- Halogen FreeHalogen Free
- Input Capacitance (Ciss) (Max) @ Vds1010pF @ 100V
- Current - Continuous Drain (Id) @ 25°C11.3A Tc
- Gate Charge (Qg) (Max) @ Vgs22nC @ 10V
- Rise Time7ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)7 ns
- Turn-Off Delay Time33 ns
- Continuous Drain Current (ID)11.3A
- Gate to Source Voltage (Vgs)30V
- Max Dual Supply Voltage600V
- Drain-source On Resistance-Max0.36Ohm
- Pulsed Drain Current-Max (IDM)30A
- Avalanche Energy Rating (Eas)247 mJ
- RoHS StatusROHS3 Compliant
- Lead FreeContains Lead
IPL60R360P6SATMA1 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 247 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1010pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 11.3A amps.It is [33 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 30A.A turn-on delay time of 12 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.As it is powered by 600V, it can support the maximum dual supply voltage.A device like this reduces its overall power consumption when it uses drive voltage (10V).
IPL60R360P6SATMA1 Features
the avalanche energy rating (Eas) is 247 mJ
a continuous drain current (ID) of 11.3A
the turn-off delay time is 33 ns
based on its rated peak drain current 30A.
IPL60R360P6SATMA1 Applications
There are a lot of Infineon Technologies
IPL60R360P6SATMA1 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 247 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1010pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 11.3A amps.It is [33 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 30A.A turn-on delay time of 12 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.As it is powered by 600V, it can support the maximum dual supply voltage.A device like this reduces its overall power consumption when it uses drive voltage (10V).
IPL60R360P6SATMA1 Features
the avalanche energy rating (Eas) is 247 mJ
a continuous drain current (ID) of 11.3A
the turn-off delay time is 33 ns
based on its rated peak drain current 30A.
IPL60R360P6SATMA1 Applications
There are a lot of Infineon Technologies
IPL60R360P6SATMA1 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
IPL60R360P6SATMA1 More Descriptions
Single N-Channel 600 V 360 mOhm 22 nC CoolMOS Power Mosfet - ThinPAK 5x6
Trans MOSFET N-CH 600V 11.3A 8-Pin Thin-PAK EP T/R / Very high commutation ruggedness
Mosfet, N-Ch, 600V, 11.3A, Smd-5; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:11.3A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IPL60R360P6SATMA1
MOSFET, N-CH, 600V, 11.3A, SMD-5; Transistor Polarity: N Channel; Continuous Drain Current Id: 11.3A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.32ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 89.3W; Transistor Case Style: SMD; No. of Pins: 5Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS P6 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The new CoolMOS ThinPAK 5x6 is a leadless SMD package especially designed for high voltage MOSFETs. This new package has a very small footprint of 5x6mm 2 and a very low profile with only 1mm height. | Summary of Features: Small footprint (5x6mm); Low profile (1mm); Low parasitic inductance; RoHS compliant; Halogen free mold compound | Benefits: Reduced board space consumption; Increased power density; Short commutation loop; Easy to use products; Environmentally friendly | Target Applications: Adapter; Consumer; Lighting
Trans MOSFET N-CH 600V 11.3A 8-Pin Thin-PAK EP T/R / Very high commutation ruggedness
Mosfet, N-Ch, 600V, 11.3A, Smd-5; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:11.3A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IPL60R360P6SATMA1
MOSFET, N-CH, 600V, 11.3A, SMD-5; Transistor Polarity: N Channel; Continuous Drain Current Id: 11.3A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.32ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 89.3W; Transistor Case Style: SMD; No. of Pins: 5Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS P6 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The new CoolMOS ThinPAK 5x6 is a leadless SMD package especially designed for high voltage MOSFETs. This new package has a very small footprint of 5x6mm 2 and a very low profile with only 1mm height. | Summary of Features: Small footprint (5x6mm); Low profile (1mm); Low parasitic inductance; RoHS compliant; Halogen free mold compound | Benefits: Reduced board space consumption; Increased power density; Short commutation loop; Easy to use products; Environmentally friendly | Target Applications: Adapter; Consumer; Lighting
The three parts on the right have similar specifications to IPL60R360P6SATMA1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModeCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdHalogen FreeInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Max Dual Supply VoltageDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)RoHS StatusLead FreeSurface MountJESD-609 CodePbfree CodeECCN CodeTerminal FinishReach Compliance CodeConfigurationDrain to Source Voltage (Vdss)DS Breakdown Voltage-MinDrain to Source Breakdown VoltagePower DissipationView Compare
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IPL60R360P6SATMA118 WeeksSurface MountSurface Mount8-PowerTDFN875.891673mgSILICON-40°C~150°C TJTape & Reel (TR)CoolMOS™ P62008Active1 (Unlimited)5MOSFET (Metal Oxide)DUALNO LEADNOT SPECIFIEDNOT SPECIFIEDR-PDSO-N51189.3W TcSingleENHANCEMENT MODEDRAIN12 nsN-ChannelSWITCHING360m Ω @ 4.5A, 10V4.5V @ 370μAHalogen Free1010pF @ 100V11.3A Tc22nC @ 10V7ns10V±20V7 ns33 ns11.3A30V600V0.36Ohm30A247 mJROHS3 CompliantContains Lead------------
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18 Weeks-Surface Mount4-PowerTSFN--SILICON-40°C~150°C TJTape & Reel (TR)CoolMOS™ P72014Active2A (4 Weeks)4MOSFET (Metal Oxide)SINGLENO LEADNOT SPECIFIEDNOT SPECIFIEDS-PSSO-N41-46W Tc-ENHANCEMENT MODEDRAIN-N-ChannelSWITCHING365m Ω @ 2.7A, 10V4V @ 140μA-555pF @ 400V10A Tc13nC @ 10V-10V±20V-----0.365Ohm26A27 mJROHS3 Compliant-YESe3yesEAR99Tin (Sn)not_compliantSINGLE WITH BUILT-IN DIODE600V600V--
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12 WeeksSurface MountSurface Mount4-PowerTSFN4-SILICON-40°C~150°C TJTape & Reel (TR)CoolMOS™ E62013Obsolete2A (4 Weeks)4MOSFET (Metal Oxide)-NO LEADNOT SPECIFIEDNOT SPECIFIED-11151W TcSingleENHANCEMENT MODEDRAIN12 nsN-ChannelSWITCHING190m Ω @ 7.3A, 10V3.5V @ 700μAHalogen Free1620pF @ 100V20.2A Tc73nC @ 10V11ns10V±20V10 ns112 ns20.2A20V650V-66A-RoHS CompliantContains Lead---------650V-
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16 WeeksSurface MountSurface Mount4-PowerTSFN4---40°C~150°C TJTape & Reel (TR)CoolMOS™2010Obsolete2A (4 Weeks)-MOSFET (Metal Oxide)--NOT SPECIFIEDNOT SPECIFIED-1283.3W Tc---10 nsN-Channel-460m Ω @ 3.4A, 10V4.5V @ 300μAHalogen Free870pF @ 100V8.3A Tc31.5nC @ 10V7ns10V±20V8 ns38 ns8.3A20V650V---RoHS CompliantContains Lead-e3-EAR99Tin (Sn)-----83.3W
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