Infineon Technologies IPL60R1K5C6SATMA1

IPL60R1K5C6SATMA1 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 26 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 200pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 3A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 40 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 7.7A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 8 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Powered by 600V, it supports the maximal dual supply voltage.By using drive voltage (10V), this device helps reduce its overall power consumption.

IPL60R1K5C6SATMA1 Features
the avalanche energy rating (Eas) is 26 mJ
a continuous drain current (ID) of 3A
the turn-off delay time is 40 ns
based on its rated peak drain current 7.7A.


IPL60R1K5C6SATMA1 Applications
There are a lot of Infineon Technologies
IPL60R1K5C6SATMA1 applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools