Infineon Technologies IPB80N06S207ATMA1
- Part Number:
- IPB80N06S207ATMA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2853988-IPB80N06S207ATMA1
- Description:
- MOSFET N-CH 55V 80A TO263-3
- ECAD Model:
-
- Datasheet:
- IPB80N06S207ATMA1
Infineon Technologies IPB80N06S207ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB80N06S207ATMA1.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesOptiMOS™
- Published2010
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max250W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs6.3m Ω @ 68A, 10V
- Vgs(th) (Max) @ Id4V @ 180μA
- Halogen FreeHalogen Free
- Input Capacitance (Ciss) (Max) @ Vds3400pF @ 25V
- Current - Continuous Drain (Id) @ 25°C80A Tc
- Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
- Rise Time37ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)36 ns
- Turn-Off Delay Time61 ns
- Continuous Drain Current (ID)80A
- Max Dual Supply Voltage55V
- RoHS StatusROHS3 Compliant
IPB80N06S207ATMA1 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 3400pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 80A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 61 ns.This device supports dual supply voltages maximally powered by 55V.Using drive voltage (10V) reduces this device's overall power consumption.
IPB80N06S207ATMA1 Features
a continuous drain current (ID) of 80A
the turn-off delay time is 61 ns
IPB80N06S207ATMA1 Applications
There are a lot of Infineon Technologies
IPB80N06S207ATMA1 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 3400pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 80A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 61 ns.This device supports dual supply voltages maximally powered by 55V.Using drive voltage (10V) reduces this device's overall power consumption.
IPB80N06S207ATMA1 Features
a continuous drain current (ID) of 80A
the turn-off delay time is 61 ns
IPB80N06S207ATMA1 Applications
There are a lot of Infineon Technologies
IPB80N06S207ATMA1 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
The three parts on the right have similar specifications to IPB80N06S207ATMA1.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeTechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdHalogen FreeInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Max Dual Supply VoltageRoHS StatusSurface MountTransistor Element MaterialJESD-609 CodeNumber of TerminationsTerminal FinishAdditional FeatureTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Reference StandardJESD-30 CodeNumber of ElementsConfigurationOperating ModeCase ConnectionDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Factory Lead TimePbfree CodeTurn On Delay TimeGate to Source Voltage (Vgs)Radiation HardeningView Compare
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IPB80N06S207ATMA1Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3-55°C~175°C TJTape & Reel (TR)OptiMOS™2010Discontinued1 (Unlimited)EAR99MOSFET (Metal Oxide)250W TcN-Channel6.3m Ω @ 68A, 10V4V @ 180μAHalogen Free3400pF @ 25V80A Tc110nC @ 10V37ns10V±20V36 ns61 ns80A55VROHS3 Compliant----------------------------- -
-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB--55°C~175°C TJTape & Reel (TR)OptiMOS™2006Obsolete1 (Unlimited)EAR99MOSFET (Metal Oxide)300W TcN-Channel4.8m Ω @ 80A, 10V4V @ 250μA-5110pF @ 25V80A Tc170nC @ 10V-10V±20V----RoHS CompliantYESSILICONe32Tin (Sn)ULTRA-LOW RESISTANCESINGLEGULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIEDAEC-Q101R-PSSO-G21SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAIN55V80A0.0048Ohm320A55V810 mJ-----
-
Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3-55°C~175°C TJTape & Reel (TR)OptiMOS™2006Active1 (Unlimited)EAR99MOSFET (Metal Oxide)300W TcN-Channel3.4m Ω @ 80A, 10V4V @ 250μAHalogen Free5300pF @ 25V80A Tc170nC @ 10V45ns10V±20V32 ns56 ns80A40VROHS3 Compliant-SILICONe32Tin (Sn)AVALANCHE RATEDSINGLEGULL WING----R-PSSO-G21SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAIN-----810 mJ10 Weeksyes26 ns20VNo
-
-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB--55°C~175°C TJTape & Reel (TR)OptiMOS™2010Discontinued1 (Unlimited)EAR99MOSFET (Metal Oxide)158W TcN-Channel10.7m Ω @ 60A, 10V2V @ 93μA-2075pF @ 25V80A Tc80nC @ 10V-4.5V 10V±20V----ROHS3 CompliantYESSILICON-2-LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCESINGLEGULL WING----R-PSSO-G21SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAIN55V80A0.0147Ohm320A55V280 mJ-----
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